Thermal analysis of degradation in Ga2O3-In 2O3-ZnO thin-film transistors

Mami Fujii, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki, Ji Sim Jung, Jang Yeon Kwon

Research output: Contribution to journalArticle

74 Citations (Scopus)

Abstract

Degradation of Ga2O3-In2O3-ZnO (GIZO) thin-film transistors (TFTs), which are promising for driving circuits of next-generation displays, was studied. We found a degradation mode that was not observed in silicon TFTs. A parallel shift without any change of the transfer curve was observed under gate voltage stress. Judging from the bias voltage dependences we confirmed that the mode was mainly dominated by a vertical electric field. Thermal distribution was measured to analysis the degradation mechanism. Joule heating caused by drain current was observed; however, a marked acceleration of degradation by drain bias was not found. Therefore, we concluded that Joule heating did not accelerate degradation. Recovery of electrical properties independent of stress voltage were observed.

Original languageEnglish
Pages (from-to)6236-6240
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume47
Issue number8 PART 1
DOIs
Publication statusPublished - 2008 Aug 8

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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