The role of GaN/AlN double buffer layer in the crystal growth and photoluminescence of GaN nanowires

Heon Jin Choi, Dae Hee Kim, Tae Geun Kim, Yun Mo Sung

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Vapor-liquid-solid (VLS) growth of GaN nanowires was performed and GaN/AlN double buffer layer was employed to minimize the lattice mismatch between GaN nanowires and Si substrates. GaN nanowires grown on GaN/AlN/Si substrates showed the formation of straight nanowires with ∼50-100 nm diameter, while those grown on bare Si wafers showed formation of tangled nanowires with non-uniform diameters. High-resolution transmission electron microscopy (HRTEM) analyses on the GaN nanowires grown on GaN/AlN/Si showed high crystallinity with [1 0 -1] crystal growth direction. Furthermore, GaN nanowires grown on GaN/AlN/Si showed high intensity blue emission and almost negligible yellow luminescence.

Original languageEnglish
Pages (from-to)479-483
Number of pages5
JournalChemical Physics Letters
Volume413
Issue number4-6
DOIs
Publication statusPublished - 2005 Sep 26

Fingerprint

Buffer layers
Crystallization
Nanowires
crystal growth
Photoluminescence
nanowires
buffers
photoluminescence
Lattice mismatch
Substrates
High resolution transmission electron microscopy
Luminescence
crystallinity
Vapors
wafers
vapors
luminescence
transmission electron microscopy
high resolution
Liquids

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

Cite this

Choi, Heon Jin ; Kim, Dae Hee ; Kim, Tae Geun ; Sung, Yun Mo. / The role of GaN/AlN double buffer layer in the crystal growth and photoluminescence of GaN nanowires. In: Chemical Physics Letters. 2005 ; Vol. 413, No. 4-6. pp. 479-483.
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The role of GaN/AlN double buffer layer in the crystal growth and photoluminescence of GaN nanowires. / Choi, Heon Jin; Kim, Dae Hee; Kim, Tae Geun; Sung, Yun Mo.

In: Chemical Physics Letters, Vol. 413, No. 4-6, 26.09.2005, p. 479-483.

Research output: Contribution to journalArticle

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AU - Kim, Dae Hee

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AB - Vapor-liquid-solid (VLS) growth of GaN nanowires was performed and GaN/AlN double buffer layer was employed to minimize the lattice mismatch between GaN nanowires and Si substrates. GaN nanowires grown on GaN/AlN/Si substrates showed the formation of straight nanowires with ∼50-100 nm diameter, while those grown on bare Si wafers showed formation of tangled nanowires with non-uniform diameters. High-resolution transmission electron microscopy (HRTEM) analyses on the GaN nanowires grown on GaN/AlN/Si showed high crystallinity with [1 0 -1] crystal growth direction. Furthermore, GaN nanowires grown on GaN/AlN/Si showed high intensity blue emission and almost negligible yellow luminescence.

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