The microstructure and the chemical binding state of the interfacial layer in W/WNx/poly Si was investigated by using highresolution transmission electron microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS). After a short period of annealing, the Si-N layer and island-type precipitation formed between WNx and poly Si as a result of the thermodynamic instability of WNx films at 900°C. HR-TEM imaging and XPS analysis indicated that the island-type precipitation is composed of W, Si, and N. With increasing annealing time, the Si-N layer became thinner and the island-type precipitation became a continuous layer having an amorphous phase about 3 nm thick. However, above a critical annealing time, the interfacial layer thickness remained constant due to the formation of a stable W-Si-N layer.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry