Thermal activation effects on the stoichiometry of indium zinc oxide thin-film transistors

Na Kim Doo, Gun Hee Kim, Dong Lim Kim, Si Joon Kim, Heon Je Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)
Original languageEnglish
Pages (from-to)1689
Number of pages1693
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume207
Issue number7
Publication statusPublished - 2010 Jul

Cite this

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title = "Thermal activation effects on the stoichiometry of indium zinc oxide thin-film transistors",
author = "Doo, {Na Kim} and Kim, {Gun Hee} and Kim, {Dong Lim} and Kim, {Si Joon} and Kim, {Heon Je}",
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pages = "1689",
journal = "Physica Status Solidi (A) Applications and Materials Science",
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number = "7",

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Thermal activation effects on the stoichiometry of indium zinc oxide thin-film transistors. / Doo, Na Kim; Kim, Gun Hee; Kim, Dong Lim; Kim, Si Joon; Kim, Heon Je.

In: Physica Status Solidi (A) Applications and Materials Science, Vol. 207, No. 7, 07.2010, p. 1689.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Thermal activation effects on the stoichiometry of indium zinc oxide thin-film transistors

AU - Doo, Na Kim

AU - Kim, Gun Hee

AU - Kim, Dong Lim

AU - Kim, Si Joon

AU - Kim, Heon Je

PY - 2010/7

Y1 - 2010/7

M3 - Article

VL - 207

SP - 1689

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

SN - 1862-6300

IS - 7

ER -