The optoelectronic properties of PbS nanowire field-effect transistors

Seunghyun Lee, Jin Seo Noh, Jeongmin Kim, Min Gin Kim, So Young Jang, Jeunghee Park, Wooyoung Lee

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We report on the optoelectronic properties of individual PbS nanowires prepared by gas-phase substitution reaction of pregrown CdS nanowires. The PbS nanowires synthesized by this method were found to be single crystals with high quality. A combination of electron-beam lithography and a lift-off process was utilized to fabricate individual 62-nm-thick PbS nanowire field-effect transistors (FETs). The nanowire FETs showed pronounced photoconductivity under light illumination while they were highly resistive in the dark environment. The conductivity increased by more than 40 folds in the presence of light. Our results are the first demonstration of the highly efficient photoresponse of individual single-crystalline PbS nanowires and provide insights into future works on nanostructured PbS optoelectronics.

Original languageEnglish
Article number6589194
Pages (from-to)1135-1138
Number of pages4
JournalIEEE Transactions on Nanotechnology
Volume12
Issue number6
DOIs
Publication statusPublished - 2013 Nov 28

Fingerprint

Field effect transistors
Optoelectronic devices
Nanowires
Electron beam lithography
Photoconductivity
Substitution reactions
Demonstrations
Lighting
Single crystals
Crystalline materials
Gases

All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Electrical and Electronic Engineering

Cite this

Lee, Seunghyun ; Noh, Jin Seo ; Kim, Jeongmin ; Kim, Min Gin ; Jang, So Young ; Park, Jeunghee ; Lee, Wooyoung. / The optoelectronic properties of PbS nanowire field-effect transistors. In: IEEE Transactions on Nanotechnology. 2013 ; Vol. 12, No. 6. pp. 1135-1138.
@article{7038234074004662a346dd0673709b46,
title = "The optoelectronic properties of PbS nanowire field-effect transistors",
abstract = "We report on the optoelectronic properties of individual PbS nanowires prepared by gas-phase substitution reaction of pregrown CdS nanowires. The PbS nanowires synthesized by this method were found to be single crystals with high quality. A combination of electron-beam lithography and a lift-off process was utilized to fabricate individual 62-nm-thick PbS nanowire field-effect transistors (FETs). The nanowire FETs showed pronounced photoconductivity under light illumination while they were highly resistive in the dark environment. The conductivity increased by more than 40 folds in the presence of light. Our results are the first demonstration of the highly efficient photoresponse of individual single-crystalline PbS nanowires and provide insights into future works on nanostructured PbS optoelectronics.",
author = "Seunghyun Lee and Noh, {Jin Seo} and Jeongmin Kim and Kim, {Min Gin} and Jang, {So Young} and Jeunghee Park and Wooyoung Lee",
year = "2013",
month = "11",
day = "28",
doi = "10.1109/TNANO.2013.2280911",
language = "English",
volume = "12",
pages = "1135--1138",
journal = "IEEE Transactions on Nanotechnology",
issn = "1536-125X",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",

}

Lee, S, Noh, JS, Kim, J, Kim, MG, Jang, SY, Park, J & Lee, W 2013, 'The optoelectronic properties of PbS nanowire field-effect transistors', IEEE Transactions on Nanotechnology, vol. 12, no. 6, 6589194, pp. 1135-1138. https://doi.org/10.1109/TNANO.2013.2280911

The optoelectronic properties of PbS nanowire field-effect transistors. / Lee, Seunghyun; Noh, Jin Seo; Kim, Jeongmin; Kim, Min Gin; Jang, So Young; Park, Jeunghee; Lee, Wooyoung.

In: IEEE Transactions on Nanotechnology, Vol. 12, No. 6, 6589194, 28.11.2013, p. 1135-1138.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The optoelectronic properties of PbS nanowire field-effect transistors

AU - Lee, Seunghyun

AU - Noh, Jin Seo

AU - Kim, Jeongmin

AU - Kim, Min Gin

AU - Jang, So Young

AU - Park, Jeunghee

AU - Lee, Wooyoung

PY - 2013/11/28

Y1 - 2013/11/28

N2 - We report on the optoelectronic properties of individual PbS nanowires prepared by gas-phase substitution reaction of pregrown CdS nanowires. The PbS nanowires synthesized by this method were found to be single crystals with high quality. A combination of electron-beam lithography and a lift-off process was utilized to fabricate individual 62-nm-thick PbS nanowire field-effect transistors (FETs). The nanowire FETs showed pronounced photoconductivity under light illumination while they were highly resistive in the dark environment. The conductivity increased by more than 40 folds in the presence of light. Our results are the first demonstration of the highly efficient photoresponse of individual single-crystalline PbS nanowires and provide insights into future works on nanostructured PbS optoelectronics.

AB - We report on the optoelectronic properties of individual PbS nanowires prepared by gas-phase substitution reaction of pregrown CdS nanowires. The PbS nanowires synthesized by this method were found to be single crystals with high quality. A combination of electron-beam lithography and a lift-off process was utilized to fabricate individual 62-nm-thick PbS nanowire field-effect transistors (FETs). The nanowire FETs showed pronounced photoconductivity under light illumination while they were highly resistive in the dark environment. The conductivity increased by more than 40 folds in the presence of light. Our results are the first demonstration of the highly efficient photoresponse of individual single-crystalline PbS nanowires and provide insights into future works on nanostructured PbS optoelectronics.

UR - http://www.scopus.com/inward/record.url?scp=84888163146&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84888163146&partnerID=8YFLogxK

U2 - 10.1109/TNANO.2013.2280911

DO - 10.1109/TNANO.2013.2280911

M3 - Article

VL - 12

SP - 1135

EP - 1138

JO - IEEE Transactions on Nanotechnology

JF - IEEE Transactions on Nanotechnology

SN - 1536-125X

IS - 6

M1 - 6589194

ER -