Thermal and electronic transport properties of CeTe2-xSn x compounds

Jong Soo Rhyee, Eunseog Cho, Kyu Hyoung Lee, Sang Il Kim, Eun Sung Lee, Sang Mock Lee, Yong Seung Kwon

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The thermal and electronic transport properties on rare-earth dichalcogenide compounds of CeTe2-x Snx (x0.1) were investigated by measuring electrical resistivity ρ, thermal conductivity κ, and Seebeck coefficient S. Compound of CeTe2 exhibited very low κ (1.25 W m-1 K-1) at 300 K, which was understood by the charge density wave lattice distortion. From the ρ (T) measurements, the metallic property of CeTe2 was significantly enhanced by Sn substitution. The temperature-dependent behavior of S (T) for CeTe2-x Snx (x=0.05 and 0.1) was well described by the inelastic Umklapp process and the phonon drag. The low Seebeck coefficient of CeTe2 (S≈2.5 μV/K at T≈300 K) was increased by Sn doping. From the band structure calculation, the semimetallic band character of CeTe2 was revealed with symmetric electron-hole band dispersion near the Fermi level. The symmetric electron-hole band dispersion of CeTe2 is responsible for the low Seebeck coefficient. The enhancement of the metallic property and Seebeck coefficient because of Sn substitution could be understood by the charge imbalance between electrons and holes caused by hole doping in the Te monolayer.

Original languageEnglish
Article number053712
JournalJournal of Applied Physics
Volume105
Issue number5
DOIs
Publication statusPublished - 2009 Mar 24

Fingerprint

Seebeck effect
transport properties
electronics
substitutes
Umklapp process
rare earth compounds
drag
thermal conductivity
electrical resistivity
augmentation
coefficients
electrons
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Rhyee, J. S., Cho, E., Lee, K. H., Kim, S. I., Lee, E. S., Lee, S. M., & Kwon, Y. S. (2009). Thermal and electronic transport properties of CeTe2-xSn x compounds. Journal of Applied Physics, 105(5), [053712]. https://doi.org/10.1063/1.3080143
Rhyee, Jong Soo ; Cho, Eunseog ; Lee, Kyu Hyoung ; Kim, Sang Il ; Lee, Eun Sung ; Lee, Sang Mock ; Kwon, Yong Seung. / Thermal and electronic transport properties of CeTe2-xSn x compounds. In: Journal of Applied Physics. 2009 ; Vol. 105, No. 5.
@article{ebad80de9bf247d685a956190783e350,
title = "Thermal and electronic transport properties of CeTe2-xSn x compounds",
abstract = "The thermal and electronic transport properties on rare-earth dichalcogenide compounds of CeTe2-x Snx (x0.1) were investigated by measuring electrical resistivity ρ, thermal conductivity κ, and Seebeck coefficient S. Compound of CeTe2 exhibited very low κ (1.25 W m-1 K-1) at 300 K, which was understood by the charge density wave lattice distortion. From the ρ (T) measurements, the metallic property of CeTe2 was significantly enhanced by Sn substitution. The temperature-dependent behavior of S (T) for CeTe2-x Snx (x=0.05 and 0.1) was well described by the inelastic Umklapp process and the phonon drag. The low Seebeck coefficient of CeTe2 (S≈2.5 μV/K at T≈300 K) was increased by Sn doping. From the band structure calculation, the semimetallic band character of CeTe2 was revealed with symmetric electron-hole band dispersion near the Fermi level. The symmetric electron-hole band dispersion of CeTe2 is responsible for the low Seebeck coefficient. The enhancement of the metallic property and Seebeck coefficient because of Sn substitution could be understood by the charge imbalance between electrons and holes caused by hole doping in the Te monolayer.",
author = "Rhyee, {Jong Soo} and Eunseog Cho and Lee, {Kyu Hyoung} and Kim, {Sang Il} and Lee, {Eun Sung} and Lee, {Sang Mock} and Kwon, {Yong Seung}",
year = "2009",
month = "3",
day = "24",
doi = "10.1063/1.3080143",
language = "English",
volume = "105",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "5",

