The investigation on the structural distribution of passivated GaAs (100) surface after (NH4)2Sx treatment

Seung Hoon Sa, Min Gu Kang, Hyung Ho Park, Kyung Soo Suh

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The qualitative and quantitative structural distribution of HCl- and/or (NH4)2Sx-treated GaAs surface was investigated by angle-resolved X-ray photoelectron spectroscopy. Carbon contamination and elemental As layers were observed in HCl-treated GaAs surface. The (NH4)2SX treatment following HCl led to the elemental As replacing the As-S bond. Compared with HCl treatment, the more rugged oscillation of photoelectron intensity of Ga and As was observed according to take-off angle in (NH4)2Sx-treated GaAs due to the periodic arrangement of S-passivation layer. The quantitative depth distribution of surface constituents was derived by processing the experimental angular profile and comparing with a simplified layer model. Our results indicate that the distributing order of surface layer on GaAs substrate is a C layer of 5.81 ± 0.54 Å and elemental As layer of 4.57 ± 0.40 Å with HCl treatment, and a C layer of 5.71 ± 0.52 Å and S-passivation layer (As-S) of 4.73 ± 0.40 Å with (NH4)2Sx treatment from the surface. Through the analysis of low-energy electron diffraction, the elemental As after HCl treatment was revealed to be randomly distributed and the passivated GaAs surface showed (2 × 1)-reconstructed structure at room temperature with regular distribution of As-S bonds.

Original languageEnglish
Pages (from-to)234-237
Number of pages4
JournalSurface and Coatings Technology
Issue number1-3
Publication statusPublished - 1998 Mar

Bibliographical note

Funding Information:
This research was performed under the auspices of the Electronic and Telecommunications Research Institute (ETRI) in Korea (Contract No. 92206).

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


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