This study examined the threshold switching voltage (VT) of 150 nm thick SiO2 doped Ge2 Sb2 Te5 (SGST) films for phase change random access memory applications. The V T of the SGST films increased from ∼0.9 V (for GST) to ∼1.5 V with increasing SiO2 content. The optical band gap and Urbach edge of the SGST films were similar regardless of the SiO2 concentration. The dielectric constant decreased by ∼37% and the electrical resistivity increased by ∼19%. The increase in VT of SGST films is associated with an effective increase in electric field and the decreased generation rate caused by impact ionization.
|Journal||Applied Physics Letters|
|Publication status||Published - 2009|
Bibliographical noteFunding Information:
The authors acknowledge the support by the National Program for 0.1 Terabit NVM Devices of the Korean Government, World Class University program through National Research Foundation of Korea funded by the Ministry of Education, Science and Technology (R31-2008-000-10075-0) and Hynix company.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)