The study of workfunction measurement method for bilayer metal gate electrode using XPS

E. J. Jung, C. J. Yim, I. S. Yang, H. J. Chang, S. W. Cho, M. H. Cho, D. H. Ko

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

An Al-Ti bi-layer was deposited by D.C. magnetron sputtering and annealed by RTA at 500°C 10s in an N2 ambient. After RTA, the Al 3Ti alloy layer was formed at the Al/Ti interface. The XPS/UPS depth-profile was performed in other to measure workfunction. The workfunctíon of AL3Ti layer is measured to be about 4.67 eV.

Original languageEnglish
Title of host publicationECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4
Subtitle of host publicationNew Materials, Processes, and Equipment
Pages187-191
Number of pages5
Edition1
DOIs
Publication statusPublished - 2008 Nov 13
EventAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 4 - Phoenix, AZ, United States
Duration: 2008 May 182008 May 22

Publication series

NameECS Transactions
Number1
Volume13
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 4
CountryUnited States
CityPhoenix, AZ
Period08/5/1808/5/22

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Jung, E. J., Yim, C. J., Yang, I. S., Chang, H. J., Cho, S. W., Cho, M. H., & Ko, D. H. (2008). The study of workfunction measurement method for bilayer metal gate electrode using XPS. In ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment (1 ed., pp. 187-191). (ECS Transactions; Vol. 13, No. 1). https://doi.org/10.1149/1.2911499