The interfacial electronic structure of fullerene/ultra thin dielectrics of SiO2 and SiON

S. W. Cho, Y. Yi, K. B. Chung, S. J. Kang, M. H. Cho

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

The electronic structures at the interface region between fullerene and dielectric layers were investigated by in situ ultraviolet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS). The highest occupied molecular orbital (HOMO) onset of the fullerene layer saturates at 1.3 eV below the Fermi level of the SiO2 layer, which was based on the measurement of the sample with a 12.8 nm thick fullerene layer. On the other hand, the HOMO onset was measured at 2.0 eV below the SiON layer Fermi level. The magnitude of the interface dipole and band bending at the interface was determined, and the complete energy level diagrams for fullerene on SiO 2 and SiON were evaluated.

Original languageEnglish
Pages (from-to)136-140
Number of pages5
JournalChemical Physics Letters
Volume499
Issue number1-3
DOIs
Publication statusPublished - 2010 Oct 20

Bibliographical note

Funding Information:
This work was supported by Korea Research Council of Fundamental Science and Technology (KRCF) through the KRISS project of ‘Development of Advanced Industrial Metrology’, a research project of the Korea Research Foundation (Grant No. 2009-0070876 ), and New and Renewable Energy R&D program (Grant No. 2009T100100614 ) under the Ministry of Knowledge Economy, Republic of Korea .

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

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