Theoretical approach to evaluating beryllium oxide as a gate dielectric considering electromagnetics and thermal stability

J. H. Yum, G. Bersuker, J. Oh, S. K. Banerjee

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The effectiveness of an atomic layer deposited beryllium oxide (BeO) barrier layer has been investigated through physical and electrical analysis as a way to control the interfacial layer on Si and III-V substrates recently. In this paper, a theoretical model is suggested to find the most promising gate dielectric based on electromagnetic interactions between the channel carrier and atoms in the gate dielectric, as well as the structural stability of the gate dielectric. Using this model, Al 2O 3, BeO, SiO 2, and HfO 2 were evaluated as gate dielectrics for Si and III-V metal oxide semiconductor devices.

Original languageEnglish
Article number053501
JournalApplied Physics Letters
Volume100
Issue number5
DOIs
Publication statusPublished - 2012 Jan 30

Fingerprint

beryllium oxides
thermal stability
electromagnetism
electromagnetic interactions
structural stability
barrier layers
semiconductor devices
metal oxide semiconductors
atoms

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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Theoretical approach to evaluating beryllium oxide as a gate dielectric considering electromagnetics and thermal stability. / Yum, J. H.; Bersuker, G.; Oh, J.; Banerjee, S. K.

In: Applied Physics Letters, Vol. 100, No. 5, 053501, 30.01.2012.

Research output: Contribution to journalArticle

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