The real role of 4,4'-Bis[N-[4-{n,n-bis(3-methylphenyl)amino}phenyl]- nphenylamino] biphenyl (dntpd) hole injection layer in oled: Hole retardation and carrier balancing

Hyoung Yun Oh, Insun Yoo, Young Mi Lee, Jeong Won Kim, Yeonjin Yi, Seonghoon Lee

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We explored interfacial electronic structures in indium tin oxide (ITO)/DNTPD/N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB) layer stack in an OLED to clarify the real role of an aromatic amine-based hole injection layer, DNTPD. A hole injection barrier at the ITO/DNTPD interface is lowered by 0.20 eV but a new hole barrier of 0.36 eV at the DNTPD/NPB is created. The new barrier at the DNTPD/NPB interface and its higher bulk resistance serve as hole retardation, and thus those cause the operation voltage for the ITO/DNTPD/NPB to increase. However, it improves current efficiency through balancing holes and electrons in the emitting layer.

Original languageEnglish
Pages (from-to)929-932
Number of pages4
JournalBulletin of the Korean Chemical Society
Volume35
Issue number3
DOIs
Publication statusPublished - 2014 Mar 20

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Diamines
Organic light emitting diodes (OLED)
Electronic structure
Amines
diphenyl
4-nitrophenethyl bromide
Electrons
Electric potential
indium tin oxide

All Science Journal Classification (ASJC) codes

  • Chemistry(all)

Cite this

@article{24141c4d5a0340839448fd2f94ce32f0,
title = "The real role of 4,4'-Bis[N-[4-{n,n-bis(3-methylphenyl)amino}phenyl]- nphenylamino] biphenyl (dntpd) hole injection layer in oled: Hole retardation and carrier balancing",
abstract = "We explored interfacial electronic structures in indium tin oxide (ITO)/DNTPD/N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB) layer stack in an OLED to clarify the real role of an aromatic amine-based hole injection layer, DNTPD. A hole injection barrier at the ITO/DNTPD interface is lowered by 0.20 eV but a new hole barrier of 0.36 eV at the DNTPD/NPB is created. The new barrier at the DNTPD/NPB interface and its higher bulk resistance serve as hole retardation, and thus those cause the operation voltage for the ITO/DNTPD/NPB to increase. However, it improves current efficiency through balancing holes and electrons in the emitting layer.",
author = "Oh, {Hyoung Yun} and Insun Yoo and Lee, {Young Mi} and Kim, {Jeong Won} and Yeonjin Yi and Seonghoon Lee",
year = "2014",
month = "3",
day = "20",
doi = "10.5012/bkcs.2014.35.3.929",
language = "English",
volume = "35",
pages = "929--932",
journal = "Bulletin of the Korean Chemical Society",
issn = "0253-2964",
publisher = "Korean Chemical Society",
number = "3",

}

The real role of 4,4'-Bis[N-[4-{n,n-bis(3-methylphenyl)amino}phenyl]- nphenylamino] biphenyl (dntpd) hole injection layer in oled : Hole retardation and carrier balancing. / Oh, Hyoung Yun; Yoo, Insun; Lee, Young Mi; Kim, Jeong Won; Yi, Yeonjin; Lee, Seonghoon.

In: Bulletin of the Korean Chemical Society, Vol. 35, No. 3, 20.03.2014, p. 929-932.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The real role of 4,4'-Bis[N-[4-{n,n-bis(3-methylphenyl)amino}phenyl]- nphenylamino] biphenyl (dntpd) hole injection layer in oled

T2 - Hole retardation and carrier balancing

AU - Oh, Hyoung Yun

AU - Yoo, Insun

AU - Lee, Young Mi

AU - Kim, Jeong Won

AU - Yi, Yeonjin

AU - Lee, Seonghoon

PY - 2014/3/20

Y1 - 2014/3/20

N2 - We explored interfacial electronic structures in indium tin oxide (ITO)/DNTPD/N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB) layer stack in an OLED to clarify the real role of an aromatic amine-based hole injection layer, DNTPD. A hole injection barrier at the ITO/DNTPD interface is lowered by 0.20 eV but a new hole barrier of 0.36 eV at the DNTPD/NPB is created. The new barrier at the DNTPD/NPB interface and its higher bulk resistance serve as hole retardation, and thus those cause the operation voltage for the ITO/DNTPD/NPB to increase. However, it improves current efficiency through balancing holes and electrons in the emitting layer.

AB - We explored interfacial electronic structures in indium tin oxide (ITO)/DNTPD/N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB) layer stack in an OLED to clarify the real role of an aromatic amine-based hole injection layer, DNTPD. A hole injection barrier at the ITO/DNTPD interface is lowered by 0.20 eV but a new hole barrier of 0.36 eV at the DNTPD/NPB is created. The new barrier at the DNTPD/NPB interface and its higher bulk resistance serve as hole retardation, and thus those cause the operation voltage for the ITO/DNTPD/NPB to increase. However, it improves current efficiency through balancing holes and electrons in the emitting layer.

UR - http://www.scopus.com/inward/record.url?scp=84896515801&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84896515801&partnerID=8YFLogxK

U2 - 10.5012/bkcs.2014.35.3.929

DO - 10.5012/bkcs.2014.35.3.929

M3 - Article

AN - SCOPUS:84896515801

VL - 35

SP - 929

EP - 932

JO - Bulletin of the Korean Chemical Society

JF - Bulletin of the Korean Chemical Society

SN - 0253-2964

IS - 3

ER -