The microstructure and chemical state of W-Si-N layers formed in W/WN x/poly-Si systems during postannealing

S. K. Kang; B. G. Min; D. H. Ko; H. B. Kang; C. W. Yang; K. Y. Lim

doi:10.1149/1.1683650

The microstructure and chemical state of W-Si-N layers formed in W/WN _x/poly-Si systems during postannealing

S. K. Kang, B. G. Min, D. H. Ko, H. B. Kang, C. W. Yang, K. Y. Lim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article

Abstract

The microstructure and the chemical binding state of the interfacial layer in W/WN_x/poly Si was investigated by using highresolution transmission electron microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS). After a short period of annealing, the Si-N layer and island-type precipitation formed between WN_x and poly Si as a result of the thermodynamic instability of WN_x films at 900°C. HR-TEM imaging and XPS analysis indicated that the island-type precipitation is composed of W, Si, and N. With increasing annealing time, the Si-N layer became thinner and the island-type precipitation became a continuous layer having an amorphous phase about 3 nm thick. However, above a critical annealing time, the interfacial layer thickness remained constant due to the formation of a stable W-Si-N layer.

Original language	English
Pages (from-to)	G319-G322
Journal	Journal of the Electrochemical Society
Volume	151
Issue number	5
DOIs	https://doi.org/10.1149/1.1683650
Publication status	Published - 2004 Jun 18

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

Cite this

Kang, S. K., Min, B. G., Ko, D. H., Kang, H. B., Yang, C. W., & Lim, K. Y. (2004). The microstructure and chemical state of W-Si-N layers formed in W/WN _x/poly-Si systems during postannealing. Journal of the Electrochemical Society, 151(5), G319-G322. https://doi.org/10.1149/1.1683650

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abstract = "The microstructure and the chemical binding state of the interfacial layer in W/WNx/poly Si was investigated by using highresolution transmission electron microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS). After a short period of annealing, the Si-N layer and island-type precipitation formed between WNx and poly Si as a result of the thermodynamic instability of WNx films at 900°C. HR-TEM imaging and XPS analysis indicated that the island-type precipitation is composed of W, Si, and N. With increasing annealing time, the Si-N layer became thinner and the island-type precipitation became a continuous layer having an amorphous phase about 3 nm thick. However, above a critical annealing time, the interfacial layer thickness remained constant due to the formation of a stable W-Si-N layer.",

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T1 - The microstructure and chemical state of W-Si-N layers formed in W/WN x/poly-Si systems during postannealing

AU - Kang, S. K.

AU - Min, B. G.

AU - Ko, D. H.

AU - Kang, H. B.

AU - Yang, C. W.

AU - Lim, K. Y.

PY - 2004/6/18

Y1 - 2004/6/18

N2 - The microstructure and the chemical binding state of the interfacial layer in W/WNx/poly Si was investigated by using highresolution transmission electron microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS). After a short period of annealing, the Si-N layer and island-type precipitation formed between WNx and poly Si as a result of the thermodynamic instability of WNx films at 900°C. HR-TEM imaging and XPS analysis indicated that the island-type precipitation is composed of W, Si, and N. With increasing annealing time, the Si-N layer became thinner and the island-type precipitation became a continuous layer having an amorphous phase about 3 nm thick. However, above a critical annealing time, the interfacial layer thickness remained constant due to the formation of a stable W-Si-N layer.

AB - The microstructure and the chemical binding state of the interfacial layer in W/WNx/poly Si was investigated by using highresolution transmission electron microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS). After a short period of annealing, the Si-N layer and island-type precipitation formed between WNx and poly Si as a result of the thermodynamic instability of WNx films at 900°C. HR-TEM imaging and XPS analysis indicated that the island-type precipitation is composed of W, Si, and N. With increasing annealing time, the Si-N layer became thinner and the island-type precipitation became a continuous layer having an amorphous phase about 3 nm thick. However, above a critical annealing time, the interfacial layer thickness remained constant due to the formation of a stable W-Si-N layer.

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10.1149/1.1683650