The role of Ar plasma treatment in generating oxygen vacancies in indium tin oxide thin films prepared by the sol-gel process

Deuk Kyu Hwang, Mirnmoy Misra, Ye Eun Lee, Sung Doo Baek, Jae Min Myoung, Tae Il Lee

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Argon (Ar) plasma treatment was carried out to reduce the sheet resistance of indium tin oxide (ITO) thin films. The Ar plasma treatment did not cause any significant changes to the crystal structure, surface morphology, or optical properties of the ITO thin films. However, an X-ray photoelectron spectroscopy study confirmed that the concentration of oxygen vacancies in the film dramatically increased with the plasma treatment time. Thus, we concluded that the decrease in the sheet resistance was caused by the increase in the oxygen vacancy concentration in the film. Furthermore, to verify how the concentration of oxygen vacancies in the film increased with the Ar plasma treatment time, cumulative and continuous plasma treatments were conducted. The oxygen vacancies were found to be created by surface heating via the outward thermal diffusion of oxygen atoms from inside the film.

Original languageEnglish
Pages (from-to)344-349
Number of pages6
JournalApplied Surface Science
Volume405
DOIs
Publication statusPublished - 2017 May 31

Fingerprint

Argon
Oxygen vacancies
Tin oxides
Indium
Sol-gel process
Oxide films
Plasmas
Thin films
Sheet resistance
Thermal diffusion
Surface morphology
X ray photoelectron spectroscopy
Optical properties
Crystal structure
indium tin oxide
Oxygen
Heating
Atoms

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Hwang, Deuk Kyu ; Misra, Mirnmoy ; Lee, Ye Eun ; Baek, Sung Doo ; Myoung, Jae Min ; Lee, Tae Il. / The role of Ar plasma treatment in generating oxygen vacancies in indium tin oxide thin films prepared by the sol-gel process. In: Applied Surface Science. 2017 ; Vol. 405. pp. 344-349.
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The role of Ar plasma treatment in generating oxygen vacancies in indium tin oxide thin films prepared by the sol-gel process. / Hwang, Deuk Kyu; Misra, Mirnmoy; Lee, Ye Eun; Baek, Sung Doo; Myoung, Jae Min; Lee, Tae Il.

In: Applied Surface Science, Vol. 405, 31.05.2017, p. 344-349.

Research output: Contribution to journalArticle

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AU - Lee, Tae Il

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AB - Argon (Ar) plasma treatment was carried out to reduce the sheet resistance of indium tin oxide (ITO) thin films. The Ar plasma treatment did not cause any significant changes to the crystal structure, surface morphology, or optical properties of the ITO thin films. However, an X-ray photoelectron spectroscopy study confirmed that the concentration of oxygen vacancies in the film dramatically increased with the plasma treatment time. Thus, we concluded that the decrease in the sheet resistance was caused by the increase in the oxygen vacancy concentration in the film. Furthermore, to verify how the concentration of oxygen vacancies in the film increased with the Ar plasma treatment time, cumulative and continuous plasma treatments were conducted. The oxygen vacancies were found to be created by surface heating via the outward thermal diffusion of oxygen atoms from inside the film.

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