Abstract
Reflectivity changes in oxygen-incorporated Ge2Sb 2Te5 (GST) films were investigated via a laser-induced crystallization process. The crystallization process showed that the phase change speed and the laser power required for crystallization become faster and larger in GST films with a characteristic quantity of oxygen. We confirmed that a dominant grain growth mode during the laser crystallization is a major determinant for the speed of phase change in GST films with a characteristic quantity of oxygen. JMA results and changes in surface morphology indicate that the origin of the growth mode change is due to an increase in the number of initial nucleation sites produced in the oxygen-incorporated GST films. After the re-amorphization process, oxygen-incorporated GST films show more rapid and more stable phase change properties than that of GST films.
| Original language | English |
|---|---|
| Journal | Journal of the Electrochemical Society |
| Volume | 158 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2011 Apr 4 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry
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The phase change effect of oxygen-incorporation in GeSbTe films. / Jang, Moon Hyung; Park, Seung Jong; Lim, Dong Hyeok; Park, Sung Jin; Cho, Mann-Ho; Ko, Dae Hong; Cho, Seong Jin.
In: Journal of the Electrochemical Society, Vol. 158, No. 5, 04.04.2011.Research output: Contribution to journal › Article
TY - JOUR
T1 - The phase change effect of oxygen-incorporation in GeSbTe films
AU - Jang, Moon Hyung
AU - Park, Seung Jong
AU - Lim, Dong Hyeok
AU - Park, Sung Jin
AU - Cho, Mann-Ho
AU - Ko, Dae Hong
AU - Cho, Seong Jin
PY - 2011/4/4
Y1 - 2011/4/4
N2 - Reflectivity changes in oxygen-incorporated Ge2Sb 2Te5 (GST) films were investigated via a laser-induced crystallization process. The crystallization process showed that the phase change speed and the laser power required for crystallization become faster and larger in GST films with a characteristic quantity of oxygen. We confirmed that a dominant grain growth mode during the laser crystallization is a major determinant for the speed of phase change in GST films with a characteristic quantity of oxygen. JMA results and changes in surface morphology indicate that the origin of the growth mode change is due to an increase in the number of initial nucleation sites produced in the oxygen-incorporated GST films. After the re-amorphization process, oxygen-incorporated GST films show more rapid and more stable phase change properties than that of GST films.
AB - Reflectivity changes in oxygen-incorporated Ge2Sb 2Te5 (GST) films were investigated via a laser-induced crystallization process. The crystallization process showed that the phase change speed and the laser power required for crystallization become faster and larger in GST films with a characteristic quantity of oxygen. We confirmed that a dominant grain growth mode during the laser crystallization is a major determinant for the speed of phase change in GST films with a characteristic quantity of oxygen. JMA results and changes in surface morphology indicate that the origin of the growth mode change is due to an increase in the number of initial nucleation sites produced in the oxygen-incorporated GST films. After the re-amorphization process, oxygen-incorporated GST films show more rapid and more stable phase change properties than that of GST films.
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U2 - 10.1149/1.3556609
DO - 10.1149/1.3556609
M3 - Article
VL - 158
JO - Journal of the Electrochemical Society
JF - Journal of the Electrochemical Society
SN - 0013-4651
IS - 5
ER -