The role of an SiC interlayer at a graphite–silicon liquid interface in the solution growth of SiC crystals

Ji Eun Lee, Byeong Geun Kim, Ji Young Yoon, Minh Tan Ha, Myung Hyun Lee, Younghee Kim, Won Seon Seo, Heon-Jin Choi, Won Jae Lee, Seong Min Jeong

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SiC crystal growth using the top seeded solution growth (TSSG) method involves the precipitation of solid SiC from carbon that is dissolved in a silicon melt. The growth rate of SiC is strongly influenced by the solubility of C in liquid Si, which is quite low. In this study, the dissolution of C from graphite to the Si melt was explored by observing the formation of an SiC interlayer at a graphite – Si liquid interface. The SiC interlayer was observed to become thickened during the several hours needed to reach a certain thickness at 1500 °C. Assuming that the SiC interlayer is a direct C source, a pre-formed SiC layer was coated on the graphite crucible to evaluate its effect on the concentration of C in the Si melt. As a result, the concentration of C in the Si melt increased within a short time, especially at low temperatures. By applying the SiC coated crucible to the TSSG process for SiC crystal growth, we confirmed that the development of a pre-formed SiC layer enhanced the growth rate of SiC crystals, especially at the initial stage of crystal growth at low temperatures.

Original languageEnglish
Pages (from-to)11611-11618
Number of pages8
JournalCeramics International
Issue number10
Publication statusPublished - 2016 Aug 1


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Lee, J. E., Kim, B. G., Yoon, J. Y., Ha, M. T., Lee, M. H., Kim, Y., Seo, W. S., Choi, H-J., Lee, W. J., & Jeong, S. M. (2016). The role of an SiC interlayer at a graphite–silicon liquid interface in the solution growth of SiC crystals. Ceramics International, 42(10), 11611-11618.