The oxides growth during high-temperature oxidation of Si 1-x Gex nanowires

Sun Wook Kim; Sang Yeon Kim; Dae Hong Ko

doi:10.1166/jnn.2012.6337

The oxides growth during high-temperature oxidation of Si _1-x Gex nanowires

Sun Wook Kim, Sang Yeon Kim, Dae Hong Ko

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Concerning the oxidation behavior of Si _1-xGex (x = 0.15, 0.3) nanowires at high temperature, Si _1-xGex nanowires were thermally oxidized for various lengths of time compared with Si nanowires, Si and Si _1-xGex thin films. The structural and compositional properties of the oxidized nanowires were characterized using several transmission electron microscopy (TEM) techniques including energy dispersive X-ray spectroscopy (EDS), which confirm that the oxidation rates of Si _1-xGex and Si (silicon) nanowires were saturated with increasing oxidation time due to retarding behavior, while the oxidation rate of Si _1-xGex nanowires were faster than that of Si nanowires. In addition, the differences in Ge (germanium) content and stress distribution contribute to the observed differences in oxidation behavior.

Original language	English
Pages (from-to)	6096-6099
Number of pages	4
Journal	Journal of Nanoscience and Nanotechnology
Volume	12
Issue number	7
DOIs	https://doi.org/10.1166/jnn.2012.6337
Publication status	Published - 2012 Jul

All Science Journal Classification (ASJC) codes

Bioengineering
Chemistry(all)
Biomedical Engineering
Materials Science(all)
Condensed Matter Physics

Access to Document

10.1166/jnn.2012.6337

Cite this

@article{7d9f81282ead4ebfb0ec66ba17ccab64,

title = "The oxides growth during high-temperature oxidation of Si 1-x Gex nanowires",

abstract = "Concerning the oxidation behavior of Si 1-xGex (x = 0.15, 0.3) nanowires at high temperature, Si 1-xGex nanowires were thermally oxidized for various lengths of time compared with Si nanowires, Si and Si 1-xGex thin films. The structural and compositional properties of the oxidized nanowires were characterized using several transmission electron microscopy (TEM) techniques including energy dispersive X-ray spectroscopy (EDS), which confirm that the oxidation rates of Si 1-xGex and Si (silicon) nanowires were saturated with increasing oxidation time due to retarding behavior, while the oxidation rate of Si 1-xGex nanowires were faster than that of Si nanowires. In addition, the differences in Ge (germanium) content and stress distribution contribute to the observed differences in oxidation behavior.",

author = "Kim, {Sun Wook} and Kim, {Sang Yeon} and Ko, {Dae Hong}",

year = "2012",

month = jul,

doi = "10.1166/jnn.2012.6337",

language = "English",

volume = "12",

pages = "6096--6099",

journal = "Journal of Nanoscience and Nanotechnology",

issn = "1533-4880",

publisher = "American Scientific Publishers",

number = "7",

}

TY - JOUR

T1 - The oxides growth during high-temperature oxidation of Si 1-x Gex nanowires

AU - Kim, Sun Wook

AU - Kim, Sang Yeon

AU - Ko, Dae Hong

PY - 2012/7

Y1 - 2012/7

N2 - Concerning the oxidation behavior of Si 1-xGex (x = 0.15, 0.3) nanowires at high temperature, Si 1-xGex nanowires were thermally oxidized for various lengths of time compared with Si nanowires, Si and Si 1-xGex thin films. The structural and compositional properties of the oxidized nanowires were characterized using several transmission electron microscopy (TEM) techniques including energy dispersive X-ray spectroscopy (EDS), which confirm that the oxidation rates of Si 1-xGex and Si (silicon) nanowires were saturated with increasing oxidation time due to retarding behavior, while the oxidation rate of Si 1-xGex nanowires were faster than that of Si nanowires. In addition, the differences in Ge (germanium) content and stress distribution contribute to the observed differences in oxidation behavior.

AB - Concerning the oxidation behavior of Si 1-xGex (x = 0.15, 0.3) nanowires at high temperature, Si 1-xGex nanowires were thermally oxidized for various lengths of time compared with Si nanowires, Si and Si 1-xGex thin films. The structural and compositional properties of the oxidized nanowires were characterized using several transmission electron microscopy (TEM) techniques including energy dispersive X-ray spectroscopy (EDS), which confirm that the oxidation rates of Si 1-xGex and Si (silicon) nanowires were saturated with increasing oxidation time due to retarding behavior, while the oxidation rate of Si 1-xGex nanowires were faster than that of Si nanowires. In addition, the differences in Ge (germanium) content and stress distribution contribute to the observed differences in oxidation behavior.

UR - http://www.scopus.com/inward/record.url?scp=84865138142&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84865138142&partnerID=8YFLogxK

U2 - 10.1166/jnn.2012.6337

DO - 10.1166/jnn.2012.6337

M3 - Article

AN - SCOPUS:84865138142

VL - 12

SP - 6096

EP - 6099

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

SN - 1533-4880

IS - 7

ER -

The oxides growth during high-temperature oxidation of Si _1-x Gex nanowires

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this