The microstructural effect of chemically vapor infiltrated SiC whiskered thin film on the green body of SiC/C composites

Young Jin Lee; Sang Min Hwang; Doo Jin Choi; Sang Hwan Park; Hae Doo Kim

doi:10.1016/S0040-6090(02)00832-5

The microstructural effect of chemically vapor infiltrated SiC whiskered thin film on the green body of SiC/C composites

Young Jin Lee, Sang Min Hwang, Doo Jin Choi, Sang Hwan Park, Hae Doo Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article

6 Citations (Scopus)

Abstract

SiC films have been grown by a chemical vapor infiltration and deposition method. Different microstructures, so-called 'whisker-type' SiC films, have been fabricated, and the deposition and infiltration conditions of whisker growth have been studied. By connecting the SiC/C particles of the green body, fractural strength has been increased and, subsequently, the open pore structure of the body has been modified by an infiltrated whiskering process without a canning effect. Without using a metallic catalyst, silicon carbide whiskers have been obtained at an input gas ratio (H₂/MTS) above 20, and at temperatures below 1200 °C. The microstructure and composition of the whiskered SiC have been investigated by means of SEM and XPS.

Original language	English
Pages (from-to)	354-359
Number of pages	6
Journal	Thin Solid Films
Volume	420-421
DOIs	https://doi.org/10.1016/S0040-6090(02)00832-5
Publication status	Published - 2002 Dec 2

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/S0040-6090(02)00832-5

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Lee, Y. J., Hwang, S. M., Choi, D. J., Park, S. H., & Kim, H. D. (2002). The microstructural effect of chemically vapor infiltrated SiC whiskered thin film on the green body of SiC/C composites. Thin Solid Films, 420-421, 354-359. https://doi.org/10.1016/S0040-6090(02)00832-5

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title = "The microstructural effect of chemically vapor infiltrated SiC whiskered thin film on the green body of SiC/C composites",

abstract = "SiC films have been grown by a chemical vapor infiltration and deposition method. Different microstructures, so-called 'whisker-type' SiC films, have been fabricated, and the deposition and infiltration conditions of whisker growth have been studied. By connecting the SiC/C particles of the green body, fractural strength has been increased and, subsequently, the open pore structure of the body has been modified by an infiltrated whiskering process without a canning effect. Without using a metallic catalyst, silicon carbide whiskers have been obtained at an input gas ratio (H2/MTS) above 20, and at temperatures below 1200 °C. The microstructure and composition of the whiskered SiC have been investigated by means of SEM and XPS.",

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AU - Kim, Hae Doo

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