The microstructure and chemical state of W-Si-N layers formed in W/WN x/poly-Si systems during postannealing

S. K. Kang; B. G. Min; D. H. Ko; H. B. Kang; C. W. Yang; K. Y. Lim

doi:10.1149/1.1683650

The microstructure and chemical state of W-Si-N layers formed in W/WN _x/poly-Si systems during postannealing

S. K. Kang, B. G. Min, D. H. Ko, H. B. Kang, C. W. Yang, K. Y. Lim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The microstructure and the chemical binding state of the interfacial layer in W/WN_x/poly Si was investigated by using highresolution transmission electron microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS). After a short period of annealing, the Si-N layer and island-type precipitation formed between WN_x and poly Si as a result of the thermodynamic instability of WN_x films at 900°C. HR-TEM imaging and XPS analysis indicated that the island-type precipitation is composed of W, Si, and N. With increasing annealing time, the Si-N layer became thinner and the island-type precipitation became a continuous layer having an amorphous phase about 3 nm thick. However, above a critical annealing time, the interfacial layer thickness remained constant due to the formation of a stable W-Si-N layer.

Original language	English
Pages (from-to)	G319-G322
Journal	Journal of the Electrochemical Society
Volume	151
Issue number	5
DOIs	https://doi.org/10.1149/1.1683650
Publication status	Published - 2004

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1149/1.1683650

Cite this

@article{c5d48ffd20f547d39295cfde43b3b0ca,

title = "The microstructure and chemical state of W-Si-N layers formed in W/WN x/poly-Si systems during postannealing",

abstract = "The microstructure and the chemical binding state of the interfacial layer in W/WNx/poly Si was investigated by using highresolution transmission electron microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS). After a short period of annealing, the Si-N layer and island-type precipitation formed between WNx and poly Si as a result of the thermodynamic instability of WNx films at 900°C. HR-TEM imaging and XPS analysis indicated that the island-type precipitation is composed of W, Si, and N. With increasing annealing time, the Si-N layer became thinner and the island-type precipitation became a continuous layer having an amorphous phase about 3 nm thick. However, above a critical annealing time, the interfacial layer thickness remained constant due to the formation of a stable W-Si-N layer.",

author = "Kang, {S. K.} and Min, {B. G.} and Ko, {D. H.} and Kang, {H. B.} and Yang, {C. W.} and Lim, {K. Y.}",

year = "2004",

doi = "10.1149/1.1683650",

language = "English",

volume = "151",

pages = "G319--G322",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

number = "5",

}

TY - JOUR

T1 - The microstructure and chemical state of W-Si-N layers formed in W/WN x/poly-Si systems during postannealing

AU - Kang, S. K.

AU - Min, B. G.

AU - Ko, D. H.

AU - Kang, H. B.

AU - Yang, C. W.

AU - Lim, K. Y.

PY - 2004

Y1 - 2004

N2 - The microstructure and the chemical binding state of the interfacial layer in W/WNx/poly Si was investigated by using highresolution transmission electron microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS). After a short period of annealing, the Si-N layer and island-type precipitation formed between WNx and poly Si as a result of the thermodynamic instability of WNx films at 900°C. HR-TEM imaging and XPS analysis indicated that the island-type precipitation is composed of W, Si, and N. With increasing annealing time, the Si-N layer became thinner and the island-type precipitation became a continuous layer having an amorphous phase about 3 nm thick. However, above a critical annealing time, the interfacial layer thickness remained constant due to the formation of a stable W-Si-N layer.

AB - The microstructure and the chemical binding state of the interfacial layer in W/WNx/poly Si was investigated by using highresolution transmission electron microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS). After a short period of annealing, the Si-N layer and island-type precipitation formed between WNx and poly Si as a result of the thermodynamic instability of WNx films at 900°C. HR-TEM imaging and XPS analysis indicated that the island-type precipitation is composed of W, Si, and N. With increasing annealing time, the Si-N layer became thinner and the island-type precipitation became a continuous layer having an amorphous phase about 3 nm thick. However, above a critical annealing time, the interfacial layer thickness remained constant due to the formation of a stable W-Si-N layer.

UR - http://www.scopus.com/inward/record.url?scp=2942588575&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2942588575&partnerID=8YFLogxK

U2 - 10.1149/1.1683650

DO - 10.1149/1.1683650

M3 - Article

AN - SCOPUS:2942588575

VL - 151

SP - G319-G322

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 5

ER -