Thermal analysis of GaN-based light emitting diodes with different chip sizes

Lianqiao Yang, Jianzheng Hu, Lan Kim, Moo Whan Shin

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

In this paper, we present the thermal, electrical, and optical analyses of light emitting diode (LED) packages with different chip sizes. The LED packages under investigation employed the same configuration of package components, except for the chip sizes. The forward current was found to increase with the chip size at the same forward voltage due to the area increase of current spreading. The luminous flux and optical power were found to increase with the chip size at the same current density. The thermal analysis was made by the transient thermal measurement and thermal simulation using the finite volume method. It was demonstrated that the thermal resistance decreased with the chip size under the same package conditions both by simulation and experiment. The bulk thermal resistance and spreading thermal resistance were combined together to give out a quantitative investigation of the partial thermal resistance variation. Moreover, the spreading thermal resistance was found to have a great effect on the total thermal resistance of LED packages.

Original languageEnglish
Article number4655585
Pages (from-to)571-575
Number of pages5
JournalIEEE Transactions on Device and Materials Reliability
Volume8
Issue number3
DOIs
Publication statusPublished - 2008 Sep 1

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Heat resistance
Thermoanalysis
Light emitting diodes
Finite volume method
Current density
Fluxes
Electric potential
Hot Temperature
Experiments

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Safety, Risk, Reliability and Quality
  • Electrical and Electronic Engineering

Cite this

@article{1044604463fe4887bab4b990c39f1eea,
title = "Thermal analysis of GaN-based light emitting diodes with different chip sizes",
abstract = "In this paper, we present the thermal, electrical, and optical analyses of light emitting diode (LED) packages with different chip sizes. The LED packages under investigation employed the same configuration of package components, except for the chip sizes. The forward current was found to increase with the chip size at the same forward voltage due to the area increase of current spreading. The luminous flux and optical power were found to increase with the chip size at the same current density. The thermal analysis was made by the transient thermal measurement and thermal simulation using the finite volume method. It was demonstrated that the thermal resistance decreased with the chip size under the same package conditions both by simulation and experiment. The bulk thermal resistance and spreading thermal resistance were combined together to give out a quantitative investigation of the partial thermal resistance variation. Moreover, the spreading thermal resistance was found to have a great effect on the total thermal resistance of LED packages.",
author = "Lianqiao Yang and Jianzheng Hu and Lan Kim and Shin, {Moo Whan}",
year = "2008",
month = "9",
day = "1",
doi = "10.1109/TDMR.2008.2002357",
language = "English",
volume = "8",
pages = "571--575",
journal = "IEEE Transactions on Device and Materials Reliability",
issn = "1530-4388",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "3",

}

Thermal analysis of GaN-based light emitting diodes with different chip sizes. / Yang, Lianqiao; Hu, Jianzheng; Kim, Lan; Shin, Moo Whan.

In: IEEE Transactions on Device and Materials Reliability, Vol. 8, No. 3, 4655585, 01.09.2008, p. 571-575.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Thermal analysis of GaN-based light emitting diodes with different chip sizes

AU - Yang, Lianqiao

AU - Hu, Jianzheng

AU - Kim, Lan

AU - Shin, Moo Whan

PY - 2008/9/1

Y1 - 2008/9/1

N2 - In this paper, we present the thermal, electrical, and optical analyses of light emitting diode (LED) packages with different chip sizes. The LED packages under investigation employed the same configuration of package components, except for the chip sizes. The forward current was found to increase with the chip size at the same forward voltage due to the area increase of current spreading. The luminous flux and optical power were found to increase with the chip size at the same current density. The thermal analysis was made by the transient thermal measurement and thermal simulation using the finite volume method. It was demonstrated that the thermal resistance decreased with the chip size under the same package conditions both by simulation and experiment. The bulk thermal resistance and spreading thermal resistance were combined together to give out a quantitative investigation of the partial thermal resistance variation. Moreover, the spreading thermal resistance was found to have a great effect on the total thermal resistance of LED packages.

AB - In this paper, we present the thermal, electrical, and optical analyses of light emitting diode (LED) packages with different chip sizes. The LED packages under investigation employed the same configuration of package components, except for the chip sizes. The forward current was found to increase with the chip size at the same forward voltage due to the area increase of current spreading. The luminous flux and optical power were found to increase with the chip size at the same current density. The thermal analysis was made by the transient thermal measurement and thermal simulation using the finite volume method. It was demonstrated that the thermal resistance decreased with the chip size under the same package conditions both by simulation and experiment. The bulk thermal resistance and spreading thermal resistance were combined together to give out a quantitative investigation of the partial thermal resistance variation. Moreover, the spreading thermal resistance was found to have a great effect on the total thermal resistance of LED packages.

UR - http://www.scopus.com/inward/record.url?scp=54949117591&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=54949117591&partnerID=8YFLogxK

U2 - 10.1109/TDMR.2008.2002357

DO - 10.1109/TDMR.2008.2002357

M3 - Article

AN - SCOPUS:54949117591

VL - 8

SP - 571

EP - 575

JO - IEEE Transactions on Device and Materials Reliability

JF - IEEE Transactions on Device and Materials Reliability

SN - 1530-4388

IS - 3

M1 - 4655585

ER -