The reason for the increased threshold switching voltage of SiO2 doped Ge2 Sb2 Te5 thin films for phase change random access memory

Seung Wook Ryu; Jong Ho Lee; Young Bae Ahn; Choon Hwan Kim; Bong Seob Yang; Gun Hwan Kim; Soo Gil Kim; Se Ho Lee; Cheol Seong Hwang; Hyeong Joon Kim

doi:10.1063/1.3232237

The reason for the increased threshold switching voltage of SiO₂ doped Ge₂ Sb₂ Te₅ thin films for phase change random access memory

Seung Wook Ryu, Jong Ho Lee, Young Bae Ahn, Choon Hwan Kim, Bong Seob Yang, Gun Hwan Kim, Soo Gil Kim, Se Ho Lee, Cheol Seong Hwang, Hyeong Joon Kim

School of System & Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

This study examined the threshold switching voltage (V_T) of 150 nm thick SiO₂ doped Ge₂ Sb₂ Te₅ (SGST) films for phase change random access memory applications. The V _T of the SGST films increased from ∼0.9 V (for GST) to ∼1.5 V with increasing SiO₂ content. The optical band gap and Urbach edge of the SGST films were similar regardless of the SiO₂ concentration. The dielectric constant decreased by ∼37% and the electrical resistivity increased by ∼19%. The increase in V_T of SGST films is associated with an effective increase in electric field and the decreased generation rate caused by impact ionization.

Original language	English
Article number	112110
Journal	Applied Physics Letters
Volume	95
Issue number	11
DOIs	https://doi.org/10.1063/1.3232237
Publication status	Published - 2009

Bibliographical note

Funding Information:
The authors acknowledge the support by the National Program for 0.1 Terabit NVM Devices of the Korean Government, World Class University program through National Research Foundation of Korea funded by the Ministry of Education, Science and Technology (R31-2008-000-10075-0) and Hynix company.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3232237

Cite this

@article{34dd2783a79d464ba6668d8b5efc016d,

title = "The reason for the increased threshold switching voltage of SiO2 doped Ge2 Sb2 Te5 thin films for phase change random access memory",

abstract = "This study examined the threshold switching voltage (VT) of 150 nm thick SiO2 doped Ge2 Sb2 Te5 (SGST) films for phase change random access memory applications. The V T of the SGST films increased from ∼0.9 V (for GST) to ∼1.5 V with increasing SiO2 content. The optical band gap and Urbach edge of the SGST films were similar regardless of the SiO2 concentration. The dielectric constant decreased by ∼37% and the electrical resistivity increased by ∼19%. The increase in VT of SGST films is associated with an effective increase in electric field and the decreased generation rate caused by impact ionization.",

author = "Ryu, {Seung Wook} and Lee, {Jong Ho} and Ahn, {Young Bae} and Kim, {Choon Hwan} and Yang, {Bong Seob} and Kim, {Gun Hwan} and Kim, {Soo Gil} and Lee, {Se Ho} and Hwang, {Cheol Seong} and Kim, {Hyeong Joon}",

note = "Funding Information: The authors acknowledge the support by the National Program for 0.1 Terabit NVM Devices of the Korean Government, World Class University program through National Research Foundation of Korea funded by the Ministry of Education, Science and Technology (R31-2008-000-10075-0) and Hynix company.",

year = "2009",

doi = "10.1063/1.3232237",

language = "English",

volume = "95",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics Publising LLC",

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T1 - The reason for the increased threshold switching voltage of SiO2 doped Ge2 Sb2 Te5 thin films for phase change random access memory

AU - Ryu, Seung Wook

AU - Lee, Jong Ho

AU - Ahn, Young Bae

AU - Kim, Choon Hwan

AU - Yang, Bong Seob

AU - Kim, Gun Hwan

AU - Kim, Soo Gil

AU - Lee, Se Ho

AU - Hwang, Cheol Seong

AU - Kim, Hyeong Joon

N1 - Funding Information: The authors acknowledge the support by the National Program for 0.1 Terabit NVM Devices of the Korean Government, World Class University program through National Research Foundation of Korea funded by the Ministry of Education, Science and Technology (R31-2008-000-10075-0) and Hynix company.

PY - 2009

Y1 - 2009

N2 - This study examined the threshold switching voltage (VT) of 150 nm thick SiO2 doped Ge2 Sb2 Te5 (SGST) films for phase change random access memory applications. The V T of the SGST films increased from ∼0.9 V (for GST) to ∼1.5 V with increasing SiO2 content. The optical band gap and Urbach edge of the SGST films were similar regardless of the SiO2 concentration. The dielectric constant decreased by ∼37% and the electrical resistivity increased by ∼19%. The increase in VT of SGST films is associated with an effective increase in electric field and the decreased generation rate caused by impact ionization.

AB - This study examined the threshold switching voltage (VT) of 150 nm thick SiO2 doped Ge2 Sb2 Te5 (SGST) films for phase change random access memory applications. The V T of the SGST films increased from ∼0.9 V (for GST) to ∼1.5 V with increasing SiO2 content. The optical band gap and Urbach edge of the SGST films were similar regardless of the SiO2 concentration. The dielectric constant decreased by ∼37% and the electrical resistivity increased by ∼19%. The increase in VT of SGST films is associated with an effective increase in electric field and the decreased generation rate caused by impact ionization.

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