Thermal analysis of GaN-Based HFET devices using the unit thermal profile approach

Jeong Park, Chin C. Lee, Jong Wook Kim, Jae Seung Lee, Won Sang Lee, Jin Ho Shin, Moo Whan Shin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

GaN-based electronic devices have been demonstrated to be ideal for high power and high frequency applications. GaN-based devices fabricated on sapphire substrates have been known to suffer from serious heating issues due to their poor thermal conductivity. Thermal analysis for GaN-based devices has been increasingly sought after since their heat dissipation can sufficiently degrade the DC and the RF performances of the device, in particular during the high power operation. This paper focuses primarily on the thermal analysis of AlGaN/GaN heterostructure field-effect-transistors (HFETs). We present our thermal simulation and compare that with experimental results. Liquid crystal technique was utilized to map the thermal profile of the device surface.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2001
EditorsH. Harima, T. Kimoto, S. Nishino, S. Yoshida
PublisherTrans Tech Publications Ltd
Pages1523-1526
Number of pages4
ISBN (Print)9780878498949
DOIs
Publication statusPublished - 2002 Jan 1
EventInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2001 - Tsukuba, Japan
Duration: 2001 Oct 282001 Nov 2

Publication series

NameMaterials Science Forum
Volume389-393
ISSN (Print)0255-5476

Other

OtherInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2001
CountryJapan
CityTsukuba
Period01/10/2801/11/2

Fingerprint

High electron mobility transistors
Thermoanalysis
thermal analysis
field effect transistors
Liquid Crystals
Aluminum Oxide
profiles
Heat losses
Sapphire
Liquid crystals
Thermal conductivity
Heating
Substrates
thermal simulation
sapphire
thermal conductivity
direct current
liquid crystals
Hot Temperature
cooling

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Park, J., Lee, C. C., Kim, J. W., Lee, J. S., Lee, W. S., Shin, J. H., & Shin, M. W. (2002). Thermal analysis of GaN-Based HFET devices using the unit thermal profile approach. In H. Harima, T. Kimoto, S. Nishino, & S. Yoshida (Eds.), Silicon Carbide and Related Materials 2001 (pp. 1523-1526). (Materials Science Forum; Vol. 389-393). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.389-393.1523
Park, Jeong ; Lee, Chin C. ; Kim, Jong Wook ; Lee, Jae Seung ; Lee, Won Sang ; Shin, Jin Ho ; Shin, Moo Whan. / Thermal analysis of GaN-Based HFET devices using the unit thermal profile approach. Silicon Carbide and Related Materials 2001. editor / H. Harima ; T. Kimoto ; S. Nishino ; S. Yoshida. Trans Tech Publications Ltd, 2002. pp. 1523-1526 (Materials Science Forum).
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abstract = "GaN-based electronic devices have been demonstrated to be ideal for high power and high frequency applications. GaN-based devices fabricated on sapphire substrates have been known to suffer from serious heating issues due to their poor thermal conductivity. Thermal analysis for GaN-based devices has been increasingly sought after since their heat dissipation can sufficiently degrade the DC and the RF performances of the device, in particular during the high power operation. This paper focuses primarily on the thermal analysis of AlGaN/GaN heterostructure field-effect-transistors (HFETs). We present our thermal simulation and compare that with experimental results. Liquid crystal technique was utilized to map the thermal profile of the device surface.",
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Park, J, Lee, CC, Kim, JW, Lee, JS, Lee, WS, Shin, JH & Shin, MW 2002, Thermal analysis of GaN-Based HFET devices using the unit thermal profile approach. in H Harima, T Kimoto, S Nishino & S Yoshida (eds), Silicon Carbide and Related Materials 2001. Materials Science Forum, vol. 389-393, Trans Tech Publications Ltd, pp. 1523-1526, International Conference on Silicon Carbide and Related Materials, ICSCRM 2001, Tsukuba, Japan, 01/10/28. https://doi.org/10.4028/www.scientific.net/MSF.389-393.1523

Thermal analysis of GaN-Based HFET devices using the unit thermal profile approach. / Park, Jeong; Lee, Chin C.; Kim, Jong Wook; Lee, Jae Seung; Lee, Won Sang; Shin, Jin Ho; Shin, Moo Whan.

Silicon Carbide and Related Materials 2001. ed. / H. Harima; T. Kimoto; S. Nishino; S. Yoshida. Trans Tech Publications Ltd, 2002. p. 1523-1526 (Materials Science Forum; Vol. 389-393).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - GaN-based electronic devices have been demonstrated to be ideal for high power and high frequency applications. GaN-based devices fabricated on sapphire substrates have been known to suffer from serious heating issues due to their poor thermal conductivity. Thermal analysis for GaN-based devices has been increasingly sought after since their heat dissipation can sufficiently degrade the DC and the RF performances of the device, in particular during the high power operation. This paper focuses primarily on the thermal analysis of AlGaN/GaN heterostructure field-effect-transistors (HFETs). We present our thermal simulation and compare that with experimental results. Liquid crystal technique was utilized to map the thermal profile of the device surface.

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Park J, Lee CC, Kim JW, Lee JS, Lee WS, Shin JH et al. Thermal analysis of GaN-Based HFET devices using the unit thermal profile approach. In Harima H, Kimoto T, Nishino S, Yoshida S, editors, Silicon Carbide and Related Materials 2001. Trans Tech Publications Ltd. 2002. p. 1523-1526. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.389-393.1523