Abstract
SiC films have been grown by a chemical vapor infiltration and deposition method. Different microstructures, so-called 'whisker-type' SiC films, have been fabricated, and the deposition and infiltration conditions of whisker growth have been studied. By connecting the SiC/C particles of the green body, fractural strength has been increased and, subsequently, the open pore structure of the body has been modified by an infiltrated whiskering process without a canning effect. Without using a metallic catalyst, silicon carbide whiskers have been obtained at an input gas ratio (H2/MTS) above 20, and at temperatures below 1200 °C. The microstructure and composition of the whiskered SiC have been investigated by means of SEM and XPS.
| Original language | English |
|---|---|
| Pages (from-to) | 354-359 |
| Number of pages | 6 |
| Journal | Thin Solid Films |
| Volume | 420-421 |
| DOIs | |
| Publication status | Published - 2002 Dec 2 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
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The microstructural effect of chemically vapor infiltrated SiC whiskered thin film on the green body of SiC/C composites. / Lee, Young Jin; Hwang, Sang Min; Choi, Doo Jin; Park, Sang Hwan; Kim, Hae Doo.
In: Thin Solid Films, Vol. 420-421, 02.12.2002, p. 354-359.Research output: Contribution to journal › Article
TY - JOUR
T1 - The microstructural effect of chemically vapor infiltrated SiC whiskered thin film on the green body of SiC/C composites
AU - Lee, Young Jin
AU - Hwang, Sang Min
AU - Choi, Doo Jin
AU - Park, Sang Hwan
AU - Kim, Hae Doo
PY - 2002/12/2
Y1 - 2002/12/2
N2 - SiC films have been grown by a chemical vapor infiltration and deposition method. Different microstructures, so-called 'whisker-type' SiC films, have been fabricated, and the deposition and infiltration conditions of whisker growth have been studied. By connecting the SiC/C particles of the green body, fractural strength has been increased and, subsequently, the open pore structure of the body has been modified by an infiltrated whiskering process without a canning effect. Without using a metallic catalyst, silicon carbide whiskers have been obtained at an input gas ratio (H2/MTS) above 20, and at temperatures below 1200 °C. The microstructure and composition of the whiskered SiC have been investigated by means of SEM and XPS.
AB - SiC films have been grown by a chemical vapor infiltration and deposition method. Different microstructures, so-called 'whisker-type' SiC films, have been fabricated, and the deposition and infiltration conditions of whisker growth have been studied. By connecting the SiC/C particles of the green body, fractural strength has been increased and, subsequently, the open pore structure of the body has been modified by an infiltrated whiskering process without a canning effect. Without using a metallic catalyst, silicon carbide whiskers have been obtained at an input gas ratio (H2/MTS) above 20, and at temperatures below 1200 °C. The microstructure and composition of the whiskered SiC have been investigated by means of SEM and XPS.
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U2 - 10.1016/S0040-6090(02)00832-5
DO - 10.1016/S0040-6090(02)00832-5
M3 - Article
VL - 420-421
SP - 354
EP - 359
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
ER -