Abstract
Concerning the oxidation behavior of Si 1-xGex (x = 0.15, 0.3) nanowires at high temperature, Si 1-xGex nanowires were thermally oxidized for various lengths of time compared with Si nanowires, Si and Si 1-xGex thin films. The structural and compositional properties of the oxidized nanowires were characterized using several transmission electron microscopy (TEM) techniques including energy dispersive X-ray spectroscopy (EDS), which confirm that the oxidation rates of Si 1-xGex and Si (silicon) nanowires were saturated with increasing oxidation time due to retarding behavior, while the oxidation rate of Si 1-xGex nanowires were faster than that of Si nanowires. In addition, the differences in Ge (germanium) content and stress distribution contribute to the observed differences in oxidation behavior.
Original language | English |
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Pages (from-to) | 6096-6099 |
Number of pages | 4 |
Journal | Journal of Nanoscience and Nanotechnology |
Volume | 12 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2012 Jul |
All Science Journal Classification (ASJC) codes
- Bioengineering
- Chemistry(all)
- Biomedical Engineering
- Materials Science(all)
- Condensed Matter Physics