The inlaid AI2O3 tunnel switch for ultrathin ferroelectric films

Quan Jiang; Hyun Ju Lee; Gun Hwan Kim; Cheol Seong Hwang

doi:10.1002/adma.200802924

The inlaid AI₂O₃ tunnel switch for ultrathin ferroelectric films

Quan Jiang, Hyun Ju Lee, Gun Hwan Kim, Cheol Seong Hwang

School of System & Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A study was conducted to investigate the formation of the invalid Al ₂O₃ tunnel switch for ultrathin ferroelectric (FE) films. It was demonstrated the specific interaction between ferroelectric PZT and interposed Al₂O₃ layers resulted in significant improvement in the ferroelectric performance of ultrathin polycrystalline PZT films. It was found that the new functionality of the thin dielectric layer was an ideal tunnel switch for ultrathin FE films. The dielectric layer opened up during FE switching, minimizing the adverse interference with the switching interaction. The thinner PZT film also showed better FE performance than the thicker film after all the adverse effects had been blocked by the interposed Al₂O₃ layer. The intact properties of the Al ₂O₃ layer were maintained after repeated cycling up to 10⁷ times.

Original language	English
Pages (from-to)	2870-2875
Number of pages	6
Journal	Advanced Materials
Volume	21
Issue number	28
DOIs	https://doi.org/10.1002/adma.200802924
Publication status	Published - 2009 Jul 27

All Science Journal Classification (ASJC) codes

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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title = "The inlaid AI2O3 tunnel switch for ultrathin ferroelectric films",

abstract = "A study was conducted to investigate the formation of the invalid Al 2O3 tunnel switch for ultrathin ferroelectric (FE) films. It was demonstrated the specific interaction between ferroelectric PZT and interposed Al2O3 layers resulted in significant improvement in the ferroelectric performance of ultrathin polycrystalline PZT films. It was found that the new functionality of the thin dielectric layer was an ideal tunnel switch for ultrathin FE films. The dielectric layer opened up during FE switching, minimizing the adverse interference with the switching interaction. The thinner PZT film also showed better FE performance than the thicker film after all the adverse effects had been blocked by the interposed Al2O3 layer. The intact properties of the Al 2O3 layer were maintained after repeated cycling up to 107 times.",

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AB - A study was conducted to investigate the formation of the invalid Al 2O3 tunnel switch for ultrathin ferroelectric (FE) films. It was demonstrated the specific interaction between ferroelectric PZT and interposed Al2O3 layers resulted in significant improvement in the ferroelectric performance of ultrathin polycrystalline PZT films. It was found that the new functionality of the thin dielectric layer was an ideal tunnel switch for ultrathin FE films. The dielectric layer opened up during FE switching, minimizing the adverse interference with the switching interaction. The thinner PZT film also showed better FE performance than the thicker film after all the adverse effects had been blocked by the interposed Al2O3 layer. The intact properties of the Al 2O3 layer were maintained after repeated cycling up to 107 times.

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The inlaid AI₂O₃ tunnel switch for ultrathin ferroelectric films

Abstract

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