The study of hafnium silicate by NO gas annealing treatment

Dong Chan Suh, Dongwon Lee, Kwun Bum Chung, Mann Ho Cho, Dae Hong Ko

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The physical and electrical properties of nitrided Hf-silicate films, incorporated by NO gas annealing, were investigated by XPS, NEXAFS, TEM and C-V measurement. We confirmed the nitrogen incorporation during NO gas annealing treatment effectively enhances the thermal stability of Hf-silicate. The suppression of phase separation was observed in Hf-silicate films with high nitrogen contents. The negative shift of threshold voltage is caused by the incorporation of nitrogen in the hafnium silicate films.

Original languageEnglish
Title of host publicationECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS
Subtitle of host publicationNew Materials, Processes and Equipment, 3
Pages129-139
Number of pages11
Edition1
DOIs
Publication statusPublished - 2007 Dec 1
EventInternational Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3 - 211th ECS Meeting - Chicago, IL, United States
Duration: 2007 May 62007 May 10

Publication series

NameECS Transactions
Number1
Volume6
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherInternational Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3 - 211th ECS Meeting
CountryUnited States
CityChicago, IL
Period07/5/607/5/10

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Suh, D. C., Lee, D., Chung, K. B., Cho, M. H., & Ko, D. H. (2007). The study of hafnium silicate by NO gas annealing treatment. In ECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3 (1 ed., pp. 129-139). (ECS Transactions; Vol. 6, No. 1). https://doi.org/10.1149/1.2727396