SiC films have been grown by a chemical vapor infiltration and deposition method. Different microstructures, so-called 'whisker-type' SiC films, have been fabricated, and the deposition and infiltration conditions of whisker growth have been studied. By connecting the SiC/C particles of the green body, fractural strength has been increased and, subsequently, the open pore structure of the body has been modified by an infiltrated whiskering process without a canning effect. Without using a metallic catalyst, silicon carbide whiskers have been obtained at an input gas ratio (H2/MTS) above 20, and at temperatures below 1200 °C. The microstructure and composition of the whiskered SiC have been investigated by means of SEM and XPS.
Bibliographical noteFunding Information:
This research was supported by a grant from the Center for Advanced Materials Processing (CAMP) of the 21st Century Frontier R&D Program funded by the Ministry of Science and Technology, Republic of Korea.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry