The physical and electrical properties of polycrystalline Si 1-x Ge x as a gate electrode material for ULSI CMOS structures

Sung Kwan Kang, Dae Hong Ko, Tae Hang Ahn, Moon Sik Joo, In Seok Yeo, Sung Jin Whoang, Doo Young Yang, Chul Joo Whang, Hoo Jeong Lee

Research output: Contribution to journalArticle

Abstract

Poly Si 1-x Ge x films have been suggested as a promising alternative to the currently employed poly-Si gate electrode for CMOS technology due to lower resistivity, less boron penetration, and less gate depletion effect than those of poly Si gates. We investigated the formation of poly Si 1-x Ge x films grown by UHV CVD using Si 2 H 6 and GeH 4 gases, and studied their microstructures as well as their electrical characteristics. The Ge content of the Si 1-x Ge x films increased linearly with the flux of the GeH 4 gas up to x=0.3, and saturated above x=0.45. The deposition rate of the poly Si 1-x Ge x films increased linearly with the flux of the GeH 4 gas up to x=0.1, above which it is slightly changed. The resistivity of the Si 1-x Ge x films decreased as the Ge content increased, and was about one half of that of poly-Si films at the Ge content of 45%. The C-V measurements of the MOSCAP structures with poly Si 1-x Ge x gates demonstrated that the flat band voltage of the poly Si 1-x Ge x films was lower than that of poly-Si films by 0.2V.

Original languageEnglish
Pages (from-to)C711-C716
JournalMaterials Research Society Symposium - Proceedings
Volume611
DOIs
Publication statusPublished - 2001 Jan 1

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electrode materials
Polysilicon
CMOS
Electric properties
Physical properties
physical properties
electrical properties
Electrodes
Gases
gases
Fluxes
electrical resistivity
Boron
Deposition rates
depletion
boron
penetration
Chemical vapor deposition
vapor deposition
microstructure

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Kang, Sung Kwan ; Ko, Dae Hong ; Ahn, Tae Hang ; Joo, Moon Sik ; Yeo, In Seok ; Whoang, Sung Jin ; Yang, Doo Young ; Whang, Chul Joo ; Lee, Hoo Jeong. / The physical and electrical properties of polycrystalline Si 1-x Ge x as a gate electrode material for ULSI CMOS structures In: Materials Research Society Symposium - Proceedings. 2001 ; Vol. 611. pp. C711-C716.
@article{d505ef556cd04acbbd45c4f4ae5d0e2a,
title = "The physical and electrical properties of polycrystalline Si 1-x Ge x as a gate electrode material for ULSI CMOS structures",
abstract = "Poly Si 1-x Ge x films have been suggested as a promising alternative to the currently employed poly-Si gate electrode for CMOS technology due to lower resistivity, less boron penetration, and less gate depletion effect than those of poly Si gates. We investigated the formation of poly Si 1-x Ge x films grown by UHV CVD using Si 2 H 6 and GeH 4 gases, and studied their microstructures as well as their electrical characteristics. The Ge content of the Si 1-x Ge x films increased linearly with the flux of the GeH 4 gas up to x=0.3, and saturated above x=0.45. The deposition rate of the poly Si 1-x Ge x films increased linearly with the flux of the GeH 4 gas up to x=0.1, above which it is slightly changed. The resistivity of the Si 1-x Ge x films decreased as the Ge content increased, and was about one half of that of poly-Si films at the Ge content of 45{\%}. The C-V measurements of the MOSCAP structures with poly Si 1-x Ge x gates demonstrated that the flat band voltage of the poly Si 1-x Ge x films was lower than that of poly-Si films by 0.2V.",
author = "Kang, {Sung Kwan} and Ko, {Dae Hong} and Ahn, {Tae Hang} and Joo, {Moon Sik} and Yeo, {In Seok} and Whoang, {Sung Jin} and Yang, {Doo Young} and Whang, {Chul Joo} and Lee, {Hoo Jeong}",
year = "2001",
month = "1",
day = "1",
doi = "10.1557/PROC-611-C7.1.1",
language = "English",
volume = "611",
pages = "C711--C716",
journal = "Materials Research Society Symposium - Proceedings",
issn = "0272-9172",
publisher = "Materials Research Society",

}

The physical and electrical properties of polycrystalline Si 1-x Ge x as a gate electrode material for ULSI CMOS structures . / Kang, Sung Kwan; Ko, Dae Hong; Ahn, Tae Hang; Joo, Moon Sik; Yeo, In Seok; Whoang, Sung Jin; Yang, Doo Young; Whang, Chul Joo; Lee, Hoo Jeong.

In: Materials Research Society Symposium - Proceedings, Vol. 611, 01.01.2001, p. C711-C716.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The physical and electrical properties of polycrystalline Si 1-x Ge x as a gate electrode material for ULSI CMOS structures

AU - Kang, Sung Kwan

AU - Ko, Dae Hong

AU - Ahn, Tae Hang

AU - Joo, Moon Sik

AU - Yeo, In Seok

AU - Whoang, Sung Jin

AU - Yang, Doo Young

AU - Whang, Chul Joo

AU - Lee, Hoo Jeong

PY - 2001/1/1

Y1 - 2001/1/1

N2 - Poly Si 1-x Ge x films have been suggested as a promising alternative to the currently employed poly-Si gate electrode for CMOS technology due to lower resistivity, less boron penetration, and less gate depletion effect than those of poly Si gates. We investigated the formation of poly Si 1-x Ge x films grown by UHV CVD using Si 2 H 6 and GeH 4 gases, and studied their microstructures as well as their electrical characteristics. The Ge content of the Si 1-x Ge x films increased linearly with the flux of the GeH 4 gas up to x=0.3, and saturated above x=0.45. The deposition rate of the poly Si 1-x Ge x films increased linearly with the flux of the GeH 4 gas up to x=0.1, above which it is slightly changed. The resistivity of the Si 1-x Ge x films decreased as the Ge content increased, and was about one half of that of poly-Si films at the Ge content of 45%. The C-V measurements of the MOSCAP structures with poly Si 1-x Ge x gates demonstrated that the flat band voltage of the poly Si 1-x Ge x films was lower than that of poly-Si films by 0.2V.

AB - Poly Si 1-x Ge x films have been suggested as a promising alternative to the currently employed poly-Si gate electrode for CMOS technology due to lower resistivity, less boron penetration, and less gate depletion effect than those of poly Si gates. We investigated the formation of poly Si 1-x Ge x films grown by UHV CVD using Si 2 H 6 and GeH 4 gases, and studied their microstructures as well as their electrical characteristics. The Ge content of the Si 1-x Ge x films increased linearly with the flux of the GeH 4 gas up to x=0.3, and saturated above x=0.45. The deposition rate of the poly Si 1-x Ge x films increased linearly with the flux of the GeH 4 gas up to x=0.1, above which it is slightly changed. The resistivity of the Si 1-x Ge x films decreased as the Ge content increased, and was about one half of that of poly-Si films at the Ge content of 45%. The C-V measurements of the MOSCAP structures with poly Si 1-x Ge x gates demonstrated that the flat band voltage of the poly Si 1-x Ge x films was lower than that of poly-Si films by 0.2V.

UR - http://www.scopus.com/inward/record.url?scp=0035031479&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035031479&partnerID=8YFLogxK

U2 - 10.1557/PROC-611-C7.1.1

DO - 10.1557/PROC-611-C7.1.1

M3 - Article

VL - 611

SP - C711-C716

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

ER -