The origin of hole injection improvements with MoO3/Al bilayer electrodes in pentacene thin-film transistors

Pyungeun Jeon; Kyul Han; Hyunbok Lee; Hyun Sung Kim; Kwangho Jeong; Kwanghee Cho; Sang Wan Cho; Yeonjin Yi

doi:10.1016/j.synthmet.2009.08.041

The origin of hole injection improvements with MoO₃/Al bilayer electrodes in pentacene thin-film transistors

Pyungeun Jeon, Kyul Han, Hyunbok Lee, Hyun Sung Kim, Kwangho Jeong, Kwanghee Cho, Sang Wan Cho, Yeonjin Yi

Research output: Contribution to journal › Article

24 Citations (Scopus)

Abstract

The electronic structures of pentacene/MoO₃/Al and pentacene/Al were studied using in situ photoemission spectroscopy. The secondary electron cutoffs, highest occupied molecular orbitals (HOMOs) and core level changes were measured upon deposition of the pentacene and MoO₃ to study the electronic structures at the interface. We obtained complete energy level diagrams for each interface, showing that the insertion of the MoO₃ layer between pentacene and Al induces the HOMO level shift of pentacene toward lower binding energies compared to that without MoO₃. This results in reduction of the hole injection barrier, which is responsible for the improvements in electronic device performance.

Original language	English
Pages (from-to)	2502-2505
Number of pages	4
Journal	Synthetic Metals
Volume	159
Issue number	23-24
DOIs	https://doi.org/10.1016/j.synthmet.2009.08.041
Publication status	Published - 2009 Dec

Bibliographical note

Funding Information:
This work was supported by Korea Research Council of Fundamental Science and Technology (KRCF) through the KRISS project of “Development of Advanced Industrial Metrology” and a research project of the Korea Research Foundation (KRF, Grant No. 2009-0070876 ) and BK21 project of the KRF.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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@article{bb5c6b93e30e4731b5b6467ff0ae938e,

title = "The origin of hole injection improvements with MoO3/Al bilayer electrodes in pentacene thin-film transistors",

abstract = "The electronic structures of pentacene/MoO3/Al and pentacene/Al were studied using in situ photoemission spectroscopy. The secondary electron cutoffs, highest occupied molecular orbitals (HOMOs) and core level changes were measured upon deposition of the pentacene and MoO3 to study the electronic structures at the interface. We obtained complete energy level diagrams for each interface, showing that the insertion of the MoO3 layer between pentacene and Al induces the HOMO level shift of pentacene toward lower binding energies compared to that without MoO3. This results in reduction of the hole injection barrier, which is responsible for the improvements in electronic device performance.",

author = "Pyungeun Jeon and Kyul Han and Hyunbok Lee and Kim, {Hyun Sung} and Kwangho Jeong and Kwanghee Cho and Cho, {Sang Wan} and Yeonjin Yi",

note = "Funding Information: This work was supported by Korea Research Council of Fundamental Science and Technology (KRCF) through the KRISS project of “Development of Advanced Industrial Metrology” and a research project of the Korea Research Foundation (KRF, Grant No. 2009-0070876 ) and BK21 project of the KRF.",

year = "2009",

month = dec,

doi = "10.1016/j.synthmet.2009.08.041",

language = "English",

volume = "159",

pages = "2502--2505",

journal = "Synthetic Metals",

issn = "0379-6779",

publisher = "Elsevier BV",

number = "23-24",

}

TY - JOUR

T1 - The origin of hole injection improvements with MoO3/Al bilayer electrodes in pentacene thin-film transistors

AU - Jeon, Pyungeun

AU - Han, Kyul

AU - Lee, Hyunbok

AU - Kim, Hyun Sung

AU - Jeong, Kwangho

AU - Cho, Kwanghee

AU - Cho, Sang Wan

AU - Yi, Yeonjin

N1 - Funding Information: This work was supported by Korea Research Council of Fundamental Science and Technology (KRCF) through the KRISS project of “Development of Advanced Industrial Metrology” and a research project of the Korea Research Foundation (KRF, Grant No. 2009-0070876 ) and BK21 project of the KRF.

PY - 2009/12

Y1 - 2009/12

N2 - The electronic structures of pentacene/MoO3/Al and pentacene/Al were studied using in situ photoemission spectroscopy. The secondary electron cutoffs, highest occupied molecular orbitals (HOMOs) and core level changes were measured upon deposition of the pentacene and MoO3 to study the electronic structures at the interface. We obtained complete energy level diagrams for each interface, showing that the insertion of the MoO3 layer between pentacene and Al induces the HOMO level shift of pentacene toward lower binding energies compared to that without MoO3. This results in reduction of the hole injection barrier, which is responsible for the improvements in electronic device performance.

AB - The electronic structures of pentacene/MoO3/Al and pentacene/Al were studied using in situ photoemission spectroscopy. The secondary electron cutoffs, highest occupied molecular orbitals (HOMOs) and core level changes were measured upon deposition of the pentacene and MoO3 to study the electronic structures at the interface. We obtained complete energy level diagrams for each interface, showing that the insertion of the MoO3 layer between pentacene and Al induces the HOMO level shift of pentacene toward lower binding energies compared to that without MoO3. This results in reduction of the hole injection barrier, which is responsible for the improvements in electronic device performance.

UR - http://www.scopus.com/inward/record.url?scp=71949110027&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=71949110027&partnerID=8YFLogxK

U2 - 10.1016/j.synthmet.2009.08.041

DO - 10.1016/j.synthmet.2009.08.041

M3 - Article

AN - SCOPUS:71949110027

VL - 159

SP - 2502

EP - 2505

JO - Synthetic Metals

JF - Synthetic Metals

SN - 0379-6779

IS - 23-24

ER -