The microstructure and chemical state of W-Si-N layers formed in W/WN x/poly-Si systems during postannealing

S. K. Kang, B. G. Min, D. H. Ko, H. B. Kang, C. W. Yang, K. Y. Lim

Research output: Contribution to journalArticle

Abstract

The microstructure and the chemical binding state of the interfacial layer in W/WNx/poly Si was investigated by using highresolution transmission electron microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS). After a short period of annealing, the Si-N layer and island-type precipitation formed between WNx and poly Si as a result of the thermodynamic instability of WNx films at 900°C. HR-TEM imaging and XPS analysis indicated that the island-type precipitation is composed of W, Si, and N. With increasing annealing time, the Si-N layer became thinner and the island-type precipitation became a continuous layer having an amorphous phase about 3 nm thick. However, above a critical annealing time, the interfacial layer thickness remained constant due to the formation of a stable W-Si-N layer.

Original languageEnglish
Pages (from-to)G319-G322
JournalJournal of the Electrochemical Society
Volume151
Issue number5
DOIs
Publication statusPublished - 2004 Jun 18

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Polysilicon
Annealing
Microstructure
X ray photoelectron spectroscopy
Transmission electron microscopy
Thermodynamics
Imaging techniques

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

Kang, S. K. ; Min, B. G. ; Ko, D. H. ; Kang, H. B. ; Yang, C. W. ; Lim, K. Y. / The microstructure and chemical state of W-Si-N layers formed in W/WN x/poly-Si systems during postannealing. In: Journal of the Electrochemical Society. 2004 ; Vol. 151, No. 5. pp. G319-G322.
@article{c5d48ffd20f547d39295cfde43b3b0ca,
title = "The microstructure and chemical state of W-Si-N layers formed in W/WN x/poly-Si systems during postannealing",
abstract = "The microstructure and the chemical binding state of the interfacial layer in W/WNx/poly Si was investigated by using highresolution transmission electron microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS). After a short period of annealing, the Si-N layer and island-type precipitation formed between WNx and poly Si as a result of the thermodynamic instability of WNx films at 900°C. HR-TEM imaging and XPS analysis indicated that the island-type precipitation is composed of W, Si, and N. With increasing annealing time, the Si-N layer became thinner and the island-type precipitation became a continuous layer having an amorphous phase about 3 nm thick. However, above a critical annealing time, the interfacial layer thickness remained constant due to the formation of a stable W-Si-N layer.",
author = "Kang, {S. K.} and Min, {B. G.} and Ko, {D. H.} and Kang, {H. B.} and Yang, {C. W.} and Lim, {K. Y.}",
year = "2004",
month = "6",
day = "18",
doi = "10.1149/1.1683650",
language = "English",
volume = "151",
pages = "G319--G322",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "5",

}

The microstructure and chemical state of W-Si-N layers formed in W/WN x/poly-Si systems during postannealing. / Kang, S. K.; Min, B. G.; Ko, D. H.; Kang, H. B.; Yang, C. W.; Lim, K. Y.

In: Journal of the Electrochemical Society, Vol. 151, No. 5, 18.06.2004, p. G319-G322.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The microstructure and chemical state of W-Si-N layers formed in W/WN x/poly-Si systems during postannealing

AU - Kang, S. K.

AU - Min, B. G.

AU - Ko, D. H.

AU - Kang, H. B.

AU - Yang, C. W.

AU - Lim, K. Y.

PY - 2004/6/18

Y1 - 2004/6/18

N2 - The microstructure and the chemical binding state of the interfacial layer in W/WNx/poly Si was investigated by using highresolution transmission electron microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS). After a short period of annealing, the Si-N layer and island-type precipitation formed between WNx and poly Si as a result of the thermodynamic instability of WNx films at 900°C. HR-TEM imaging and XPS analysis indicated that the island-type precipitation is composed of W, Si, and N. With increasing annealing time, the Si-N layer became thinner and the island-type precipitation became a continuous layer having an amorphous phase about 3 nm thick. However, above a critical annealing time, the interfacial layer thickness remained constant due to the formation of a stable W-Si-N layer.

AB - The microstructure and the chemical binding state of the interfacial layer in W/WNx/poly Si was investigated by using highresolution transmission electron microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS). After a short period of annealing, the Si-N layer and island-type precipitation formed between WNx and poly Si as a result of the thermodynamic instability of WNx films at 900°C. HR-TEM imaging and XPS analysis indicated that the island-type precipitation is composed of W, Si, and N. With increasing annealing time, the Si-N layer became thinner and the island-type precipitation became a continuous layer having an amorphous phase about 3 nm thick. However, above a critical annealing time, the interfacial layer thickness remained constant due to the formation of a stable W-Si-N layer.

UR - http://www.scopus.com/inward/record.url?scp=2942588575&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2942588575&partnerID=8YFLogxK

U2 - 10.1149/1.1683650

DO - 10.1149/1.1683650

M3 - Article

AN - SCOPUS:2942588575

VL - 151

SP - G319-G322

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 5

ER -