The reduction of effective doping with extra dopant: N-Type doping of tris(8-hydroxyquinoline) aluminum with K

Hyunbok Lee; Sang Wan Cho; Jeihyun Lee; Pyung Eun Jeon; Kwangho Jeong; Jin Woo Lee; Yeonjin Yi

doi:10.1063/1.3686704

The reduction of effective doping with extra dopant: N-Type doping of tris(8-hydroxyquinoline) aluminum with K

Hyunbok Lee, Sang Wan Cho, Jeihyun Lee, Pyung Eun Jeon, Kwangho Jeong, Jin Woo Lee, Yeonjin Yi

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

We studied the n-type doping effect of K deposited on tris(8- hydroxyquinoline) aluminum (Alq ₃), which has been used for efficient organic semiconducting devices for the last decade. The K doped or inserted at the interface region of the Alq ₃/cathode has shown highly enhanced device characteristics and yet, peculiarly, extra doping of K has always deteriorated the device properties. We study the interfacial electronic structures of the Alq ₃-K system using in situ photoemission spectroscopy and a theoretical model to understand the origin of such deterioration. As the K doping progresses, the lowest unoccupied molecular orbital (LUMO) of pristine Alq ₃ is gradually filled and it becomes an occupied gap state. This reduction of LUMO density of states makes the electron injection diminished, which is the origin of the device deterioration.

Original language	English
Article number	043712
Journal	Journal of Applied Physics
Volume	111
Issue number	4
DOIs	https://doi.org/10.1063/1.3686704
Publication status	Published - 2012 Feb 15

Bibliographical note

Funding Information:
This work was supported by Brain Korea 21 (BK21) project of the ministry of Education, Science and Technology and by a research project of the National Research Foundation of Korea (Grant No. 2011-0004748).

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.3686704

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title = "The reduction of effective doping with extra dopant: N-Type doping of tris(8-hydroxyquinoline) aluminum with K",

abstract = "We studied the n-type doping effect of K deposited on tris(8- hydroxyquinoline) aluminum (Alq 3), which has been used for efficient organic semiconducting devices for the last decade. The K doped or inserted at the interface region of the Alq 3/cathode has shown highly enhanced device characteristics and yet, peculiarly, extra doping of K has always deteriorated the device properties. We study the interfacial electronic structures of the Alq 3-K system using in situ photoemission spectroscopy and a theoretical model to understand the origin of such deterioration. As the K doping progresses, the lowest unoccupied molecular orbital (LUMO) of pristine Alq 3 is gradually filled and it becomes an occupied gap state. This reduction of LUMO density of states makes the electron injection diminished, which is the origin of the device deterioration.",

author = "Hyunbok Lee and Cho, {Sang Wan} and Jeihyun Lee and Jeon, {Pyung Eun} and Kwangho Jeong and Lee, {Jin Woo} and Yeonjin Yi",

note = "Funding Information: This work was supported by Brain Korea 21 (BK21) project of the ministry of Education, Science and Technology and by a research project of the National Research Foundation of Korea (Grant No. 2011-0004748).",

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doi = "10.1063/1.3686704",

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AU - Lee, Hyunbok

AU - Cho, Sang Wan

AU - Lee, Jeihyun

AU - Jeon, Pyung Eun

AU - Jeong, Kwangho

AU - Lee, Jin Woo

AU - Yi, Yeonjin

N1 - Funding Information: This work was supported by Brain Korea 21 (BK21) project of the ministry of Education, Science and Technology and by a research project of the National Research Foundation of Korea (Grant No. 2011-0004748).

PY - 2012/2/15

Y1 - 2012/2/15

N2 - We studied the n-type doping effect of K deposited on tris(8- hydroxyquinoline) aluminum (Alq 3), which has been used for efficient organic semiconducting devices for the last decade. The K doped or inserted at the interface region of the Alq 3/cathode has shown highly enhanced device characteristics and yet, peculiarly, extra doping of K has always deteriorated the device properties. We study the interfacial electronic structures of the Alq 3-K system using in situ photoemission spectroscopy and a theoretical model to understand the origin of such deterioration. As the K doping progresses, the lowest unoccupied molecular orbital (LUMO) of pristine Alq 3 is gradually filled and it becomes an occupied gap state. This reduction of LUMO density of states makes the electron injection diminished, which is the origin of the device deterioration.

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The reduction of effective doping with extra dopant: N-Type doping of tris(8-hydroxyquinoline) aluminum with K

Abstract

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