The investigation of Pb-sufficient buffer layer on the ferroelectric properties in Pt/PZT/Pt structure

Jun Kyu Yang, Woo Sik Kim, Hyung-Ho Park

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this study, we prepared lead zirconate titanate (PZT) thin film with buffer layer by sol-gel method to investigate the role of interface composition on the ferroelectric behavior of PZT thin film. About 50-nm-thick PZT buffer layer containing various amount of excess Pb was served as an interfacial layer. After drying the buffer layer, about 200 nm thick PZT film containing 15% excess Pb was over-deposited. According to the increase of excess Pb content for the interfacial PZT layer, an integral PZT film showed an improvement of crystalline quality and negligible polarization fatigue behavior even after repeated 109 cycles in Pt/PZT/Pt structure. Therefore, we could believe that compositional and crystalline state of PZT buffer layer contacting Pt substrate has an important role on the entire film properties.

Original languageEnglish
Pages (from-to)267-272
Number of pages6
JournalFerroelectrics
Volume260
Issue number1
DOIs
Publication statusPublished - 2001 Jan 1

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Buffer layers
Ferroelectric materials
buffers
Crystalline materials
Thin films
Sol-gel process
Drying
Fatigue of materials
Polarization
thin films
drying
lead titanate zirconate
Substrates
Chemical analysis
gels
cycles
polarization

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

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abstract = "In this study, we prepared lead zirconate titanate (PZT) thin film with buffer layer by sol-gel method to investigate the role of interface composition on the ferroelectric behavior of PZT thin film. About 50-nm-thick PZT buffer layer containing various amount of excess Pb was served as an interfacial layer. After drying the buffer layer, about 200 nm thick PZT film containing 15{\%} excess Pb was over-deposited. According to the increase of excess Pb content for the interfacial PZT layer, an integral PZT film showed an improvement of crystalline quality and negligible polarization fatigue behavior even after repeated 109 cycles in Pt/PZT/Pt structure. Therefore, we could believe that compositional and crystalline state of PZT buffer layer contacting Pt substrate has an important role on the entire film properties.",
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The investigation of Pb-sufficient buffer layer on the ferroelectric properties in Pt/PZT/Pt structure. / Yang, Jun Kyu; Kim, Woo Sik; Park, Hyung-Ho.

In: Ferroelectrics, Vol. 260, No. 1, 01.01.2001, p. 267-272.

Research output: Contribution to journalArticle

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