The stability of oxide TFTs under electrical gate bias and monochromatic light illumination

Soo Yeon Lee, Sun Jae Kim, Young Wook Lee, Sang Geun Park, Jang Yeon Kwon, Min Koo Han

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

We have investigated a stability of oxide TFTs (IGZO) under electrical bias and monochromatic light illumination. Under -20 V gate bias, when 650 nm monochromatic illumination with intensity of 1 mW/cm2 was radiated, threshold voltage (Vth) was shifted by about -1.55 V while V th was almost constant without illumination. Even though the photon energy of 650 nm is much smaller than optical band gap of oxide active layer (Eopt∼3.0 eV), Vth was changed due to generation of carriers through localized state. However, under positive gate bias of 20 V, Vth was not changed with and without 650 nm light illumination. In terms of 300 nm wavelength light, Vth was shifted positively under negative bias stress and negatively under positive bias stress. It is considered that light affected not only the active layer but also the gate insulator layer.

Original languageEnglish
Title of host publicationThin Film Transistors 10, TFT 10
Pages313-318
Number of pages6
Edition5
DOIs
Publication statusPublished - 2010 Dec 1
Event10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting - Las Vegas, NV, United States
Duration: 2010 Oct 112010 Oct 15

Publication series

NameECS Transactions
Number5
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period10/10/1110/10/15

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • Cite this

    Lee, S. Y., Kim, S. J., Lee, Y. W., Park, S. G., Kwon, J. Y., & Han, M. K. (2010). The stability of oxide TFTs under electrical gate bias and monochromatic light illumination. In Thin Film Transistors 10, TFT 10 (5 ed., pp. 313-318). (ECS Transactions; Vol. 33, No. 5). https://doi.org/10.1149/1.3481252