The suppression of Coulomb oscillation in a normal-ferromagnet-normal metal single-electron transistor

Jinhee Kim, Sangchul Oh, Ju Jin Kim, Jeong O. Lee, Jong Wan Park, Kyung-hwa Yoo, Hyuk Chan Kwon

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The electric transport properties of an Al/Al2O3/Ni/Al2O3/Al single-electron transistor were studied. Compared to the all-normal-metal single-electron transistors, our sample showed enhanced tunnel current inside the Coulomb gap both in the superconducting and the normal state of the Al. The tunnel current showed sharp increase for the magnetic field H ≈ ± 1.57 T, which also was evidenced by the change of current-voltage (I-V) characteristics with the magnetic field.

Original languageEnglish
Pages (from-to)1794-1795
Number of pages2
JournalPhysica B: Condensed Matter
Volume284-288
Issue numberPART II
DOIs
Publication statusPublished - 2000 Jan 1

Fingerprint

Single electron transistors
single electron transistors
Tunnels
Metals
retarding
Magnetic fields
oscillations
tunnels
metals
Transport properties
magnetic fields
Electric potential
transport properties
electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Kim, Jinhee ; Oh, Sangchul ; Kim, Ju Jin ; Lee, Jeong O. ; Park, Jong Wan ; Yoo, Kyung-hwa ; Kwon, Hyuk Chan. / The suppression of Coulomb oscillation in a normal-ferromagnet-normal metal single-electron transistor. In: Physica B: Condensed Matter. 2000 ; Vol. 284-288, No. PART II. pp. 1794-1795.
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The suppression of Coulomb oscillation in a normal-ferromagnet-normal metal single-electron transistor. / Kim, Jinhee; Oh, Sangchul; Kim, Ju Jin; Lee, Jeong O.; Park, Jong Wan; Yoo, Kyung-hwa; Kwon, Hyuk Chan.

In: Physica B: Condensed Matter, Vol. 284-288, No. PART II, 01.01.2000, p. 1794-1795.

Research output: Contribution to journalArticle

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AU - Kwon, Hyuk Chan

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