Theoretical Analysis of Ballistic Current Transport in Monolayer Black Arsenic MOSFETs

Jae Eun Seo, Dongwook Seo, Jiwon Chang

Research output: Contribution to journalArticlepeer-review

Abstract

Recently, mono-elemental 2-D material black arsenic (BA), related to black phosphorus (BP), with better ambient stability and possibly higher mobility than BP has been demonstrated as a channel material in metal-oxide-semiconductor field effect transistors (MOSFETs). Here, we present a theoretical study on ballistic current transport in n-and p-MOSFETs based on monolayer BA. Monolayer BA has very similar band structures with monolayer BP which is characterized by the highly anisotropic Γ valley, but with the addition of other degenerate valleys (Δ valleys) near Γ valley. We examine the role of Γ and Δ valleys in current transport of monolayer BA MOSFETs through valley-resolved quantum transport simulations. The effects of different transport directions and the device scaling are also discussed with the benchmarking against monolayer BP MOSFETs.

Original languageEnglish
Article number8948359
Pages (from-to)622-626
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume67
Issue number2
DOIs
Publication statusPublished - 2020 Feb

Bibliographical note

Funding Information:
This work was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, Information and Communication Technology (ICT) and Future Planning under Grant 2017R1C1B5015940.

Funding Information:
Manuscript received November 11, 2019; revised November 24, 2019; accepted November 27, 2019. Date of publication January 1, 2020; date of current version January 27, 2020. This work was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, Information and Communication Technology (ICT) and Future Planning under Grant 2017R1C1B5015940. The review of this article was arranged by Editor J. Mateos. (Corresponding author: Jiwon Chang.) The authors are with the Department of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, South Korea (e-mail: jiwon.chang@unist.ac.kr).

Publisher Copyright:
© 1963-2012 IEEE.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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