The electric transport properties of an Al/Al2O3/Ni/Al2O3/Al single-electron transistor were studied. Compared to the all-normal-metal single-electron transistors, our sample showed enhanced tunnel current inside the Coulomb gap both in the superconducting and the normal state of the Al. The tunnel current showed sharp increase for the magnetic field H ≈ ± 1.57 T, which also was evidenced by the change of current-voltage (I-V) characteristics with the magnetic field.
Bibliographical noteFunding Information:
This work was supported in part by KRISS (Project No. 99-0502-001) and also by MOST through the Nanostructure Project.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering