The study of dielectric constant change of a-SiC:H films deposited by remote PECVD with low deposition temperatures

Sung Hyuk Cho; Doo Jin Choi

doi:10.3938/jkps.55.1920

The study of dielectric constant change of a-SiC:H films deposited by remote PECVD with low deposition temperatures

Sung Hyuk Cho, Doo Jin Choi

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

a-SiOC:H films were deposited by using a remote Plasma Enhanced Chemical Vapor Deposition (PECVD) system with HMDS (Hexamethyldisilane) as a precursor. The H2 gas and the C2H2 gas were used as carrier gas and dilution gas, respectively. The flow rate of C2H2 gas was fixed at 3 seem. The deposition temperature was varied between 100° to 200° to study the effect of temperature on the film stoichiometry and bonding properties, which can affect changes in the dielectric constant of the deposited films. A Rapid Thermal Annealing (RTA) treatment was conducted to determine the thermal stability and any changes in the dielectric constant. A change in carbon hybridization bonds caused by different deposition temperatures played an important role in the changes in the dielectric constant.

Original language	English
Pages (from-to)	1920-1924
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	55
Issue number	5 PART 1
DOIs	https://doi.org/10.3938/jkps.55.1920
Publication status	Published - 2009 Nov

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.3938/jkps.55.1920

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@article{239eb91b732542b38faafb5b2a8741f0,

title = "The study of dielectric constant change of a-SiC:H films deposited by remote PECVD with low deposition temperatures",

abstract = "a-SiOC:H films were deposited by using a remote Plasma Enhanced Chemical Vapor Deposition (PECVD) system with HMDS (Hexamethyldisilane) as a precursor. The H2 gas and the C2H2 gas were used as carrier gas and dilution gas, respectively. The flow rate of C2H2 gas was fixed at 3 seem. The deposition temperature was varied between 100° to 200° to study the effect of temperature on the film stoichiometry and bonding properties, which can affect changes in the dielectric constant of the deposited films. A Rapid Thermal Annealing (RTA) treatment was conducted to determine the thermal stability and any changes in the dielectric constant. A change in carbon hybridization bonds caused by different deposition temperatures played an important role in the changes in the dielectric constant.",

author = "Cho, {Sung Hyuk} and Choi, {Doo Jin}",

year = "2009",

month = nov,

doi = "10.3938/jkps.55.1920",

language = "English",

volume = "55",

pages = "1920--1924",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "5 PART 1",

}

TY - JOUR

T1 - The study of dielectric constant change of a-SiC:H films deposited by remote PECVD with low deposition temperatures

AU - Cho, Sung Hyuk

AU - Choi, Doo Jin

PY - 2009/11

Y1 - 2009/11

N2 - a-SiOC:H films were deposited by using a remote Plasma Enhanced Chemical Vapor Deposition (PECVD) system with HMDS (Hexamethyldisilane) as a precursor. The H2 gas and the C2H2 gas were used as carrier gas and dilution gas, respectively. The flow rate of C2H2 gas was fixed at 3 seem. The deposition temperature was varied between 100° to 200° to study the effect of temperature on the film stoichiometry and bonding properties, which can affect changes in the dielectric constant of the deposited films. A Rapid Thermal Annealing (RTA) treatment was conducted to determine the thermal stability and any changes in the dielectric constant. A change in carbon hybridization bonds caused by different deposition temperatures played an important role in the changes in the dielectric constant.

AB - a-SiOC:H films were deposited by using a remote Plasma Enhanced Chemical Vapor Deposition (PECVD) system with HMDS (Hexamethyldisilane) as a precursor. The H2 gas and the C2H2 gas were used as carrier gas and dilution gas, respectively. The flow rate of C2H2 gas was fixed at 3 seem. The deposition temperature was varied between 100° to 200° to study the effect of temperature on the film stoichiometry and bonding properties, which can affect changes in the dielectric constant of the deposited films. A Rapid Thermal Annealing (RTA) treatment was conducted to determine the thermal stability and any changes in the dielectric constant. A change in carbon hybridization bonds caused by different deposition temperatures played an important role in the changes in the dielectric constant.

UR - http://www.scopus.com/inward/record.url?scp=73249117160&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=73249117160&partnerID=8YFLogxK

U2 - 10.3938/jkps.55.1920

DO - 10.3938/jkps.55.1920

M3 - Article

AN - SCOPUS:73249117160

VL - 55

SP - 1920

EP - 1924

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - 5 PART 1

ER -