Thermal analysis and design of GaN-based LEDs for high power applications

L. Kim, G. W. Lee, W. J. Hwang, J. S. Yang, Moo Whan Shin

Research output: Contribution to journalConference article

13 Citations (Scopus)

Abstract

In this paper, a thermal analysis was made on blue and white GaN-based LEDs. The thermal analysis consists of experimental temperature measurements and finite element calculations on the LED chips and surface of epoxy package. The direct on-chip temperature measurement using a nematic liquid crystal resulted in a hot spot with a transition boundary of 43 °C in a range of about 450 to 500 μm under a forward voltage of 3.9 V. The surface temperature of the epoxy package was measured as a function of input power and it exhibits a linear relationship. The finite element method was used for the calculation of temperature distributions for samples and the simulated data showed good agreement with the experimental results.

Original languageEnglish
Pages (from-to)2261-2264
Number of pages4
JournalPhysica Status Solidi C: Conferences
Issue number7
DOIs
Publication statusPublished - 2003 Dec 1
Event5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
Duration: 2003 May 252003 May 30

Fingerprint

temperature measurement
thermal analysis
light emitting diodes
chips
surface temperature
finite element method
temperature distribution
liquid crystals
electric potential

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

Kim, L. ; Lee, G. W. ; Hwang, W. J. ; Yang, J. S. ; Shin, Moo Whan. / Thermal analysis and design of GaN-based LEDs for high power applications. In: Physica Status Solidi C: Conferences. 2003 ; No. 7. pp. 2261-2264.
@article{b092f4ca227b4e6691e1086eaa678b49,
title = "Thermal analysis and design of GaN-based LEDs for high power applications",
abstract = "In this paper, a thermal analysis was made on blue and white GaN-based LEDs. The thermal analysis consists of experimental temperature measurements and finite element calculations on the LED chips and surface of epoxy package. The direct on-chip temperature measurement using a nematic liquid crystal resulted in a hot spot with a transition boundary of 43 °C in a range of about 450 to 500 μm under a forward voltage of 3.9 V. The surface temperature of the epoxy package was measured as a function of input power and it exhibits a linear relationship. The finite element method was used for the calculation of temperature distributions for samples and the simulated data showed good agreement with the experimental results.",
author = "L. Kim and Lee, {G. W.} and Hwang, {W. J.} and Yang, {J. S.} and Shin, {Moo Whan}",
year = "2003",
month = "12",
day = "1",
doi = "10.1002/pssc.200303466",
language = "English",
pages = "2261--2264",
journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",
issn = "1862-6351",
publisher = "Wiley-VCH Verlag",
number = "7",

}

Thermal analysis and design of GaN-based LEDs for high power applications. / Kim, L.; Lee, G. W.; Hwang, W. J.; Yang, J. S.; Shin, Moo Whan.

In: Physica Status Solidi C: Conferences, No. 7, 01.12.2003, p. 2261-2264.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Thermal analysis and design of GaN-based LEDs for high power applications

AU - Kim, L.

AU - Lee, G. W.

AU - Hwang, W. J.

AU - Yang, J. S.

AU - Shin, Moo Whan

PY - 2003/12/1

Y1 - 2003/12/1

N2 - In this paper, a thermal analysis was made on blue and white GaN-based LEDs. The thermal analysis consists of experimental temperature measurements and finite element calculations on the LED chips and surface of epoxy package. The direct on-chip temperature measurement using a nematic liquid crystal resulted in a hot spot with a transition boundary of 43 °C in a range of about 450 to 500 μm under a forward voltage of 3.9 V. The surface temperature of the epoxy package was measured as a function of input power and it exhibits a linear relationship. The finite element method was used for the calculation of temperature distributions for samples and the simulated data showed good agreement with the experimental results.

AB - In this paper, a thermal analysis was made on blue and white GaN-based LEDs. The thermal analysis consists of experimental temperature measurements and finite element calculations on the LED chips and surface of epoxy package. The direct on-chip temperature measurement using a nematic liquid crystal resulted in a hot spot with a transition boundary of 43 °C in a range of about 450 to 500 μm under a forward voltage of 3.9 V. The surface temperature of the epoxy package was measured as a function of input power and it exhibits a linear relationship. The finite element method was used for the calculation of temperature distributions for samples and the simulated data showed good agreement with the experimental results.

UR - http://www.scopus.com/inward/record.url?scp=25444478976&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=25444478976&partnerID=8YFLogxK

U2 - 10.1002/pssc.200303466

DO - 10.1002/pssc.200303466

M3 - Conference article

SP - 2261

EP - 2264

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

SN - 1862-6351

IS - 7

ER -