The phase change effect of oxygen-incorporation in GeSbTe films

Moon Hyung Jang; Seung Jong Park; Dong Hyeok Lim; Sung Jin Park; Mann Ho Cho; Dae Hong Ko; Seong Jin Cho

doi:10.1149/1.3556609

The phase change effect of oxygen-incorporation in GeSbTe films

Moon Hyung Jang, Seung Jong Park, Dong Hyeok Lim, Sung Jin Park, Mann Ho Cho, Dae Hong Ko, Seong Jin Cho

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Reflectivity changes in oxygen-incorporated Ge₂Sb ₂Te₅ (GST) films were investigated via a laser-induced crystallization process. The crystallization process showed that the phase change speed and the laser power required for crystallization become faster and larger in GST films with a characteristic quantity of oxygen. We confirmed that a dominant grain growth mode during the laser crystallization is a major determinant for the speed of phase change in GST films with a characteristic quantity of oxygen. JMA results and changes in surface morphology indicate that the origin of the growth mode change is due to an increase in the number of initial nucleation sites produced in the oxygen-incorporated GST films. After the re-amorphization process, oxygen-incorporated GST films show more rapid and more stable phase change properties than that of GST films.

Original language	English
Pages (from-to)	H471-H476
Journal	Journal of the Electrochemical Society
Volume	158
Issue number	5
DOIs	https://doi.org/10.1149/1.3556609
Publication status	Published - 2011

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

Access to Document

10.1149/1.3556609

Fingerprint Dive into the research topics of 'The phase change effect of oxygen-incorporation in GeSbTe films'. Together they form a unique fingerprint.

Cite this

@article{4998955451c94676964908b227a981e1,

title = "The phase change effect of oxygen-incorporation in GeSbTe films",

abstract = "Reflectivity changes in oxygen-incorporated Ge2Sb 2Te5 (GST) films were investigated via a laser-induced crystallization process. The crystallization process showed that the phase change speed and the laser power required for crystallization become faster and larger in GST films with a characteristic quantity of oxygen. We confirmed that a dominant grain growth mode during the laser crystallization is a major determinant for the speed of phase change in GST films with a characteristic quantity of oxygen. JMA results and changes in surface morphology indicate that the origin of the growth mode change is due to an increase in the number of initial nucleation sites produced in the oxygen-incorporated GST films. After the re-amorphization process, oxygen-incorporated GST films show more rapid and more stable phase change properties than that of GST films.",

author = "Jang, {Moon Hyung} and Park, {Seung Jong} and Lim, {Dong Hyeok} and Park, {Sung Jin} and Cho, {Mann Ho} and Ko, {Dae Hong} and Cho, {Seong Jin}",

year = "2011",

doi = "10.1149/1.3556609",

language = "English",

volume = "158",

pages = "H471--H476",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

number = "5",

}

TY - JOUR

T1 - The phase change effect of oxygen-incorporation in GeSbTe films

AU - Jang, Moon Hyung

AU - Park, Seung Jong

AU - Lim, Dong Hyeok

AU - Park, Sung Jin

AU - Cho, Mann Ho

AU - Ko, Dae Hong

AU - Cho, Seong Jin

PY - 2011

Y1 - 2011

N2 - Reflectivity changes in oxygen-incorporated Ge2Sb 2Te5 (GST) films were investigated via a laser-induced crystallization process. The crystallization process showed that the phase change speed and the laser power required for crystallization become faster and larger in GST films with a characteristic quantity of oxygen. We confirmed that a dominant grain growth mode during the laser crystallization is a major determinant for the speed of phase change in GST films with a characteristic quantity of oxygen. JMA results and changes in surface morphology indicate that the origin of the growth mode change is due to an increase in the number of initial nucleation sites produced in the oxygen-incorporated GST films. After the re-amorphization process, oxygen-incorporated GST films show more rapid and more stable phase change properties than that of GST films.

AB - Reflectivity changes in oxygen-incorporated Ge2Sb 2Te5 (GST) films were investigated via a laser-induced crystallization process. The crystallization process showed that the phase change speed and the laser power required for crystallization become faster and larger in GST films with a characteristic quantity of oxygen. We confirmed that a dominant grain growth mode during the laser crystallization is a major determinant for the speed of phase change in GST films with a characteristic quantity of oxygen. JMA results and changes in surface morphology indicate that the origin of the growth mode change is due to an increase in the number of initial nucleation sites produced in the oxygen-incorporated GST films. After the re-amorphization process, oxygen-incorporated GST films show more rapid and more stable phase change properties than that of GST films.

UR - http://www.scopus.com/inward/record.url?scp=79953195543&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79953195543&partnerID=8YFLogxK

U2 - 10.1149/1.3556609

DO - 10.1149/1.3556609

M3 - Article

AN - SCOPUS:79953195543

VL - 158

SP - H471-H476

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 5

ER -