The interactions between Si/Co films and GaAs(001) substrates

J. S. Kwak, Hong Koo Baik, D. W. Shin, C. G. Park, C. S. Kim, S. K. Noh, S. I. Kim

Research output: Contribution to journalArticle

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Abstract

Interfacial reactions of Si/Co films on (001) oriented GaAs substrate, in the temperature range 300-700°C for 30 min, have been investigated using a combination of x-ray diffraction, Auger electron spectroscopy, and transmission electron microscopy. Cobalt starts to react with GaAs and Si at 380°C by formation of Co2GaAs, and Co2Si phases, respectively. At 420°C, the entire layer of Co is consumed, and the layer structure is observed with the sequence Si/CoSi/CoGa(CoAs)/Co2GaAs/GaAs. Contacts produced in this annealing regime are rectifying and the Schottky barrier heights increase from 0.69 eV(as-deposited state) up to 0.81 eV (420°C). In the subsequent reaction, CoSi grows at the expense of the decompositions of CoGa and CoAs at 460°C. In addition, the ternary phase also is decomposed and only the CoSi phase remains upon the GaAs surface at 600°C. Contacts produced at higher temperature regime (>460°C) have low barriers. The interface between CoSi and GaAs is stable up to 700°C. The results of interfacial reactions can be understood from the calculated Si-Co-Ga-As quaternary phase diagram.

Original languageEnglish
Pages (from-to)1335-1341
Number of pages7
JournalJournal of Electronic Materials
Volume23
Issue number12
DOIs
Publication statusPublished - 1994 Dec 1

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Surface chemistry
Substrates
Auger electron spectroscopy
Phase diagrams
Cobalt
Diffraction
interactions
Annealing
Transmission electron microscopy
Decomposition
X rays
Temperature
Auger spectroscopy
electron spectroscopy
x ray diffraction
cobalt
phase diagrams
decomposition
transmission electron microscopy
annealing

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Kwak, J. S., Baik, H. K., Shin, D. W., Park, C. G., Kim, C. S., Noh, S. K., & Kim, S. I. (1994). The interactions between Si/Co films and GaAs(001) substrates. Journal of Electronic Materials, 23(12), 1335-1341. https://doi.org/10.1007/BF02649899
Kwak, J. S. ; Baik, Hong Koo ; Shin, D. W. ; Park, C. G. ; Kim, C. S. ; Noh, S. K. ; Kim, S. I. / The interactions between Si/Co films and GaAs(001) substrates. In: Journal of Electronic Materials. 1994 ; Vol. 23, No. 12. pp. 1335-1341.
@article{a5658786931348f58974b3ad5285ef12,
title = "The interactions between Si/Co films and GaAs(001) substrates",
abstract = "Interfacial reactions of Si/Co films on (001) oriented GaAs substrate, in the temperature range 300-700°C for 30 min, have been investigated using a combination of x-ray diffraction, Auger electron spectroscopy, and transmission electron microscopy. Cobalt starts to react with GaAs and Si at 380°C by formation of Co2GaAs, and Co2Si phases, respectively. At 420°C, the entire layer of Co is consumed, and the layer structure is observed with the sequence Si/CoSi/CoGa(CoAs)/Co2GaAs/GaAs. Contacts produced in this annealing regime are rectifying and the Schottky barrier heights increase from 0.69 eV(as-deposited state) up to 0.81 eV (420°C). In the subsequent reaction, CoSi grows at the expense of the decompositions of CoGa and CoAs at 460°C. In addition, the ternary phase also is decomposed and only the CoSi phase remains upon the GaAs surface at 600°C. Contacts produced at higher temperature regime (>460°C) have low barriers. The interface between CoSi and GaAs is stable up to 700°C. The results of interfacial reactions can be understood from the calculated Si-Co-Ga-As quaternary phase diagram.",
author = "Kwak, {J. S.} and Baik, {Hong Koo} and Shin, {D. W.} and Park, {C. G.} and Kim, {C. S.} and Noh, {S. K.} and Kim, {S. I.}",
year = "1994",
month = "12",
day = "1",
doi = "10.1007/BF02649899",
language = "English",
volume = "23",
pages = "1335--1341",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "12",

}

Kwak, JS, Baik, HK, Shin, DW, Park, CG, Kim, CS, Noh, SK & Kim, SI 1994, 'The interactions between Si/Co films and GaAs(001) substrates', Journal of Electronic Materials, vol. 23, no. 12, pp. 1335-1341. https://doi.org/10.1007/BF02649899

The interactions between Si/Co films and GaAs(001) substrates. / Kwak, J. S.; Baik, Hong Koo; Shin, D. W.; Park, C. G.; Kim, C. S.; Noh, S. K.; Kim, S. I.

In: Journal of Electronic Materials, Vol. 23, No. 12, 01.12.1994, p. 1335-1341.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The interactions between Si/Co films and GaAs(001) substrates

AU - Kwak, J. S.

AU - Baik, Hong Koo

AU - Shin, D. W.

AU - Park, C. G.

AU - Kim, C. S.

AU - Noh, S. K.

AU - Kim, S. I.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - Interfacial reactions of Si/Co films on (001) oriented GaAs substrate, in the temperature range 300-700°C for 30 min, have been investigated using a combination of x-ray diffraction, Auger electron spectroscopy, and transmission electron microscopy. Cobalt starts to react with GaAs and Si at 380°C by formation of Co2GaAs, and Co2Si phases, respectively. At 420°C, the entire layer of Co is consumed, and the layer structure is observed with the sequence Si/CoSi/CoGa(CoAs)/Co2GaAs/GaAs. Contacts produced in this annealing regime are rectifying and the Schottky barrier heights increase from 0.69 eV(as-deposited state) up to 0.81 eV (420°C). In the subsequent reaction, CoSi grows at the expense of the decompositions of CoGa and CoAs at 460°C. In addition, the ternary phase also is decomposed and only the CoSi phase remains upon the GaAs surface at 600°C. Contacts produced at higher temperature regime (>460°C) have low barriers. The interface between CoSi and GaAs is stable up to 700°C. The results of interfacial reactions can be understood from the calculated Si-Co-Ga-As quaternary phase diagram.

AB - Interfacial reactions of Si/Co films on (001) oriented GaAs substrate, in the temperature range 300-700°C for 30 min, have been investigated using a combination of x-ray diffraction, Auger electron spectroscopy, and transmission electron microscopy. Cobalt starts to react with GaAs and Si at 380°C by formation of Co2GaAs, and Co2Si phases, respectively. At 420°C, the entire layer of Co is consumed, and the layer structure is observed with the sequence Si/CoSi/CoGa(CoAs)/Co2GaAs/GaAs. Contacts produced in this annealing regime are rectifying and the Schottky barrier heights increase from 0.69 eV(as-deposited state) up to 0.81 eV (420°C). In the subsequent reaction, CoSi grows at the expense of the decompositions of CoGa and CoAs at 460°C. In addition, the ternary phase also is decomposed and only the CoSi phase remains upon the GaAs surface at 600°C. Contacts produced at higher temperature regime (>460°C) have low barriers. The interface between CoSi and GaAs is stable up to 700°C. The results of interfacial reactions can be understood from the calculated Si-Co-Ga-As quaternary phase diagram.

UR - http://www.scopus.com/inward/record.url?scp=0028681880&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028681880&partnerID=8YFLogxK

U2 - 10.1007/BF02649899

DO - 10.1007/BF02649899

M3 - Article

AN - SCOPUS:0028681880

VL - 23

SP - 1335

EP - 1341

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 12

ER -