The simulation of copper drift in SiO2 during bias temperature stress (BTS) test

Jang Yeon Kwon, Ki Su Kim, Young Chang Joo, Ki Bum Kim

Research output: Contribution to journalConference article

Abstract

In order to develop a reliable interconnect integration scheme by using Cu in ultra large scale integrated devices (ULSI), the evolutions of the concentration profile of copper ions in SiO2 was simulated under bias temperature stress (BTS) test. Diffusion equation was solved numerically in two electric field modes. One is constant electric field mode where copper drift was simulated with the assumption that electric field is constant within SiO2 film. In variable electric field mode, simulation was carried out considering the variation of electric field in SiO2 due to copper ions. The diffusion of copper ions in variable electric field mode is slower than that in constant electric field mode, because copper ions in SiO2 reduce electric field near the interface between Cu and SiO2. Flatband voltage shift (ΔVFB,) increases parabolically as BTS time increases in constant electric field mode. However, it has linear relation with BTS time in variable electric field mode, which is typically observed in experiments.

Original languageEnglish
Pages (from-to)129-134
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume731
Publication statusPublished - 2002 Jan 1

Fingerprint

Copper
Electric fields
copper
electric fields
simulation
Temperature
temperature
Ions
ions
shift
Electric potential
electric potential
profiles

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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title = "The simulation of copper drift in SiO2 during bias temperature stress (BTS) test",
abstract = "In order to develop a reliable interconnect integration scheme by using Cu in ultra large scale integrated devices (ULSI), the evolutions of the concentration profile of copper ions in SiO2 was simulated under bias temperature stress (BTS) test. Diffusion equation was solved numerically in two electric field modes. One is constant electric field mode where copper drift was simulated with the assumption that electric field is constant within SiO2 film. In variable electric field mode, simulation was carried out considering the variation of electric field in SiO2 due to copper ions. The diffusion of copper ions in variable electric field mode is slower than that in constant electric field mode, because copper ions in SiO2 reduce electric field near the interface between Cu and SiO2. Flatband voltage shift (ΔVFB,) increases parabolically as BTS time increases in constant electric field mode. However, it has linear relation with BTS time in variable electric field mode, which is typically observed in experiments.",
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The simulation of copper drift in SiO2 during bias temperature stress (BTS) test. / Kwon, Jang Yeon; Kim, Ki Su; Joo, Young Chang; Kim, Ki Bum.

In: Materials Research Society Symposium - Proceedings, Vol. 731, 01.01.2002, p. 129-134.

Research output: Contribution to journalConference article

TY - JOUR

T1 - The simulation of copper drift in SiO2 during bias temperature stress (BTS) test

AU - Kwon, Jang Yeon

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AB - In order to develop a reliable interconnect integration scheme by using Cu in ultra large scale integrated devices (ULSI), the evolutions of the concentration profile of copper ions in SiO2 was simulated under bias temperature stress (BTS) test. Diffusion equation was solved numerically in two electric field modes. One is constant electric field mode where copper drift was simulated with the assumption that electric field is constant within SiO2 film. In variable electric field mode, simulation was carried out considering the variation of electric field in SiO2 due to copper ions. The diffusion of copper ions in variable electric field mode is slower than that in constant electric field mode, because copper ions in SiO2 reduce electric field near the interface between Cu and SiO2. Flatband voltage shift (ΔVFB,) increases parabolically as BTS time increases in constant electric field mode. However, it has linear relation with BTS time in variable electric field mode, which is typically observed in experiments.

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