Thermal analysis and design of GaN-based LEDs for high power applications

L. Kim, G. W. Lee, W. J. Hwang, J. S. Yang, Moo Whan Shin

Research output: Contribution to journalConference article

14 Citations (Scopus)

Abstract

In this paper, a thermal analysis was made on blue and white GaN-based LEDs. The thermal analysis consists of experimental temperature measurements and finite element calculations on the LED chips and surface of epoxy package. The direct on-chip temperature measurement using a nematic liquid crystal resulted in a hot spot with a transition boundary of 43 °C in a range of about 450 to 500 μm under a forward voltage of 3.9 V. The surface temperature of the epoxy package was measured as a function of input power and it exhibits a linear relationship. The finite element method was used for the calculation of temperature distributions for samples and the simulated data showed good agreement with the experimental results.

Original languageEnglish
Pages (from-to)2261-2264
Number of pages4
JournalPhysica Status Solidi C: Conferences
Issue number7
DOIs
Publication statusPublished - 2003 Dec 1
Event5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
Duration: 2003 May 252003 May 30

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All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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