The NH 3 nitridation effects on a Al 2O 3 passivation by atomic layer deposition (ALD) in the HfO 2/GaAs systems

Young Dae Cho, Dong Chan Suh, Dae Hong Ko, Yongshik Lee, Mann Ho Cho

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigated the nitridation effects on a passivating Al 2O 3 layer formed by atomic layer deposition (ALD) process at the interface of HfO 2/GaAs. Results reveal that formation of Ga-O is suppressed greatly when annealed under NH 3 ambient for the HfD 2/GaAs system. Moreover if the Al 2O 3 layer is thick enough, diffusion of Ga into the high-k dielectric is blocked effectively, even after heat treatment at 500°C Results of chemical analyses by x-ray photoelectron spectroscopy (XPS) and micro-structure analyses by high-resolution transmission electron microscopy (HR-TEM) are presented.

Original languageEnglish
Title of host publicationPhysics and Technology of High-k Materials 9
Pages145-148
Number of pages4
Edition3
DOIs
Publication statusPublished - 2011 Dec 1
Event9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting - Boston, MA, United States
Duration: 2011 Oct 102011 Oct 12

Publication series

NameECS Transactions
Number3
Volume41
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting
CountryUnited States
CityBoston, MA
Period11/10/1011/10/12

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • Cite this

    Cho, Y. D., Suh, D. C., Ko, D. H., Lee, Y., & Cho, M. H. (2011). The NH 3 nitridation effects on a Al 2O 3 passivation by atomic layer deposition (ALD) in the HfO 2/GaAs systems. In Physics and Technology of High-k Materials 9 (3 ed., pp. 145-148). (ECS Transactions; Vol. 41, No. 3). https://doi.org/10.1149/1.3633030