The NH 3 nitridation effects on a Al 2O 3 passivation by atomic layer deposition (ALD) in the HfO 2/GaAs systems

Young Dae Cho, Dong Chan Suh, Dae Hong Ko, Yongshik Lee, Mann Ho Cho

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigated the nitridation effects on a passivating Al 2O 3 layer formed by atomic layer deposition (ALD) process at the interface of HfO 2/GaAs. Results reveal that formation of Ga-O is suppressed greatly when annealed under NH 3 ambient for the HfD 2/GaAs system. Moreover if the Al 2O 3 layer is thick enough, diffusion of Ga into the high-k dielectric is blocked effectively, even after heat treatment at 500°C Results of chemical analyses by x-ray photoelectron spectroscopy (XPS) and micro-structure analyses by high-resolution transmission electron microscopy (HR-TEM) are presented.

Original languageEnglish
Title of host publicationPhysics and Technology of High-k Materials 9
Pages145-148
Number of pages4
Edition3
DOIs
Publication statusPublished - 2011 Dec 1
Event9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting - Boston, MA, United States
Duration: 2011 Oct 102011 Oct 12

Publication series

NameECS Transactions
Number3
Volume41
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting
CountryUnited States
CityBoston, MA
Period11/10/1011/10/12

Fingerprint

Nitridation
Atomic layer deposition
Photoelectron spectroscopy
High resolution transmission electron microscopy
Passivation
Heat treatment
X rays
Microstructure
High-k dielectric

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Cho, Y. D., Suh, D. C., Ko, D. H., Lee, Y., & Cho, M. H. (2011). The NH 3 nitridation effects on a Al 2O 3 passivation by atomic layer deposition (ALD) in the HfO 2/GaAs systems. In Physics and Technology of High-k Materials 9 (3 ed., pp. 145-148). (ECS Transactions; Vol. 41, No. 3). https://doi.org/10.1149/1.3633030
Cho, Young Dae ; Suh, Dong Chan ; Ko, Dae Hong ; Lee, Yongshik ; Cho, Mann Ho. / The NH 3 nitridation effects on a Al 2O 3 passivation by atomic layer deposition (ALD) in the HfO 2/GaAs systems. Physics and Technology of High-k Materials 9. 3. ed. 2011. pp. 145-148 (ECS Transactions; 3).
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abstract = "We investigated the nitridation effects on a passivating Al 2O 3 layer formed by atomic layer deposition (ALD) process at the interface of HfO 2/GaAs. Results reveal that formation of Ga-O is suppressed greatly when annealed under NH 3 ambient for the HfD 2/GaAs system. Moreover if the Al 2O 3 layer is thick enough, diffusion of Ga into the high-k dielectric is blocked effectively, even after heat treatment at 500°C Results of chemical analyses by x-ray photoelectron spectroscopy (XPS) and micro-structure analyses by high-resolution transmission electron microscopy (HR-TEM) are presented.",
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Cho, YD, Suh, DC, Ko, DH, Lee, Y & Cho, MH 2011, The NH 3 nitridation effects on a Al 2O 3 passivation by atomic layer deposition (ALD) in the HfO 2/GaAs systems. in Physics and Technology of High-k Materials 9. 3 edn, ECS Transactions, no. 3, vol. 41, pp. 145-148, 9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting, Boston, MA, United States, 11/10/10. https://doi.org/10.1149/1.3633030

The NH 3 nitridation effects on a Al 2O 3 passivation by atomic layer deposition (ALD) in the HfO 2/GaAs systems. / Cho, Young Dae; Suh, Dong Chan; Ko, Dae Hong; Lee, Yongshik; Cho, Mann Ho.

Physics and Technology of High-k Materials 9. 3. ed. 2011. p. 145-148 (ECS Transactions; Vol. 41, No. 3).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Cho YD, Suh DC, Ko DH, Lee Y, Cho MH. The NH 3 nitridation effects on a Al 2O 3 passivation by atomic layer deposition (ALD) in the HfO 2/GaAs systems. In Physics and Technology of High-k Materials 9. 3 ed. 2011. p. 145-148. (ECS Transactions; 3). https://doi.org/10.1149/1.3633030