The microstructure and chemical state of W-Si-N layers formed in W/WN x/poly-Si systems during postannealing

S. K. Kang, B. G. Min, D. H. Ko, H. B. Kang, C. W. Yang, K. Y. Lim

Research output: Contribution to journalArticle

Abstract

The microstructure and the chemical binding state of the interfacial layer in W/WNx/poly Si was investigated by using highresolution transmission electron microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS). After a short period of annealing, the Si-N layer and island-type precipitation formed between WNx and poly Si as a result of the thermodynamic instability of WNx films at 900°C. HR-TEM imaging and XPS analysis indicated that the island-type precipitation is composed of W, Si, and N. With increasing annealing time, the Si-N layer became thinner and the island-type precipitation became a continuous layer having an amorphous phase about 3 nm thick. However, above a critical annealing time, the interfacial layer thickness remained constant due to the formation of a stable W-Si-N layer.

Original languageEnglish
Pages (from-to)G319-G322
JournalJournal of the Electrochemical Society
Volume151
Issue number5
DOIs
Publication statusPublished - 2004 Jun 18

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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