Theoretical study of phosphorene tunneling field effect transistors

Jiwon Chang, Chris Hobbs

Research output: Contribution to journalArticlepeer-review

38 Citations (Scopus)

Abstract

In this work, device performances of tunneling field effect transistors (TFETs) based on phosphorene are explored via self-consistent atomistic quantum transport simulations. Phosphorene is an ultra-thin two-dimensional (2-D) material with a direct band gap suitable for TFETs applications. Our simulation shows that phosphorene TFETs exhibit subthreshold slope below 60 mV/dec and a wide range of on-current depending on the transport direction due to highly anisotropic band structures of phosphorene. By benchmarking with monolayer MoTe2 TFETs, we predict that phosphorene TFETs oriented in the small effective mass direction can yield much larger on-current at the same on-current/off-current ratio than monolayer MoTe2 TFETs. It is also observed that a gate underlap structure is required for scaling down phosphorene TFETs in the small effective mass direction to suppress the source-to-drain direct tunneling leakage current.

Original languageEnglish
Article number083509
JournalApplied Physics Letters
Volume106
Issue number8
DOIs
Publication statusPublished - 2015 Feb 23

Bibliographical note

Publisher Copyright:
© 2015 AIP Publishing LLC.

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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