Thermal analysis of InAs quantum dot laser diodes with an additional au layer on p-metal

Jung Hwa Jung, Hyun Jae Kim, Kyoung Chan Kim, Jung Il Lee, Il Ki Han

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The thermal characteristics of laser diodes (LDs) are analyzed by using a finite element method. A change in the junction temperature depending on the thickness of the additional Au layer, which might be deposited or plated on the p-contact metal of the LD, has been observed. As the Au layer thickness increases, the junction temperature of the LDs, which are epi-up mounted on a Cu sub-mount, goes down drastically and then saturates. On the other hand, the junction temperature of LDs epi-down mounted on a Cu sub-mount shows relatively little variation with the Au thickness, although it is lowered by more than 30 °C at an electrical input power of 1.2 W compared to that of epi-up mounted LDs. We measure the junction temperatures of InAs quantum dot (QD) LDs and compare them with simulation results. The junction temperatures increased at a rate of 86 °C/W and 48 °C/W for epi-up and epi-down mounting with an additional Au layer of 0.2 μm, respectively.

Original languageEnglish
Pages (from-to)1936-1941
Number of pages6
JournalJournal of the Korean Physical Society
Volume50
Issue number6
DOIs
Publication statusPublished - 2007 Jan 1

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thermal analysis
semiconductor lasers
quantum dots
metals
temperature
mounting
finite element method
simulation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Jung, Jung Hwa ; Kim, Hyun Jae ; Kim, Kyoung Chan ; Lee, Jung Il ; Han, Il Ki. / Thermal analysis of InAs quantum dot laser diodes with an additional au layer on p-metal. In: Journal of the Korean Physical Society. 2007 ; Vol. 50, No. 6. pp. 1936-1941.
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abstract = "The thermal characteristics of laser diodes (LDs) are analyzed by using a finite element method. A change in the junction temperature depending on the thickness of the additional Au layer, which might be deposited or plated on the p-contact metal of the LD, has been observed. As the Au layer thickness increases, the junction temperature of the LDs, which are epi-up mounted on a Cu sub-mount, goes down drastically and then saturates. On the other hand, the junction temperature of LDs epi-down mounted on a Cu sub-mount shows relatively little variation with the Au thickness, although it is lowered by more than 30 °C at an electrical input power of 1.2 W compared to that of epi-up mounted LDs. We measure the junction temperatures of InAs quantum dot (QD) LDs and compare them with simulation results. The junction temperatures increased at a rate of 86 °C/W and 48 °C/W for epi-up and epi-down mounting with an additional Au layer of 0.2 μm, respectively.",
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Thermal analysis of InAs quantum dot laser diodes with an additional au layer on p-metal. / Jung, Jung Hwa; Kim, Hyun Jae; Kim, Kyoung Chan; Lee, Jung Il; Han, Il Ki.

In: Journal of the Korean Physical Society, Vol. 50, No. 6, 01.01.2007, p. 1936-1941.

Research output: Contribution to journalArticle

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