| Original language | English |
|---|---|
| Pages (from-to) | 1689 |
| Number of pages | 1693 |
| Journal | Physica Status Solidi (A) Applications and Materials Science |
| Volume | 207 |
| Issue number | 7 |
| Publication status | Published - 2010 Jul |
Cite this
Doo, N. K., Kim, G. H., Kim, D. L., Kim, S. J., & Kim, H. J. (2010). Thermal activation effects on the stoichiometry of indium zinc oxide thin-film transistors. Physica Status Solidi (A) Applications and Materials Science, 207(7), 1689.
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title = "Thermal activation effects on the stoichiometry of indium zinc oxide thin-film transistors",
author = "Doo, {Na Kim} and Kim, {Gun Hee} and Kim, {Dong Lim} and Kim, {Si Joon} and Kim, {Heon Je}",
year = "2010",
month = "7",
language = "English",
volume = "207",
pages = "1689",
journal = "Physica Status Solidi (A) Applications and Materials Science",
issn = "1862-6300",
publisher = "Wiley-VCH Verlag",
number = "7",
}
Doo, NK, Kim, GH, Kim, DL, Kim, SJ & Kim, HJ 2010, 'Thermal activation effects on the stoichiometry of indium zinc oxide thin-film transistors', Physica Status Solidi (A) Applications and Materials Science, vol. 207, no. 7, pp. 1689.
Thermal activation effects on the stoichiometry of indium zinc oxide thin-film transistors. / Doo, Na Kim; Kim, Gun Hee; Kim, Dong Lim; Kim, Si Joon; Kim, Heon Je.
In: Physica Status Solidi (A) Applications and Materials Science, Vol. 207, No. 7, 07.2010, p. 1689.Research output: Contribution to journal › Article
TY - JOUR
T1 - Thermal activation effects on the stoichiometry of indium zinc oxide thin-film transistors
AU - Doo, Na Kim
AU - Kim, Gun Hee
AU - Kim, Dong Lim
AU - Kim, Si Joon
AU - Kim, Heon Je
PY - 2010/7
Y1 - 2010/7
M3 - Article
VL - 207
SP - 1689
JO - Physica Status Solidi (A) Applications and Materials Science
JF - Physica Status Solidi (A) Applications and Materials Science
SN - 1862-6300
IS - 7
ER -
Doo NK, Kim GH, Kim DL, Kim SJ, Kim HJ. Thermal activation effects on the stoichiometry of indium zinc oxide thin-film transistors. Physica Status Solidi (A) Applications and Materials Science. 2010 Jul;207(7):1689.