The effectiveness of an atomic layer deposited beryllium oxide (BeO) barrier layer has been investigated through physical and electrical analysis as a way to control the interfacial layer on Si and III-V substrates recently. In this paper, a theoretical model is suggested to find the most promising gate dielectric based on electromagnetic interactions between the channel carrier and atoms in the gate dielectric, as well as the structural stability of the gate dielectric. Using this model, Al 2O 3, BeO, SiO 2, and HfO 2 were evaluated as gate dielectrics for Si and III-V metal oxide semiconductor devices.
Bibliographical noteFunding Information:
This work was supported in part by the Robert Welch Foundation (Grant Nos. F-1038 and F-1621) and NSF (Grant No. DMR-0706227).
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)