The phototransformation of C60 thin films on GaAs(100) studied by in situ Raman spectroscopy

S. Park, Haksoo Han, R. Kaiser, T. Werninghaus, A. Schneider, D. Drews, D. R.T. Zahn

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Raman spectra in the region of the pentagonal pinch mode Ag(2) of C60 were taken in situ during the deposition of C60 on the GaAs(100) surface at different temperatures. For very low coverages, only the feature corresponding to the pentagonal pinch mode of pristine C60 is visible. The onset of polymerization under laser irradiation occurred at thicknesses of about 15 nm which is attributed to a suppressive effect on the polymerization process due to the interaction of C60 with the substrate surface. The line shape for the feature due to photopolymerized C60 was different at each temperature indicating distinct polymeric states at different temperatures. These different states are discussed in comparison to recent theoretical calculations. Additionally, the photopolymerization due to irradiation after growth was investigated in situ.

Original languageEnglish
Pages (from-to)1340-1345
Number of pages6
JournalJournal of Applied Physics
Volume84
Issue number3
DOIs
Publication statusPublished - 1998 Aug 1

Fingerprint

Raman spectroscopy
polymerization
thin films
irradiation
temperature
line shape
Raman spectra
lasers
interactions

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Park, S., Han, H., Kaiser, R., Werninghaus, T., Schneider, A., Drews, D., & Zahn, D. R. T. (1998). The phototransformation of C60 thin films on GaAs(100) studied by in situ Raman spectroscopy. Journal of Applied Physics, 84(3), 1340-1345. https://doi.org/10.1063/1.368203
Park, S. ; Han, Haksoo ; Kaiser, R. ; Werninghaus, T. ; Schneider, A. ; Drews, D. ; Zahn, D. R.T. / The phototransformation of C60 thin films on GaAs(100) studied by in situ Raman spectroscopy. In: Journal of Applied Physics. 1998 ; Vol. 84, No. 3. pp. 1340-1345.
@article{e48d6d6646c1455d9750983b0e03cbfc,
title = "The phototransformation of C60 thin films on GaAs(100) studied by in situ Raman spectroscopy",
abstract = "Raman spectra in the region of the pentagonal pinch mode Ag(2) of C60 were taken in situ during the deposition of C60 on the GaAs(100) surface at different temperatures. For very low coverages, only the feature corresponding to the pentagonal pinch mode of pristine C60 is visible. The onset of polymerization under laser irradiation occurred at thicknesses of about 15 nm which is attributed to a suppressive effect on the polymerization process due to the interaction of C60 with the substrate surface. The line shape for the feature due to photopolymerized C60 was different at each temperature indicating distinct polymeric states at different temperatures. These different states are discussed in comparison to recent theoretical calculations. Additionally, the photopolymerization due to irradiation after growth was investigated in situ.",
author = "S. Park and Haksoo Han and R. Kaiser and T. Werninghaus and A. Schneider and D. Drews and Zahn, {D. R.T.}",
year = "1998",
month = "8",
day = "1",
doi = "10.1063/1.368203",
language = "English",
volume = "84",
pages = "1340--1345",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "3",

}

Park, S, Han, H, Kaiser, R, Werninghaus, T, Schneider, A, Drews, D & Zahn, DRT 1998, 'The phototransformation of C60 thin films on GaAs(100) studied by in situ Raman spectroscopy', Journal of Applied Physics, vol. 84, no. 3, pp. 1340-1345. https://doi.org/10.1063/1.368203

The phototransformation of C60 thin films on GaAs(100) studied by in situ Raman spectroscopy. / Park, S.; Han, Haksoo; Kaiser, R.; Werninghaus, T.; Schneider, A.; Drews, D.; Zahn, D. R.T.

In: Journal of Applied Physics, Vol. 84, No. 3, 01.08.1998, p. 1340-1345.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The phototransformation of C60 thin films on GaAs(100) studied by in situ Raman spectroscopy

AU - Park, S.

AU - Han, Haksoo

AU - Kaiser, R.

AU - Werninghaus, T.

AU - Schneider, A.

AU - Drews, D.

AU - Zahn, D. R.T.

PY - 1998/8/1

Y1 - 1998/8/1

N2 - Raman spectra in the region of the pentagonal pinch mode Ag(2) of C60 were taken in situ during the deposition of C60 on the GaAs(100) surface at different temperatures. For very low coverages, only the feature corresponding to the pentagonal pinch mode of pristine C60 is visible. The onset of polymerization under laser irradiation occurred at thicknesses of about 15 nm which is attributed to a suppressive effect on the polymerization process due to the interaction of C60 with the substrate surface. The line shape for the feature due to photopolymerized C60 was different at each temperature indicating distinct polymeric states at different temperatures. These different states are discussed in comparison to recent theoretical calculations. Additionally, the photopolymerization due to irradiation after growth was investigated in situ.

AB - Raman spectra in the region of the pentagonal pinch mode Ag(2) of C60 were taken in situ during the deposition of C60 on the GaAs(100) surface at different temperatures. For very low coverages, only the feature corresponding to the pentagonal pinch mode of pristine C60 is visible. The onset of polymerization under laser irradiation occurred at thicknesses of about 15 nm which is attributed to a suppressive effect on the polymerization process due to the interaction of C60 with the substrate surface. The line shape for the feature due to photopolymerized C60 was different at each temperature indicating distinct polymeric states at different temperatures. These different states are discussed in comparison to recent theoretical calculations. Additionally, the photopolymerization due to irradiation after growth was investigated in situ.

UR - http://www.scopus.com/inward/record.url?scp=0000972747&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000972747&partnerID=8YFLogxK

U2 - 10.1063/1.368203

DO - 10.1063/1.368203

M3 - Article

AN - SCOPUS:0000972747

VL - 84

SP - 1340

EP - 1345

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 3

ER -