Abstract
The electronic structures of pentacene/MoO 3 /Al and pentacene/Al were studied using in situ photoemission spectroscopy. The secondary electron cutoffs, highest occupied molecular orbitals (HOMOs) and core level changes were measured upon deposition of the pentacene and MoO 3 to study the electronic structures at the interface. We obtained complete energy level diagrams for each interface, showing that the insertion of the MoO 3 layer between pentacene and Al induces the HOMO level shift of pentacene toward lower binding energies compared to that without MoO 3 . This results in reduction of the hole injection barrier, which is responsible for the improvements in electronic device performance.
| Original language | English |
|---|---|
| Pages (from-to) | 2502-2505 |
| Number of pages | 4 |
| Journal | Synthetic Metals |
| Volume | 159 |
| Issue number | 23-24 |
| DOIs | |
| Publication status | Published - 2009 Dec 1 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys
- Materials Chemistry
Cite this
}
The origin of hole injection improvements with MoO 3 /Al bilayer electrodes in pentacene thin-film transistors . / Jeon, Pyungeun; Han, Kyul; Lee, Hyunbok; Kim, Hyun Sung; Jeong, KwangHo; Cho, Kwanghee; Cho, Sangwan; Yi, Yeonjin.
In: Synthetic Metals, Vol. 159, No. 23-24, 01.12.2009, p. 2502-2505.Research output: Contribution to journal › Article
TY - JOUR
T1 - The origin of hole injection improvements with MoO 3 /Al bilayer electrodes in pentacene thin-film transistors
AU - Jeon, Pyungeun
AU - Han, Kyul
AU - Lee, Hyunbok
AU - Kim, Hyun Sung
AU - Jeong, KwangHo
AU - Cho, Kwanghee
AU - Cho, Sangwan
AU - Yi, Yeonjin
PY - 2009/12/1
Y1 - 2009/12/1
N2 - The electronic structures of pentacene/MoO 3 /Al and pentacene/Al were studied using in situ photoemission spectroscopy. The secondary electron cutoffs, highest occupied molecular orbitals (HOMOs) and core level changes were measured upon deposition of the pentacene and MoO 3 to study the electronic structures at the interface. We obtained complete energy level diagrams for each interface, showing that the insertion of the MoO 3 layer between pentacene and Al induces the HOMO level shift of pentacene toward lower binding energies compared to that without MoO 3 . This results in reduction of the hole injection barrier, which is responsible for the improvements in electronic device performance.
AB - The electronic structures of pentacene/MoO 3 /Al and pentacene/Al were studied using in situ photoemission spectroscopy. The secondary electron cutoffs, highest occupied molecular orbitals (HOMOs) and core level changes were measured upon deposition of the pentacene and MoO 3 to study the electronic structures at the interface. We obtained complete energy level diagrams for each interface, showing that the insertion of the MoO 3 layer between pentacene and Al induces the HOMO level shift of pentacene toward lower binding energies compared to that without MoO 3 . This results in reduction of the hole injection barrier, which is responsible for the improvements in electronic device performance.
UR - http://www.scopus.com/inward/record.url?scp=71949110027&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=71949110027&partnerID=8YFLogxK
U2 - 10.1016/j.synthmet.2009.08.041
DO - 10.1016/j.synthmet.2009.08.041
M3 - Article
VL - 159
SP - 2502
EP - 2505
JO - Synthetic Metals
JF - Synthetic Metals
SN - 0379-6779
IS - 23-24
ER -