In this paper, a thermal analysis was made on blue and white GaN-based LEDs. The thermal analysis consists of experimental temperature measurements and finite element calculations on the LED chips and surface of epoxy package. The direct on-chip temperature measurement using a nematic liquid crystal resulted in a hot spot with a transition boundary of 43 °C in a range of about 450 to 500 μm under a forward voltage of 3.9 V. The surface temperature of the epoxy package was measured as a function of input power and it exhibits a linear relationship. The finite element method was used for the calculation of temperature distributions for samples and the simulated data showed good agreement with the experimental results.
|Number of pages||4|
|Journal||Physica Status Solidi C: Conferences|
|Publication status||Published - 2003 Dec 1|
|Event||5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan|
Duration: 2003 May 25 → 2003 May 30
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics