The interfacial layer effect on bi-stable resistive switching phenomenon in MnOx thin film

Min Kyu Yang; Gun Hwan Kim; Hyunsu Ju; Jeon Kook Lee; Han Cheol Ryu

doi:10.1063/1.4928249

The interfacial layer effect on bi-stable resistive switching phenomenon in MnO_x thin film

Min Kyu Yang, Gun Hwan Kim, Hyunsu Ju, Jeon Kook Lee, Han Cheol Ryu

School of System & Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Resistive switching behavior of MnO_x thin films was comparatively investigated. Two different top electrode materials of Ti and Pt over the common MnO_x/Pt structure showed significantly distinct electrical endurance characteristics. Various structural and electrical analyses revealed that the interfacial oxide layer associated with Ti in the Ti/MnO_x/Pt structure affected the improved electrical endurance characteristic. Finally, an 8 × 8 crossbar array with 100 nm-width interconnection line was fabricated to confirm the scalability and the stability of the resistive switching performances in the Ti/MnO_x/Pt structure.

Original language	English
Article number	053503
Journal	Applied Physics Letters
Volume	107
Issue number	5
DOIs	https://doi.org/10.1063/1.4928249
Publication status	Published - 2015 Aug 3

Bibliographical note

Funding Information:
This work was supported by Department of Energy grant DE-FC-03–87ER60615. G.L.H. was supported by a Ruth L Kirschstein National Research Service Award GM007185.

Publisher Copyright:
© 2015 AIP Publishing LLC.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4928249

Cite this

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title = "The interfacial layer effect on bi-stable resistive switching phenomenon in MnOx thin film",

abstract = "Resistive switching behavior of MnOx thin films was comparatively investigated. Two different top electrode materials of Ti and Pt over the common MnOx/Pt structure showed significantly distinct electrical endurance characteristics. Various structural and electrical analyses revealed that the interfacial oxide layer associated with Ti in the Ti/MnOx/Pt structure affected the improved electrical endurance characteristic. Finally, an 8 × 8 crossbar array with 100 nm-width interconnection line was fabricated to confirm the scalability and the stability of the resistive switching performances in the Ti/MnOx/Pt structure.",

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note = "Funding Information: This work was supported by Department of Energy grant DE-FC-03–87ER60615. G.L.H. was supported by a Ruth L Kirschstein National Research Service Award GM007185. Publisher Copyright: {\textcopyright} 2015 AIP Publishing LLC.",

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AU - Yang, Min Kyu

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AU - Ryu, Han Cheol

N1 - Funding Information: This work was supported by Department of Energy grant DE-FC-03–87ER60615. G.L.H. was supported by a Ruth L Kirschstein National Research Service Award GM007185. Publisher Copyright: © 2015 AIP Publishing LLC.

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N2 - Resistive switching behavior of MnOx thin films was comparatively investigated. Two different top electrode materials of Ti and Pt over the common MnOx/Pt structure showed significantly distinct electrical endurance characteristics. Various structural and electrical analyses revealed that the interfacial oxide layer associated with Ti in the Ti/MnOx/Pt structure affected the improved electrical endurance characteristic. Finally, an 8 × 8 crossbar array with 100 nm-width interconnection line was fabricated to confirm the scalability and the stability of the resistive switching performances in the Ti/MnOx/Pt structure.

AB - Resistive switching behavior of MnOx thin films was comparatively investigated. Two different top electrode materials of Ti and Pt over the common MnOx/Pt structure showed significantly distinct electrical endurance characteristics. Various structural and electrical analyses revealed that the interfacial oxide layer associated with Ti in the Ti/MnOx/Pt structure affected the improved electrical endurance characteristic. Finally, an 8 × 8 crossbar array with 100 nm-width interconnection line was fabricated to confirm the scalability and the stability of the resistive switching performances in the Ti/MnOx/Pt structure.

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