The electronic structures of pentacene/MoO3/Al and pentacene/Al were studied using in situ photoemission spectroscopy. The secondary electron cutoffs, highest occupied molecular orbitals (HOMOs) and core level changes were measured upon deposition of the pentacene and MoO3 to study the electronic structures at the interface. We obtained complete energy level diagrams for each interface, showing that the insertion of the MoO3 layer between pentacene and Al induces the HOMO level shift of pentacene toward lower binding energies compared to that without MoO3. This results in reduction of the hole injection barrier, which is responsible for the improvements in electronic device performance.
Bibliographical noteFunding Information:
This work was supported by Korea Research Council of Fundamental Science and Technology (KRCF) through the KRISS project of “Development of Advanced Industrial Metrology” and a research project of the Korea Research Foundation (KRF, Grant No. 2009-0070876 ) and BK21 project of the KRF.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys
- Materials Chemistry