Abstract
The effect of p-type doping by spontaneous reduction using Ag and Ni on electrical properties of single-walled carbon nanotube (SWCNT) transparent conductive films was investigated. The Ag- and Ni-doped SWCNT films have a transmittance of 86.9-88.4% at 550 nm and a sheet resistance of 226-513 /sq in a range of the concentration from 10 to 200 mM. Using Raman and UV-vis-NIR spectroscopy, it was observed that the electrical structure of SWCNTs is changed by p-type doping. So, Ag and Ni could be used as effective p-type dopants to improve electrical properties of SWCNT films.
| Original language | English |
|---|---|
| Pages (from-to) | 29-33 |
| Number of pages | 5 |
| Journal | Chemical Physics Letters |
| Volume | 548 |
| DOIs | |
| Publication status | Published - 2012 Oct 1 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
- Physical and Theoretical Chemistry
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Oh, H. S., Shin, K., Lee, S. J., Shim, D., Han, J. H., & Myoung, J. M. (2012). The p-type doping in SWCNT transparent conductive films by spontaneous reduction potential using Ag and Ni. Chemical Physics Letters, 548, 29-33. https://doi.org/10.1016/j.cplett.2012.08.005