The microstructure and chemical state of W-Si-N layers formed in W/WN x/poly-Si systems during postannealing

S. K. Kang; B. G. Min; D. H. Ko; H. B. Kang; C. W. Yang; K. Y. Lim

doi:10.1149/1.1683650

The microstructure and chemical state of W-Si-N layers formed in W/WN _x/poly-Si systems during postannealing

S. K. Kang, B. G. Min, D. H. Ko, H. B. Kang, C. W. Yang, K. Y. Lim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article

Abstract

The microstructure and the chemical binding state of the interfacial layer in W/WN_x/poly Si was investigated by using highresolution transmission electron microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS). After a short period of annealing, the Si-N layer and island-type precipitation formed between WN_x and poly Si as a result of the thermodynamic instability of WN_x films at 900°C. HR-TEM imaging and XPS analysis indicated that the island-type precipitation is composed of W, Si, and N. With increasing annealing time, the Si-N layer became thinner and the island-type precipitation became a continuous layer having an amorphous phase about 3 nm thick. However, above a critical annealing time, the interfacial layer thickness remained constant due to the formation of a stable W-Si-N layer.

Original language	English
Pages (from-to)	G319-G322
Journal	Journal of the Electrochemical Society
Volume	151
Issue number	5
DOIs	https://doi.org/10.1149/1.1683650
Publication status	Published - 2004 Jun 18

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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Kang, S. K., Min, B. G., Ko, D. H., Kang, H. B., Yang, C. W., & Lim, K. Y. (2004). The microstructure and chemical state of W-Si-N layers formed in W/WN _x/poly-Si systems during postannealing. Journal of the Electrochemical Society, 151(5), G319-G322. https://doi.org/10.1149/1.1683650

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title = "The microstructure and chemical state of W-Si-N layers formed in W/WN x/poly-Si systems during postannealing",

abstract = "The microstructure and the chemical binding state of the interfacial layer in W/WNx/poly Si was investigated by using highresolution transmission electron microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS). After a short period of annealing, the Si-N layer and island-type precipitation formed between WNx and poly Si as a result of the thermodynamic instability of WNx films at 900°C. HR-TEM imaging and XPS analysis indicated that the island-type precipitation is composed of W, Si, and N. With increasing annealing time, the Si-N layer became thinner and the island-type precipitation became a continuous layer having an amorphous phase about 3 nm thick. However, above a critical annealing time, the interfacial layer thickness remained constant due to the formation of a stable W-Si-N layer.",

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T1 - The microstructure and chemical state of W-Si-N layers formed in W/WN x/poly-Si systems during postannealing

AU - Kang, S. K.

AU - Min, B. G.

AU - Ko, D. H.

AU - Kang, H. B.

AU - Yang, C. W.

AU - Lim, K. Y.

PY - 2004/6/18

Y1 - 2004/6/18

N2 - The microstructure and the chemical binding state of the interfacial layer in W/WNx/poly Si was investigated by using highresolution transmission electron microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS). After a short period of annealing, the Si-N layer and island-type precipitation formed between WNx and poly Si as a result of the thermodynamic instability of WNx films at 900°C. HR-TEM imaging and XPS analysis indicated that the island-type precipitation is composed of W, Si, and N. With increasing annealing time, the Si-N layer became thinner and the island-type precipitation became a continuous layer having an amorphous phase about 3 nm thick. However, above a critical annealing time, the interfacial layer thickness remained constant due to the formation of a stable W-Si-N layer.

AB - The microstructure and the chemical binding state of the interfacial layer in W/WNx/poly Si was investigated by using highresolution transmission electron microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS). After a short period of annealing, the Si-N layer and island-type precipitation formed between WNx and poly Si as a result of the thermodynamic instability of WNx films at 900°C. HR-TEM imaging and XPS analysis indicated that the island-type precipitation is composed of W, Si, and N. With increasing annealing time, the Si-N layer became thinner and the island-type precipitation became a continuous layer having an amorphous phase about 3 nm thick. However, above a critical annealing time, the interfacial layer thickness remained constant due to the formation of a stable W-Si-N layer.

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