The study of dielectric constant change of a-SiC:H films deposited by remote PECVD with low deposition temperatures

Sung Hyuk Cho, Doo Jin Choi

Research output: Contribution to journalArticle

4 Citations (Scopus)


a-SiOC:H films were deposited by using a remote Plasma Enhanced Chemical Vapor Deposition (PECVD) system with HMDS (Hexamethyldisilane) as a precursor. The H2 gas and the C2H2 gas were used as carrier gas and dilution gas, respectively. The flow rate of C2H2 gas was fixed at 3 seem. The deposition temperature was varied between 100° to 200° to study the effect of temperature on the film stoichiometry and bonding properties, which can affect changes in the dielectric constant of the deposited films. A Rapid Thermal Annealing (RTA) treatment was conducted to determine the thermal stability and any changes in the dielectric constant. A change in carbon hybridization bonds caused by different deposition temperatures played an important role in the changes in the dielectric constant.

Original languageEnglish
Pages (from-to)1920-1924
Number of pages5
JournalJournal of the Korean Physical Society
Issue number5 PART 1
Publication statusPublished - 2009 Nov 1


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this