Thermal activation effects on the stoichiometry of indium zinc oxide thin-film transistors

Na Kim Doo, Gun Hee Kim, Dong Lim Kim, Si Joon Kim, Heon Je Kim

Research output: Contribution to journal › Article

Original language	English
Pages (from-to)	1689
Number of pages	1693
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	207
Issue number	7
Publication status	Published - 2010 Jul

Cite this

@article{3bfa5d9412df4f5cb560ab38def785cd,

title = "Thermal activation effects on the stoichiometry of indium zinc oxide thin-film transistors",

author = "Doo, {Na Kim} and Kim, {Gun Hee} and Kim, {Dong Lim} and Kim, {Si Joon} and Kim, {Heon Je}",

year = "2010",

month = jul,

language = "English",

volume = "207",

pages = "1689",

journal = "Physica Status Solidi (A) Applications and Materials Science",

issn = "1862-6300",

publisher = "Wiley-VCH Verlag",

number = "7",

}

TY - JOUR

T1 - Thermal activation effects on the stoichiometry of indium zinc oxide thin-film transistors

AU - Doo, Na Kim

AU - Kim, Gun Hee

AU - Kim, Dong Lim

AU - Kim, Si Joon

AU - Kim, Heon Je

PY - 2010/7

Y1 - 2010/7

M3 - Article

VL - 207

SP - 1689

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

SN - 1862-6300

IS - 7

ER -