The light response characteristics of oxide-based thin film transistors

Soo Yeon Lee, Seung Min Song, Moon Kyu Song, Woo Geun Lee, Kap Soo Yoon, Jang-Yeon Kwon, Min Koo Han

Research output: Contribution to journalArticle

Abstract

We fabricated the inverted-staggered etch stopper structure oxide-based TFT and investigated the characteristics of oxide TFT under the 400 nm wavelength light illumination. When 400 nm light was illuminated, the threshold voltage (V th) decreased and subthreshold slope (SS) increased at forward sweep, while V th and SS were not altered when larger wavelength lights, such as 650 nm, 550 nm and 450 nm, were illuminated. At reverse sweep, the transfer curve barely changed even under 400 nm light. Our experimental results support that photo-induced hole carriers are captured by donor-like interface trap and it caused the decrease of V th and increase of SS. We investigated the interface trap density increases proportionally to the photo-induced hole concentration at active layer.

Original languageEnglish
Pages (from-to)774-777
Number of pages4
JournalWorld Academy of Science, Engineering and Technology
Volume76
Publication statusPublished - 2011 Apr 1

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Thin film transistors
Oxides
Hole concentration
Wavelength
Threshold voltage
Lighting

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Lee, S. Y., Song, S. M., Song, M. K., Lee, W. G., Yoon, K. S., Kwon, J-Y., & Han, M. K. (2011). The light response characteristics of oxide-based thin film transistors. World Academy of Science, Engineering and Technology, 76, 774-777.
Lee, Soo Yeon ; Song, Seung Min ; Song, Moon Kyu ; Lee, Woo Geun ; Yoon, Kap Soo ; Kwon, Jang-Yeon ; Han, Min Koo. / The light response characteristics of oxide-based thin film transistors. In: World Academy of Science, Engineering and Technology. 2011 ; Vol. 76. pp. 774-777.
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abstract = "We fabricated the inverted-staggered etch stopper structure oxide-based TFT and investigated the characteristics of oxide TFT under the 400 nm wavelength light illumination. When 400 nm light was illuminated, the threshold voltage (V th) decreased and subthreshold slope (SS) increased at forward sweep, while V th and SS were not altered when larger wavelength lights, such as 650 nm, 550 nm and 450 nm, were illuminated. At reverse sweep, the transfer curve barely changed even under 400 nm light. Our experimental results support that photo-induced hole carriers are captured by donor-like interface trap and it caused the decrease of V th and increase of SS. We investigated the interface trap density increases proportionally to the photo-induced hole concentration at active layer.",
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Lee, SY, Song, SM, Song, MK, Lee, WG, Yoon, KS, Kwon, J-Y & Han, MK 2011, 'The light response characteristics of oxide-based thin film transistors', World Academy of Science, Engineering and Technology, vol. 76, pp. 774-777.

The light response characteristics of oxide-based thin film transistors. / Lee, Soo Yeon; Song, Seung Min; Song, Moon Kyu; Lee, Woo Geun; Yoon, Kap Soo; Kwon, Jang-Yeon; Han, Min Koo.

In: World Academy of Science, Engineering and Technology, Vol. 76, 01.04.2011, p. 774-777.

Research output: Contribution to journalArticle

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