The study of hafnium silicate by various nitrogen gas annealing treatment

Chan Suh Dong, Bum Chung Kwun, Mann Ho Cho, Dae Cho Young, Dae Hong Ko

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Post annealing of Hf-silicate thin film grown by ALD was done with different kind of nitrogen gas and order of annealing. Annealing conditions are as follows: (1) NO gas only, (2) NH3 gas only, (3) NO gas + NH 3 gas, and (4) NH3 + NO gas. With these conditions, the physical and electrical properties of nitrided Hf-silicate films were analyzed. Content of nitrogen is decreased with post NO gas annealing, In case of NH 3, content of nitrogen is much higher than NO case. Most nitrogen atoms were distributed between Si substrate and Hf-silicate film for NO gas annealing. However, with NH3 gas annealing, nitrogen atoms were distributed in the whole Hf-silicate film evenly. Leakage current was decreased with post NO gas annealing and flat band voltage was also decreased.

Original languageEnglish
Title of host publicationMaterials Science of High-K Dielectric Stacks - From Fundamentals to Technology
Pages68-72
Number of pages5
Publication statusPublished - 2008 Dec 1
Event2008 MRS Spring Meeting - San Francisco, CA, United States
Duration: 2008 Mar 242008 Mar 28

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1073
ISSN (Print)0272-9172

Other

Other2008 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period08/3/2408/3/28

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Dong, C. S., Kwun, B. C., Cho, M. H., Young, D. C., & Ko, D. H. (2008). The study of hafnium silicate by various nitrogen gas annealing treatment. In Materials Science of High-K Dielectric Stacks - From Fundamentals to Technology (pp. 68-72). (Materials Research Society Symposium Proceedings; Vol. 1073).