Theoretical and experimental analysis of the source resistance components in In0.7Ga0.3As quantum-well high-electron-mobility transistors

In Geun Lee, Dae Hong Ko, Seung Won Yun, Jun Gyu Kim, Hyeon Bhin Jo, Dae Hyun Kim, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Fingerprint Dive into the research topics of 'Theoretical and experimental analysis of the source resistance components in In<sub>0.7</sub>Ga<sub>0.3</sub>As quantum-well high-electron-mobility transistors'. Together they form a unique fingerprint.

Physics & Astronomy