Thermal analysis of GaN-based laser diode package

W. J. Hwang, T. H. Lee, O. H. Nam, H. K. Kim, J. S. Kwak, Y. J. Park, Moo Whan Shin

Research output: Contribution to journalConference article

7 Citations (Scopus)

Abstract

This paper reports on the thermal behavior of GaN-based laser diode (LD) package as functions of cooling systems, die attaching materials, and chip loading conditions. Thermal resistance and junction temperature was determined by electrical-thermal transient method. Significant change of thermal resistance with input current was observed under natural cooling condition due to the sensitive change of heat transfer coefficient (A) with temperature. Employment of PbSn as a die attachment was more advantageous over Ag-paste in thermal behavior of LD package. Compare the thermal resistance of LD packages epidown and epi-up structures. The partial thermal resistance from junction to submount is 4.68 K/W for epidown structure, and 9.65 K/W to epi-up structure. The results demonstrate that the total thermal resistance of LD package be controlled mainly by the packaging design rather than the chip structure itself.

Original languageEnglish
Pages (from-to)2174-2177
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume3
DOIs
Publication statusPublished - 2006 Jul 31
Event6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany
Duration: 2005 Aug 282005 Sep 2

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thermal resistance
thermal analysis
semiconductor lasers
chips
cooling systems
heat transfer coefficients
packaging
attachment
cooling
temperature

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

Hwang, W. J. ; Lee, T. H. ; Nam, O. H. ; Kim, H. K. ; Kwak, J. S. ; Park, Y. J. ; Shin, Moo Whan. / Thermal analysis of GaN-based laser diode package. In: Physica Status Solidi (C) Current Topics in Solid State Physics. 2006 ; Vol. 3. pp. 2174-2177.
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abstract = "This paper reports on the thermal behavior of GaN-based laser diode (LD) package as functions of cooling systems, die attaching materials, and chip loading conditions. Thermal resistance and junction temperature was determined by electrical-thermal transient method. Significant change of thermal resistance with input current was observed under natural cooling condition due to the sensitive change of heat transfer coefficient (A) with temperature. Employment of PbSn as a die attachment was more advantageous over Ag-paste in thermal behavior of LD package. Compare the thermal resistance of LD packages epidown and epi-up structures. The partial thermal resistance from junction to submount is 4.68 K/W for epidown structure, and 9.65 K/W to epi-up structure. The results demonstrate that the total thermal resistance of LD package be controlled mainly by the packaging design rather than the chip structure itself.",
author = "Hwang, {W. J.} and Lee, {T. H.} and Nam, {O. H.} and Kim, {H. K.} and Kwak, {J. S.} and Park, {Y. J.} and Shin, {Moo Whan}",
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Thermal analysis of GaN-based laser diode package. / Hwang, W. J.; Lee, T. H.; Nam, O. H.; Kim, H. K.; Kwak, J. S.; Park, Y. J.; Shin, Moo Whan.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 3, 31.07.2006, p. 2174-2177.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Thermal analysis of GaN-based laser diode package

AU - Hwang, W. J.

AU - Lee, T. H.

AU - Nam, O. H.

AU - Kim, H. K.

AU - Kwak, J. S.

AU - Park, Y. J.

AU - Shin, Moo Whan

PY - 2006/7/31

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N2 - This paper reports on the thermal behavior of GaN-based laser diode (LD) package as functions of cooling systems, die attaching materials, and chip loading conditions. Thermal resistance and junction temperature was determined by electrical-thermal transient method. Significant change of thermal resistance with input current was observed under natural cooling condition due to the sensitive change of heat transfer coefficient (A) with temperature. Employment of PbSn as a die attachment was more advantageous over Ag-paste in thermal behavior of LD package. Compare the thermal resistance of LD packages epidown and epi-up structures. The partial thermal resistance from junction to submount is 4.68 K/W for epidown structure, and 9.65 K/W to epi-up structure. The results demonstrate that the total thermal resistance of LD package be controlled mainly by the packaging design rather than the chip structure itself.

AB - This paper reports on the thermal behavior of GaN-based laser diode (LD) package as functions of cooling systems, die attaching materials, and chip loading conditions. Thermal resistance and junction temperature was determined by electrical-thermal transient method. Significant change of thermal resistance with input current was observed under natural cooling condition due to the sensitive change of heat transfer coefficient (A) with temperature. Employment of PbSn as a die attachment was more advantageous over Ag-paste in thermal behavior of LD package. Compare the thermal resistance of LD packages epidown and epi-up structures. The partial thermal resistance from junction to submount is 4.68 K/W for epidown structure, and 9.65 K/W to epi-up structure. The results demonstrate that the total thermal resistance of LD package be controlled mainly by the packaging design rather than the chip structure itself.

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