The suppression of Coulomb oscillation in a normal-ferromagnet-normal metal single-electron transistor

Jinhee Kim; Sangchul Oh; Ju Jin Kim; Jeong O. Lee; Jong Wan Park; Kyung Hwa Yoo; Hyuk Chan Kwon

doi:10.1016/S0921-4526(99)02983-X

The suppression of Coulomb oscillation in a normal-ferromagnet-normal metal single-electron transistor

Jinhee Kim, Sangchul Oh, Ju Jin Kim, Jeong O. Lee, Jong Wan Park, Kyung Hwa Yoo, Hyuk Chan Kwon

Department of Physics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The electric transport properties of an Al/Al₂O₃/Ni/Al₂O₃/Al single-electron transistor were studied. Compared to the all-normal-metal single-electron transistors, our sample showed enhanced tunnel current inside the Coulomb gap both in the superconducting and the normal state of the Al. The tunnel current showed sharp increase for the magnetic field H ≈ ± 1.57 T, which also was evidenced by the change of current-voltage (I-V) characteristics with the magnetic field.

Original language	English
Pages (from-to)	1794-1795
Number of pages	2
Journal	Physica B: Condensed Matter
Volume	284-288
Issue number	PART II
DOIs	https://doi.org/10.1016/S0921-4526(99)02983-X
Publication status	Published - 2000

Bibliographical note

Funding Information:
This work was supported in part by KRISS (Project No. 99-0502-001) and also by MOST through the Nanostructure Project.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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Cite this

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title = "The suppression of Coulomb oscillation in a normal-ferromagnet-normal metal single-electron transistor",

abstract = "The electric transport properties of an Al/Al2O3/Ni/Al2O3/Al single-electron transistor were studied. Compared to the all-normal-metal single-electron transistors, our sample showed enhanced tunnel current inside the Coulomb gap both in the superconducting and the normal state of the Al. The tunnel current showed sharp increase for the magnetic field H ≈ ± 1.57 T, which also was evidenced by the change of current-voltage (I-V) characteristics with the magnetic field.",

author = "Jinhee Kim and Sangchul Oh and Kim, {Ju Jin} and Lee, {Jeong O.} and Park, {Jong Wan} and Yoo, {Kyung Hwa} and Kwon, {Hyuk Chan}",

note = "Funding Information: This work was supported in part by KRISS (Project No. 99-0502-001) and also by MOST through the Nanostructure Project.",

year = "2000",

doi = "10.1016/S0921-4526(99)02983-X",

language = "English",

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journal = "Physica B: Condensed Matter",

issn = "0921-4526",

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T1 - The suppression of Coulomb oscillation in a normal-ferromagnet-normal metal single-electron transistor

AU - Kim, Jinhee

AU - Oh, Sangchul

AU - Kim, Ju Jin

AU - Lee, Jeong O.

AU - Park, Jong Wan

AU - Yoo, Kyung Hwa

AU - Kwon, Hyuk Chan

N1 - Funding Information: This work was supported in part by KRISS (Project No. 99-0502-001) and also by MOST through the Nanostructure Project.

PY - 2000

Y1 - 2000

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AB - The electric transport properties of an Al/Al2O3/Ni/Al2O3/Al single-electron transistor were studied. Compared to the all-normal-metal single-electron transistors, our sample showed enhanced tunnel current inside the Coulomb gap both in the superconducting and the normal state of the Al. The tunnel current showed sharp increase for the magnetic field H ≈ ± 1.57 T, which also was evidenced by the change of current-voltage (I-V) characteristics with the magnetic field.

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JO - Physica B: Condensed Matter

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