The investigation on the structural distribution of passivated GaAs (100) surface after (NH4)2Sx treatment

Seung Hoon Sa, Min Gu Kang, Hyung-Ho Park, Kyung Soo Suh

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The qualitative and quantitative structural distribution of HCl- and/or (NH4)2Sx-treated GaAs surface was investigated by angle-resolved X-ray photoelectron spectroscopy. Carbon contamination and elemental As layers were observed in HCl-treated GaAs surface. The (NH4)2SX treatment following HCl led to the elemental As replacing the As-S bond. Compared with HCl treatment, the more rugged oscillation of photoelectron intensity of Ga and As was observed according to take-off angle in (NH4)2Sx-treated GaAs due to the periodic arrangement of S-passivation layer. The quantitative depth distribution of surface constituents was derived by processing the experimental angular profile and comparing with a simplified layer model. Our results indicate that the distributing order of surface layer on GaAs substrate is a C layer of 5.81 ± 0.54 Å and elemental As layer of 4.57 ± 0.40 Å with HCl treatment, and a C layer of 5.71 ± 0.52 Å and S-passivation layer (As-S) of 4.73 ± 0.40 Å with (NH4)2Sx treatment from the surface. Through the analysis of low-energy electron diffraction, the elemental As after HCl treatment was revealed to be randomly distributed and the passivated GaAs surface showed (2 × 1)-reconstructed structure at room temperature with regular distribution of As-S bonds.

Original languageEnglish
Pages (from-to)234-237
Number of pages4
JournalSurface and Coatings Technology
Volume100-101
Issue number1-3
DOIs
Publication statusPublished - 1998 Jan 1

Fingerprint

Passivation
passivity
Low energy electron diffraction
Takeoff
Photoelectrons
gallium arsenide
takeoff
Contamination
Carbon
distributing
X ray photoelectron spectroscopy
surface layers
contamination
photoelectrons
Substrates
electron diffraction
Processing
photoelectron spectroscopy
oscillations
carbon

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

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title = "The investigation on the structural distribution of passivated GaAs (100) surface after (NH4)2Sx treatment",
abstract = "The qualitative and quantitative structural distribution of HCl- and/or (NH4)2Sx-treated GaAs surface was investigated by angle-resolved X-ray photoelectron spectroscopy. Carbon contamination and elemental As layers were observed in HCl-treated GaAs surface. The (NH4)2SX treatment following HCl led to the elemental As replacing the As-S bond. Compared with HCl treatment, the more rugged oscillation of photoelectron intensity of Ga and As was observed according to take-off angle in (NH4)2Sx-treated GaAs due to the periodic arrangement of S-passivation layer. The quantitative depth distribution of surface constituents was derived by processing the experimental angular profile and comparing with a simplified layer model. Our results indicate that the distributing order of surface layer on GaAs substrate is a C layer of 5.81 ± 0.54 {\AA} and elemental As layer of 4.57 ± 0.40 {\AA} with HCl treatment, and a C layer of 5.71 ± 0.52 {\AA} and S-passivation layer (As-S) of 4.73 ± 0.40 {\AA} with (NH4)2Sx treatment from the surface. Through the analysis of low-energy electron diffraction, the elemental As after HCl treatment was revealed to be randomly distributed and the passivated GaAs surface showed (2 × 1)-reconstructed structure at room temperature with regular distribution of As-S bonds.",
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The investigation on the structural distribution of passivated GaAs (100) surface after (NH4)2Sx treatment. / Sa, Seung Hoon; Kang, Min Gu; Park, Hyung-Ho; Suh, Kyung Soo.

In: Surface and Coatings Technology, Vol. 100-101, No. 1-3, 01.01.1998, p. 234-237.

Research output: Contribution to journalArticle

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AB - The qualitative and quantitative structural distribution of HCl- and/or (NH4)2Sx-treated GaAs surface was investigated by angle-resolved X-ray photoelectron spectroscopy. Carbon contamination and elemental As layers were observed in HCl-treated GaAs surface. The (NH4)2SX treatment following HCl led to the elemental As replacing the As-S bond. Compared with HCl treatment, the more rugged oscillation of photoelectron intensity of Ga and As was observed according to take-off angle in (NH4)2Sx-treated GaAs due to the periodic arrangement of S-passivation layer. The quantitative depth distribution of surface constituents was derived by processing the experimental angular profile and comparing with a simplified layer model. Our results indicate that the distributing order of surface layer on GaAs substrate is a C layer of 5.81 ± 0.54 Å and elemental As layer of 4.57 ± 0.40 Å with HCl treatment, and a C layer of 5.71 ± 0.52 Å and S-passivation layer (As-S) of 4.73 ± 0.40 Å with (NH4)2Sx treatment from the surface. Through the analysis of low-energy electron diffraction, the elemental As after HCl treatment was revealed to be randomly distributed and the passivated GaAs surface showed (2 × 1)-reconstructed structure at room temperature with regular distribution of As-S bonds.

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