Ferroelectric tunnel junction (FTJ) exploiting the switchable polarization of ferroelectric material holds great potential for the low-power non-volatile memory. Recently, two-dimensional (2D) ferroelectric material CuInP2S6 (CIPS) which can provide ferroelectricity at the ultimate atomic-scale has been successfully introduced in FTJ to achieve significantly improved TER. Here, we present a theoretical study on the performance of FTJ based on CIPS through the quantum transport simulation using kp Hamiltonian obtained from density functional theory. Benchmarking with ferroelectric HfZrO2-based FTJ reveals that much higher TER can be achieved in CIPS-based FTJ due to a lower tunneling potential barrier and a larger tunneling effective mass.
|Number of pages||4|
|Journal||IEEE Electron Device Letters|
|Publication status||Published - 2021 Oct|
Bibliographical noteFunding Information:
Manuscript received July 20, 2021; accepted July 30, 2021. Date of publication August 9, 2021; date of current version September 27, 2021. This work was supported in part by the National Research and Development Program through the National Research Foundation of Korea (NRF) through the Ministry of Science and ICT under Grant 2021M3F3A2A0301771911 and in part by the Basic Science Research Program through the NRF funded by the Ministry of Science, ICT and Future Planning under Grant 2021M3F3A2A03017719. The review of this letter was arranged by Editor V. Moroz. (Corresponding author: Jiwon Chang.) Eunyeong Yang and Jiwon Chang are with the Department of System Semiconductor Engineering, Yonsei University, Seoul 03722, South Korea, and also with the Department of Materials Science and Engineering, Yonsei University, Seoul 03722, South Korea (e-mail: firstname.lastname@example.org).
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering