The origin of photoluminescence in Ge-implanted SiO2 layers

H. B. Kim, K. H. Chae, C. N. Whang, J. Y. Jeong, M. S. Oh, S. Im, J. H. Song

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Ge ions were implanted at 100 keV with 3 × 1016 cm 2 into a 300 nm thick SiO2 layer on Si. Visible photoluminescence (PL) around 2.1 eV from an as-implanted sample is observed, and faded out by subsequent annealing at 900°C for 2 h. However, PL shows up again after annealing above 900°C at the same peak position. Compared with the as-implanted sample, significant increase of Ge-Ge bonds is measured in X-ray photoelectron spectroscopy, and the formation of Ge nanocrystals with a diameter of 5 nm are observed in transmission electron microscopy from the sample annealed at 1100°C. We conclude that the PL peak from the sample annealed above 900°C is caused by the quantum confinement effects from Ge nanocrystals, while the luminescence from the as-implanted sample is due to some radiative defects formed by Ge implantation.

Original languageEnglish
Pages (from-to)281-284
Number of pages4
JournalJournal of Luminescence
Issue number1-4
Publication statusPublished - 1998 Dec

All Science Journal Classification (ASJC) codes

  • Biophysics
  • Biochemistry
  • Chemistry(all)
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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    Kim, H. B., Chae, K. H., Whang, C. N., Jeong, J. Y., Oh, M. S., Im, S., & Song, J. H. (1998). The origin of photoluminescence in Ge-implanted SiO2 layers. Journal of Luminescence, 80(1-4), 281-284.