}

Rhyee, JS, Cho, E, Lee, KH, Kim, SI, Lee, ES, Lee, SM & Kwon, YS 2009, 'Thermal and electronic transport properties of CeTe2-xSn x compounds', Journal of Applied Physics, vol. 105, no. 5, 053712. https://doi.org/10.1063/1.3080143

Thermal and electronic transport properties of CeTe2-xSn x compounds. / Rhyee, Jong Soo; Cho, Eunseog; Lee, Kyu Hyoung; Kim, Sang Il; Lee, Eun Sung; Lee, Sang Mock; Kwon, Yong Seung.

In: Journal of Applied Physics, Vol. 105, No. 5, 053712, 24.03.2009.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Thermal and electronic transport properties of CeTe2-xSn x compounds

AU - Rhyee, Jong Soo

AU - Cho, Eunseog

AU - Lee, Kyu Hyoung

AU - Kim, Sang Il

AU - Lee, Eun Sung

AU - Lee, Sang Mock

AU - Kwon, Yong Seung

PY - 2009/3/24

Y1 - 2009/3/24

N2 - The thermal and electronic transport properties on rare-earth dichalcogenide compounds of CeTe2-x Snx (x0.1) were investigated by measuring electrical resistivity ρ, thermal conductivity κ, and Seebeck coefficient S. Compound of CeTe2 exhibited very low κ (1.25 W m-1 K-1) at 300 K, which was understood by the charge density wave lattice distortion. From the ρ (T) measurements, the metallic property of CeTe2 was significantly enhanced by Sn substitution. The temperature-dependent behavior of S (T) for CeTe2-x Snx (x=0.05 and 0.1) was well described by the inelastic Umklapp process and the phonon drag. The low Seebeck coefficient of CeTe2 (S≈2.5 μV/K at T≈300 K) was increased by Sn doping. From the band structure calculation, the semimetallic band character of CeTe2 was revealed with symmetric electron-hole band dispersion near the Fermi level. The symmetric electron-hole band dispersion of CeTe2 is responsible for the low Seebeck coefficient. The enhancement of the metallic property and Seebeck coefficient because of Sn substitution could be understood by the charge imbalance between electrons and holes caused by hole doping in the Te monolayer.

AB - The thermal and electronic transport properties on rare-earth dichalcogenide compounds of CeTe2-x Snx (x0.1) were investigated by measuring electrical resistivity ρ, thermal conductivity κ, and Seebeck coefficient S. Compound of CeTe2 exhibited very low κ (1.25 W m-1 K-1) at 300 K, which was understood by the charge density wave lattice distortion. From the ρ (T) measurements, the metallic property of CeTe2 was significantly enhanced by Sn substitution. The temperature-dependent behavior of S (T) for CeTe2-x Snx (x=0.05 and 0.1) was well described by the inelastic Umklapp process and the phonon drag. The low Seebeck coefficient of CeTe2 (S≈2.5 μV/K at T≈300 K) was increased by Sn doping. From the band structure calculation, the semimetallic band character of CeTe2 was revealed with symmetric electron-hole band dispersion near the Fermi level. The symmetric electron-hole band dispersion of CeTe2 is responsible for the low Seebeck coefficient. The enhancement of the metallic property and Seebeck coefficient because of Sn substitution could be understood by the charge imbalance between electrons and holes caused by hole doping in the Te monolayer.

UR - http://www.scopus.com/inward/record.url?scp=62549127340&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=62549127340&partnerID=8YFLogxK

U2 - 10.1063/1.3080143

DO - 10.1063/1.3080143

M3 - Article

AN - SCOPUS:62549127340

VL - 105

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 5

M1 - 053712

ER -