Abstract
The electric transport properties of an Al/Al2O3/Ni/Al2O3/Al single-electron transistor were studied. Compared to the all-normal-metal single-electron transistors, our sample showed enhanced tunnel current inside the Coulomb gap both in the superconducting and the normal state of the Al. The tunnel current showed sharp increase for the magnetic field H ≈ ± 1.57 T, which also was evidenced by the change of current-voltage (I-V) characteristics with the magnetic field.
| Original language | English |
|---|---|
| Pages (from-to) | 1794-1795 |
| Number of pages | 2 |
| Journal | Physica B: Condensed Matter |
| Volume | 284-288 |
| Issue number | PART II |
| DOIs | |
| Publication status | Published - 2000 Jan 1 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
Fingerprint Dive into the research topics of 'The suppression of Coulomb oscillation in a normal-ferromagnet-normal metal single-electron transistor'. Together they form a unique fingerprint.
Cite this
Kim, J., Oh, S., Kim, J. J., Lee, J. O., Park, J. W., Yoo, K. H., & Kwon, H. C. (2000). The suppression of Coulomb oscillation in a normal-ferromagnet-normal metal single-electron transistor. Physica B: Condensed Matter, 284-288(PART II), 1794-1795. https://doi.org/10.1016/S0921-4526(99)02983-X