The p-type doping in SWCNT transparent conductive films by spontaneous reduction potential using Ag and Ni

Hyun Seok Oh, Kwonwoo Shin, Su Jeong Lee, Daeseob Shim, Jong Hun Han, Jae Min Myoung

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The effect of p-type doping by spontaneous reduction using Ag and Ni on electrical properties of single-walled carbon nanotube (SWCNT) transparent conductive films was investigated. The Ag- and Ni-doped SWCNT films have a transmittance of 86.9-88.4% at 550 nm and a sheet resistance of 226-513 /sq in a range of the concentration from 10 to 200 mM. Using Raman and UV-vis-NIR spectroscopy, it was observed that the electrical structure of SWCNTs is changed by p-type doping. So, Ag and Ni could be used as effective p-type dopants to improve electrical properties of SWCNT films.

Original languageEnglish
Pages (from-to)29-33
Number of pages5
JournalChemical Physics Letters
Volume548
DOIs
Publication statusPublished - 2012 Oct 1

Fingerprint

Conductive films
Single-walled carbon nanotubes (SWCN)
carbon nanotubes
Doping (additives)
Electric properties
electrical properties
Sheet resistance
transmittance
Spectroscopy
spectroscopy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

Cite this

Oh, Hyun Seok ; Shin, Kwonwoo ; Lee, Su Jeong ; Shim, Daeseob ; Han, Jong Hun ; Myoung, Jae Min. / The p-type doping in SWCNT transparent conductive films by spontaneous reduction potential using Ag and Ni. In: Chemical Physics Letters. 2012 ; Vol. 548. pp. 29-33.
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The p-type doping in SWCNT transparent conductive films by spontaneous reduction potential using Ag and Ni. / Oh, Hyun Seok; Shin, Kwonwoo; Lee, Su Jeong; Shim, Daeseob; Han, Jong Hun; Myoung, Jae Min.

In: Chemical Physics Letters, Vol. 548, 01.10.2012, p. 29-33.

Research output: Contribution to journalArticle

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