Abstract
The thermal characteristics of laser diodes (LDs) are analyzed by using a finite element method. A change in the junction temperature depending on the thickness of the additional Au layer, which might be deposited or plated on the p-contact metal of the LD, has been observed. As the Au layer thickness increases, the junction temperature of the LDs, which are epi-up mounted on a Cu sub-mount, goes down drastically and then saturates. On the other hand, the junction temperature of LDs epi-down mounted on a Cu sub-mount shows relatively little variation with the Au thickness, although it is lowered by more than 30 °C at an electrical input power of 1.2 W compared to that of epi-up mounted LDs. We measure the junction temperatures of InAs quantum dot (QD) LDs and compare them with simulation results. The junction temperatures increased at a rate of 86 °C/W and 48 °C/W for epi-up and epi-down mounting with an additional Au layer of 0.2 μm, respectively.
| Original language | English |
|---|---|
| Pages (from-to) | 1936-1941 |
| Number of pages | 6 |
| Journal | Journal of the Korean Physical Society |
| Volume | 50 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2007 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
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Thermal analysis of InAs quantum dot laser diodes with an additional au layer on p-metal. / Jung, Jung Hwa; Kim, Hyun Jae; Kim, Kyoung Chan; Lee, Jung Il; Han, Il Ki.
In: Journal of the Korean Physical Society, Vol. 50, No. 6, 01.01.2007, p. 1936-1941.Research output: Contribution to journal › Article
TY - JOUR
T1 - Thermal analysis of InAs quantum dot laser diodes with an additional au layer on p-metal
AU - Jung, Jung Hwa
AU - Kim, Hyun Jae
AU - Kim, Kyoung Chan
AU - Lee, Jung Il
AU - Han, Il Ki
PY - 2007/1/1
Y1 - 2007/1/1
N2 - The thermal characteristics of laser diodes (LDs) are analyzed by using a finite element method. A change in the junction temperature depending on the thickness of the additional Au layer, which might be deposited or plated on the p-contact metal of the LD, has been observed. As the Au layer thickness increases, the junction temperature of the LDs, which are epi-up mounted on a Cu sub-mount, goes down drastically and then saturates. On the other hand, the junction temperature of LDs epi-down mounted on a Cu sub-mount shows relatively little variation with the Au thickness, although it is lowered by more than 30 °C at an electrical input power of 1.2 W compared to that of epi-up mounted LDs. We measure the junction temperatures of InAs quantum dot (QD) LDs and compare them with simulation results. The junction temperatures increased at a rate of 86 °C/W and 48 °C/W for epi-up and epi-down mounting with an additional Au layer of 0.2 μm, respectively.
AB - The thermal characteristics of laser diodes (LDs) are analyzed by using a finite element method. A change in the junction temperature depending on the thickness of the additional Au layer, which might be deposited or plated on the p-contact metal of the LD, has been observed. As the Au layer thickness increases, the junction temperature of the LDs, which are epi-up mounted on a Cu sub-mount, goes down drastically and then saturates. On the other hand, the junction temperature of LDs epi-down mounted on a Cu sub-mount shows relatively little variation with the Au thickness, although it is lowered by more than 30 °C at an electrical input power of 1.2 W compared to that of epi-up mounted LDs. We measure the junction temperatures of InAs quantum dot (QD) LDs and compare them with simulation results. The junction temperatures increased at a rate of 86 °C/W and 48 °C/W for epi-up and epi-down mounting with an additional Au layer of 0.2 μm, respectively.
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U2 - 10.3938/jkps.50.1936
DO - 10.3938/jkps.50.1936
M3 - Article
AN - SCOPUS:34547317962
VL - 50
SP - 1936
EP - 1941
JO - Journal of the Korean Physical Society
JF - Journal of the Korean Physical Society
SN - 0374-4884
IS - 6
ER -