The oxides growth during high-temperature oxidation of Si 1-x Gex nanowires

Sun Wook Kim, Sang Yeon Kim, Dae Hong Ko

Research output: Contribution to journalArticle

Abstract

Concerning the oxidation behavior of Si 1-xGex (x = 0.15, 0.3) nanowires at high temperature, Si 1-xGex nanowires were thermally oxidized for various lengths of time compared with Si nanowires, Si and Si 1-xGex thin films. The structural and compositional properties of the oxidized nanowires were characterized using several transmission electron microscopy (TEM) techniques including energy dispersive X-ray spectroscopy (EDS), which confirm that the oxidation rates of Si 1-xGex and Si (silicon) nanowires were saturated with increasing oxidation time due to retarding behavior, while the oxidation rate of Si 1-xGex nanowires were faster than that of Si nanowires. In addition, the differences in Ge (germanium) content and stress distribution contribute to the observed differences in oxidation behavior.

Original languageEnglish
Pages (from-to)6096-6099
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume12
Issue number7
DOIs
Publication statusPublished - 2012 Jul 1

Fingerprint

Nanowires
Thermooxidation
Silicon
Oxides
nanowires
oxidation
Temperature
oxides
silicon
Growth
Oxidation
X-Ray Emission Spectrometry
Germanium
Transmission Electron Microscopy
stress distribution
Stress concentration
Energy dispersive spectroscopy
germanium
retarding
Transmission electron microscopy

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

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abstract = "Concerning the oxidation behavior of Si 1-xGex (x = 0.15, 0.3) nanowires at high temperature, Si 1-xGex nanowires were thermally oxidized for various lengths of time compared with Si nanowires, Si and Si 1-xGex thin films. The structural and compositional properties of the oxidized nanowires were characterized using several transmission electron microscopy (TEM) techniques including energy dispersive X-ray spectroscopy (EDS), which confirm that the oxidation rates of Si 1-xGex and Si (silicon) nanowires were saturated with increasing oxidation time due to retarding behavior, while the oxidation rate of Si 1-xGex nanowires were faster than that of Si nanowires. In addition, the differences in Ge (germanium) content and stress distribution contribute to the observed differences in oxidation behavior.",
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The oxides growth during high-temperature oxidation of Si 1-x Gex nanowires. / Kim, Sun Wook; Kim, Sang Yeon; Ko, Dae Hong.

In: Journal of Nanoscience and Nanotechnology, Vol. 12, No. 7, 01.07.2012, p. 6096-6099.

Research output: Contribution to journalArticle

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