The p-type doping in SWCNT transparent conductive films by spontaneous reduction potential using Ag and Ni

Hyun Seok Oh; Kwonwoo Shin; Su Jeong Lee; Daeseob Shim; Jong Hun Han; Jae Min Myoung

doi:10.1016/j.cplett.2012.08.005

The p-type doping in SWCNT transparent conductive films by spontaneous reduction potential using Ag and Ni

Hyun Seok Oh, Kwonwoo Shin, Su Jeong Lee, Daeseob Shim, Jong Hun Han, Jae Min Myoung

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The effect of p-type doping by spontaneous reduction using Ag and Ni on electrical properties of single-walled carbon nanotube (SWCNT) transparent conductive films was investigated. The Ag- and Ni-doped SWCNT films have a transmittance of 86.9-88.4% at 550 nm and a sheet resistance of 226-513 /sq in a range of the concentration from 10 to 200 mM. Using Raman and UV-vis-NIR spectroscopy, it was observed that the electrical structure of SWCNTs is changed by p-type doping. So, Ag and Ni could be used as effective p-type dopants to improve electrical properties of SWCNT films.

Original language	English
Pages (from-to)	29-33
Number of pages	5
Journal	Chemical Physics Letters
Volume	548
DOIs	https://doi.org/10.1016/j.cplett.2012.08.005
Publication status	Published - 2012 Oct 1

Bibliographical note

Funding Information:
This work was supported by WCU (World Class University) program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology ( R32-20031 ).

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)
Physical and Theoretical Chemistry

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abstract = "The effect of p-type doping by spontaneous reduction using Ag and Ni on electrical properties of single-walled carbon nanotube (SWCNT) transparent conductive films was investigated. The Ag- and Ni-doped SWCNT films have a transmittance of 86.9-88.4% at 550 nm and a sheet resistance of 226-513 /sq in a range of the concentration from 10 to 200 mM. Using Raman and UV-vis-NIR spectroscopy, it was observed that the electrical structure of SWCNTs is changed by p-type doping. So, Ag and Ni could be used as effective p-type dopants to improve electrical properties of SWCNT films.",

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AU - Shim, Daeseob

AU - Han, Jong Hun

AU - Myoung, Jae Min

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