The origin of hole injection improvements with MoO 3 /Al bilayer electrodes in pentacene thin-film transistors

Pyungeun Jeon, Kyul Han, Hyunbok Lee, Hyun Sung Kim, KwangHo Jeong, Kwanghee Cho, Sangwan Cho, Yeonjin Yi

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

The electronic structures of pentacene/MoO 3 /Al and pentacene/Al were studied using in situ photoemission spectroscopy. The secondary electron cutoffs, highest occupied molecular orbitals (HOMOs) and core level changes were measured upon deposition of the pentacene and MoO 3 to study the electronic structures at the interface. We obtained complete energy level diagrams for each interface, showing that the insertion of the MoO 3 layer between pentacene and Al induces the HOMO level shift of pentacene toward lower binding energies compared to that without MoO 3 . This results in reduction of the hole injection barrier, which is responsible for the improvements in electronic device performance.

Original languageEnglish
Pages (from-to)2502-2505
Number of pages4
JournalSynthetic Metals
Volume159
Issue number23-24
DOIs
Publication statusPublished - 2009 Dec 1

Fingerprint

Molecular orbitals
Thin film transistors
Electronic structure
molecular orbitals
transistors
injection
electronic structure
Electrodes
Core levels
electrodes
Photoelectron spectroscopy
thin films
Binding energy
Electron energy levels
insertion
photoelectric emission
cut-off
binding energy
energy levels
diagrams

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Cite this

Jeon, Pyungeun ; Han, Kyul ; Lee, Hyunbok ; Kim, Hyun Sung ; Jeong, KwangHo ; Cho, Kwanghee ; Cho, Sangwan ; Yi, Yeonjin. / The origin of hole injection improvements with MoO 3 /Al bilayer electrodes in pentacene thin-film transistors In: Synthetic Metals. 2009 ; Vol. 159, No. 23-24. pp. 2502-2505.
@article{bb5c6b93e30e4731b5b6467ff0ae938e,
title = "The origin of hole injection improvements with MoO 3 /Al bilayer electrodes in pentacene thin-film transistors",
abstract = "The electronic structures of pentacene/MoO 3 /Al and pentacene/Al were studied using in situ photoemission spectroscopy. The secondary electron cutoffs, highest occupied molecular orbitals (HOMOs) and core level changes were measured upon deposition of the pentacene and MoO 3 to study the electronic structures at the interface. We obtained complete energy level diagrams for each interface, showing that the insertion of the MoO 3 layer between pentacene and Al induces the HOMO level shift of pentacene toward lower binding energies compared to that without MoO 3 . This results in reduction of the hole injection barrier, which is responsible for the improvements in electronic device performance.",
author = "Pyungeun Jeon and Kyul Han and Hyunbok Lee and Kim, {Hyun Sung} and KwangHo Jeong and Kwanghee Cho and Sangwan Cho and Yeonjin Yi",
year = "2009",
month = "12",
day = "1",
doi = "10.1016/j.synthmet.2009.08.041",
language = "English",
volume = "159",
pages = "2502--2505",
journal = "Synthetic Metals",
issn = "0379-6779",
publisher = "Elsevier BV",
number = "23-24",

}

The origin of hole injection improvements with MoO 3 /Al bilayer electrodes in pentacene thin-film transistors . / Jeon, Pyungeun; Han, Kyul; Lee, Hyunbok; Kim, Hyun Sung; Jeong, KwangHo; Cho, Kwanghee; Cho, Sangwan; Yi, Yeonjin.

In: Synthetic Metals, Vol. 159, No. 23-24, 01.12.2009, p. 2502-2505.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The origin of hole injection improvements with MoO 3 /Al bilayer electrodes in pentacene thin-film transistors

AU - Jeon, Pyungeun

AU - Han, Kyul

AU - Lee, Hyunbok

AU - Kim, Hyun Sung

AU - Jeong, KwangHo

AU - Cho, Kwanghee

AU - Cho, Sangwan

AU - Yi, Yeonjin

PY - 2009/12/1

Y1 - 2009/12/1

N2 - The electronic structures of pentacene/MoO 3 /Al and pentacene/Al were studied using in situ photoemission spectroscopy. The secondary electron cutoffs, highest occupied molecular orbitals (HOMOs) and core level changes were measured upon deposition of the pentacene and MoO 3 to study the electronic structures at the interface. We obtained complete energy level diagrams for each interface, showing that the insertion of the MoO 3 layer between pentacene and Al induces the HOMO level shift of pentacene toward lower binding energies compared to that without MoO 3 . This results in reduction of the hole injection barrier, which is responsible for the improvements in electronic device performance.

AB - The electronic structures of pentacene/MoO 3 /Al and pentacene/Al were studied using in situ photoemission spectroscopy. The secondary electron cutoffs, highest occupied molecular orbitals (HOMOs) and core level changes were measured upon deposition of the pentacene and MoO 3 to study the electronic structures at the interface. We obtained complete energy level diagrams for each interface, showing that the insertion of the MoO 3 layer between pentacene and Al induces the HOMO level shift of pentacene toward lower binding energies compared to that without MoO 3 . This results in reduction of the hole injection barrier, which is responsible for the improvements in electronic device performance.

UR - http://www.scopus.com/inward/record.url?scp=71949110027&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=71949110027&partnerID=8YFLogxK

U2 - 10.1016/j.synthmet.2009.08.041

DO - 10.1016/j.synthmet.2009.08.041

M3 - Article

VL - 159

SP - 2502

EP - 2505

JO - Synthetic Metals

JF - Synthetic Metals

SN - 0379-6779

IS - 23-24

ER -