The sodium ion-assisted memory behaviour of a silicon nanowire partial composite field-effect transistor

Kyeong Ju Moon, Tae Il Lee, Sang Hoon Lee, Jae Min Myoung

Research output: Contribution to journalArticle

Abstract

A partial composite consisting of rough silicon nanowires and a polymer dielectric layer with sufficient Na+ ions was used to create a field-effect transistor based memory device. Addition of Na+ ions helped compensate for water molecule trapped charges leading to narrow hysteresis characteristics and stable memory retention stability of the resulting device. This journal is

Original languageEnglish
Pages (from-to)4112-4114
Number of pages3
JournalChemical Communications
Volume50
Issue number31
DOIs
Publication statusPublished - 2014 Apr 21

Fingerprint

Silicon
Field effect transistors
Nanowires
Sodium
Ions
Data storage equipment
Composite materials
Hysteresis
Polymers
Molecules
Water

All Science Journal Classification (ASJC) codes

  • Catalysis
  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Chemistry(all)
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

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The sodium ion-assisted memory behaviour of a silicon nanowire partial composite field-effect transistor. / Moon, Kyeong Ju; Lee, Tae Il; Lee, Sang Hoon; Myoung, Jae Min.

In: Chemical Communications, Vol. 50, No. 31, 21.04.2014, p. 4112-4114.

Research output: Contribution to journalArticle

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