Abstract
The microstructure and the chemical binding state of the interfacial layer in W/WNx/poly Si was investigated by using highresolution transmission electron microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS). After a short period of annealing, the Si-N layer and island-type precipitation formed between WNx and poly Si as a result of the thermodynamic instability of WNx films at 900°C. HR-TEM imaging and XPS analysis indicated that the island-type precipitation is composed of W, Si, and N. With increasing annealing time, the Si-N layer became thinner and the island-type precipitation became a continuous layer having an amorphous phase about 3 nm thick. However, above a critical annealing time, the interfacial layer thickness remained constant due to the formation of a stable W-Si-N layer.
| Original language | English |
|---|---|
| Pages (from-to) | G319-G322 |
| Journal | Journal of the Electrochemical Society |
| Volume | 151 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2004 Jun 18 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry
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The microstructure and chemical state of W-Si-N layers formed in W/WN x/poly-Si systems during postannealing. / Kang, S. K.; Min, B. G.; Ko, D. H.; Kang, H. B.; Yang, C. W.; Lim, K. Y.
In: Journal of the Electrochemical Society, Vol. 151, No. 5, 18.06.2004, p. G319-G322.Research output: Contribution to journal › Article
TY - JOUR
T1 - The microstructure and chemical state of W-Si-N layers formed in W/WN x/poly-Si systems during postannealing
AU - Kang, S. K.
AU - Min, B. G.
AU - Ko, D. H.
AU - Kang, H. B.
AU - Yang, C. W.
AU - Lim, K. Y.
PY - 2004/6/18
Y1 - 2004/6/18
N2 - The microstructure and the chemical binding state of the interfacial layer in W/WNx/poly Si was investigated by using highresolution transmission electron microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS). After a short period of annealing, the Si-N layer and island-type precipitation formed between WNx and poly Si as a result of the thermodynamic instability of WNx films at 900°C. HR-TEM imaging and XPS analysis indicated that the island-type precipitation is composed of W, Si, and N. With increasing annealing time, the Si-N layer became thinner and the island-type precipitation became a continuous layer having an amorphous phase about 3 nm thick. However, above a critical annealing time, the interfacial layer thickness remained constant due to the formation of a stable W-Si-N layer.
AB - The microstructure and the chemical binding state of the interfacial layer in W/WNx/poly Si was investigated by using highresolution transmission electron microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS). After a short period of annealing, the Si-N layer and island-type precipitation formed between WNx and poly Si as a result of the thermodynamic instability of WNx films at 900°C. HR-TEM imaging and XPS analysis indicated that the island-type precipitation is composed of W, Si, and N. With increasing annealing time, the Si-N layer became thinner and the island-type precipitation became a continuous layer having an amorphous phase about 3 nm thick. However, above a critical annealing time, the interfacial layer thickness remained constant due to the formation of a stable W-Si-N layer.
UR - http://www.scopus.com/inward/record.url?scp=2942588575&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=2942588575&partnerID=8YFLogxK
U2 - 10.1149/1.1683650
DO - 10.1149/1.1683650
M3 - Article
AN - SCOPUS:2942588575
VL - 151
SP - G319-G322
JO - Journal of the Electrochemical Society
JF - Journal of the Electrochemical Society
SN - 0013-4651
IS - 5
ER -