Abstract
Concerning the oxidation behavior of Si 1-xGex (x = 0.15, 0.3) nanowires at high temperature, Si 1-xGex nanowires were thermally oxidized for various lengths of time compared with Si nanowires, Si and Si 1-xGex thin films. The structural and compositional properties of the oxidized nanowires were characterized using several transmission electron microscopy (TEM) techniques including energy dispersive X-ray spectroscopy (EDS), which confirm that the oxidation rates of Si 1-xGex and Si (silicon) nanowires were saturated with increasing oxidation time due to retarding behavior, while the oxidation rate of Si 1-xGex nanowires were faster than that of Si nanowires. In addition, the differences in Ge (germanium) content and stress distribution contribute to the observed differences in oxidation behavior.
| Original language | English |
|---|---|
| Pages (from-to) | 6096-6099 |
| Number of pages | 4 |
| Journal | Journal of Nanoscience and Nanotechnology |
| Volume | 12 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2012 Jul 1 |
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All Science Journal Classification (ASJC) codes
- Bioengineering
- Chemistry(all)
- Biomedical Engineering
- Materials Science(all)
- Condensed Matter Physics
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The oxides growth during high-temperature oxidation of Si 1-x Gex nanowires. / Kim, Sun Wook; Kim, Sang Yeon; Ko, Dae Hong.
In: Journal of Nanoscience and Nanotechnology, Vol. 12, No. 7, 01.07.2012, p. 6096-6099.Research output: Contribution to journal › Article
TY - JOUR
T1 - The oxides growth during high-temperature oxidation of Si 1-x Gex nanowires
AU - Kim, Sun Wook
AU - Kim, Sang Yeon
AU - Ko, Dae Hong
PY - 2012/7/1
Y1 - 2012/7/1
N2 - Concerning the oxidation behavior of Si 1-xGex (x = 0.15, 0.3) nanowires at high temperature, Si 1-xGex nanowires were thermally oxidized for various lengths of time compared with Si nanowires, Si and Si 1-xGex thin films. The structural and compositional properties of the oxidized nanowires were characterized using several transmission electron microscopy (TEM) techniques including energy dispersive X-ray spectroscopy (EDS), which confirm that the oxidation rates of Si 1-xGex and Si (silicon) nanowires were saturated with increasing oxidation time due to retarding behavior, while the oxidation rate of Si 1-xGex nanowires were faster than that of Si nanowires. In addition, the differences in Ge (germanium) content and stress distribution contribute to the observed differences in oxidation behavior.
AB - Concerning the oxidation behavior of Si 1-xGex (x = 0.15, 0.3) nanowires at high temperature, Si 1-xGex nanowires were thermally oxidized for various lengths of time compared with Si nanowires, Si and Si 1-xGex thin films. The structural and compositional properties of the oxidized nanowires were characterized using several transmission electron microscopy (TEM) techniques including energy dispersive X-ray spectroscopy (EDS), which confirm that the oxidation rates of Si 1-xGex and Si (silicon) nanowires were saturated with increasing oxidation time due to retarding behavior, while the oxidation rate of Si 1-xGex nanowires were faster than that of Si nanowires. In addition, the differences in Ge (germanium) content and stress distribution contribute to the observed differences in oxidation behavior.
UR - http://www.scopus.com/inward/record.url?scp=84865138142&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84865138142&partnerID=8YFLogxK
U2 - 10.1166/jnn.2012.6337
DO - 10.1166/jnn.2012.6337
M3 - Article
AN - SCOPUS:84865138142
VL - 12
SP - 6096
EP - 6099
JO - Journal of Nanoscience and Nanotechnology
JF - Journal of Nanoscience and Nanotechnology
SN - 1533-4880
IS - 7
ER -