The phototransformation of C60 thin films on GaAs(100) studied by in situ Raman spectroscopy

S. Park, H. Han, R. Kaiser, T. Werninghaus, A. Schneider, D. Drews, D. R.T. Zahn

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Abstract

Raman spectra in the region of the pentagonal pinch mode Ag(2) of C60 were taken in situ during the deposition of C60 on the GaAs(100) surface at different temperatures. For very low coverages, only the feature corresponding to the pentagonal pinch mode of pristine C60 is visible. The onset of polymerization under laser irradiation occurred at thicknesses of about 15 nm which is attributed to a suppressive effect on the polymerization process due to the interaction of C60 with the substrate surface. The line shape for the feature due to photopolymerized C60 was different at each temperature indicating distinct polymeric states at different temperatures. These different states are discussed in comparison to recent theoretical calculations. Additionally, the photopolymerization due to irradiation after growth was investigated in situ.

Original languageEnglish
Pages (from-to)1340-1345
Number of pages6
JournalJournal of Applied Physics
Volume84
Issue number3
DOIs
Publication statusPublished - 1998 Aug 1

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Park, S., Han, H., Kaiser, R., Werninghaus, T., Schneider, A., Drews, D., & Zahn, D. R. T. (1998). The phototransformation of C60 thin films on GaAs(100) studied by in situ Raman spectroscopy. Journal of Applied Physics, 84(3), 1340-1345. https://doi.org/10.1063/1.368203