The origin of the resistance change in GeSbTe films

Moon Hyung Jang, Seung Jong Park, Sung Jin Park, Mann Ho Cho, E. Z. Kurmaev, L. D. Finkelstein, Gap Soo Chang

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Abstract

Amorphous Ge2 Sb2 Te5 (a-GST) films were deposited by ion beam sputtering deposition. Extended x-ray absorption fine structure (EXAFS) data confirmed the existence of the Ge-Ge homopolar bonds in the films. Raman spectra also indicated that the Ge tetrahedral coordination in the a-GST film disappeared after an annealing treatment above 220 °C. Resonantly excited Ge L2,3 x-ray emission spectra (which probe occupied Ge 3d4s -electronic states) show that the phase change from the amorphous to crystalline state is accompanied by a reduction in the Ge I (L2)/I (L 3) intensity ratio due to a L2 L3 N Coster-Kronig transition, indicating that the number of carriers is increased in the Ge 4sp valence state. These findings constitute direct evidence for the contribution of the Ge electronic states to the resistivity change.

Original languageEnglish
Article number152113
JournalApplied Physics Letters
Volume97
Issue number15
DOIs
Publication statusPublished - 2010 Oct 11

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Jang, M. H., Park, S. J., Park, S. J., Cho, M. H., Kurmaev, E. Z., Finkelstein, L. D., & Chang, G. S. (2010). The origin of the resistance change in GeSbTe films. Applied Physics Letters, 97(15), [152113]. https://doi.org/10.1063/1.3499751