Degradation of Ga2O3-In2O3-ZnO (GIZO) thin-film transistors (TFTs), which are promising for driving circuits of next-generation displays, was studied. We found a degradation mode that was not observed in silicon TFTs. A parallel shift without any change of the transfer curve was observed under gate voltage stress. Judging from the bias voltage dependences we confirmed that the mode was mainly dominated by a vertical electric field. Thermal distribution was measured to analysis the degradation mechanism. Joule heating caused by drain current was observed; however, a marked acceleration of degradation by drain bias was not found. Therefore, we concluded that Joule heating did not accelerate degradation. Recovery of electrical properties independent of stress voltage were observed.
|Number of pages||5|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||8 PART 1|
|Publication status||Published - 2008 Aug 8|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)