Abstract
The electric transport properties of an Al/Al2O3/Ni/Al2O3/Al single-electron transistor were studied. Compared to the all-normal-metal single-electron transistors, our sample showed enhanced tunnel current inside the Coulomb gap both in the superconducting and the normal state of the Al. The tunnel current showed sharp increase for the magnetic field H ≈ ± 1.57 T, which also was evidenced by the change of current-voltage (I-V) characteristics with the magnetic field.
| Original language | English |
|---|---|
| Pages (from-to) | 1794-1795 |
| Number of pages | 2 |
| Journal | Physica B: Condensed Matter |
| Volume | 284-288 |
| Issue number | PART II |
| DOIs | |
| Publication status | Published - 2000 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
Cite this
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The suppression of Coulomb oscillation in a normal-ferromagnet-normal metal single-electron transistor. / Kim, Jinhee; Oh, Sangchul; Kim, Ju Jin; Lee, Jeong O.; Park, Jong Wan; Yoo, Kyung-hwa; Kwon, Hyuk Chan.
In: Physica B: Condensed Matter, Vol. 284-288, No. PART II, 01.01.2000, p. 1794-1795.Research output: Contribution to journal › Article
TY - JOUR
T1 - The suppression of Coulomb oscillation in a normal-ferromagnet-normal metal single-electron transistor
AU - Kim, Jinhee
AU - Oh, Sangchul
AU - Kim, Ju Jin
AU - Lee, Jeong O.
AU - Park, Jong Wan
AU - Yoo, Kyung-hwa
AU - Kwon, Hyuk Chan
PY - 2000/1/1
Y1 - 2000/1/1
N2 - The electric transport properties of an Al/Al2O3/Ni/Al2O3/Al single-electron transistor were studied. Compared to the all-normal-metal single-electron transistors, our sample showed enhanced tunnel current inside the Coulomb gap both in the superconducting and the normal state of the Al. The tunnel current showed sharp increase for the magnetic field H ≈ ± 1.57 T, which also was evidenced by the change of current-voltage (I-V) characteristics with the magnetic field.
AB - The electric transport properties of an Al/Al2O3/Ni/Al2O3/Al single-electron transistor were studied. Compared to the all-normal-metal single-electron transistors, our sample showed enhanced tunnel current inside the Coulomb gap both in the superconducting and the normal state of the Al. The tunnel current showed sharp increase for the magnetic field H ≈ ± 1.57 T, which also was evidenced by the change of current-voltage (I-V) characteristics with the magnetic field.
UR - http://www.scopus.com/inward/record.url?scp=0033706094&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033706094&partnerID=8YFLogxK
U2 - 10.1016/S0921-4526(99)02983-X
DO - 10.1016/S0921-4526(99)02983-X
M3 - Article
AN - SCOPUS:0033706094
VL - 284-288
SP - 1794
EP - 1795
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
SN - 0921-4526
IS - PART II
ER -