Thermal and mechanical analysis of delamination in GaN-based light-emitting diode packages

Jianzheng Hu; Lianqiao Yang; Woong Joon Hwang; Moo Whan Shin

doi:10.1016/j.jcrysgro.2005.12.049

Thermal and mechanical analysis of delamination in GaN-based light-emitting diode packages

Jianzheng Hu, Lianqiao Yang, Woong Joon Hwang, Moo Whan Shin

School of Integrated Technology

Research output: Contribution to journal › Conference article › peer-review

81 Citations (Scopus)

Abstract

In this paper we present the analysis of delamination in light-emitting diode (LED) packages by transient thermal measurement and thermo-mechanical simulation. The LED samples were subjected to various moisture preconditioning treatments, and subsequently heat block testing. Transient thermal measurements were used to investigate the thermal behavior of the delaminated LEDs. Thermal resistance from chip to lead frame was increased from 41.7 to 70.9 K/W by a preprocessing for 24 h. Blocking of thermal path induced by delamination was regarded as being responsible for the increased thermal resistance. The maximum thermal stress for the die attach obtained from FEA simulation is 91.5 Mpa, and the thermal stress distribution is consistent with the observed micrograph for the delamination in the lead frame. Thermal stress induced in the reflow process caused delamination and moisture absorption expanded the delamination in the LED package investigated.

Original language	English
Pages (from-to)	157-161
Number of pages	5
Journal	Journal of Crystal Growth
Volume	288
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2005.12.049
Publication status	Published - 2006 Feb 2
Event	International Conference on Materials for Advanced Technologies - Duration: 2005 Jul 4 → 2005 Jul 8

Bibliographical note

Funding Information:
This work was supported by Grant no. R01-2002-000-00356-0 from the Basic Research Program of the Korea Science & Engineering Foundation. Support from the Korea Institute of Industry Technology Evaluation & Planning is also appreciated.

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2005.12.049

Cite this

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title = "Thermal and mechanical analysis of delamination in GaN-based light-emitting diode packages",

abstract = "In this paper we present the analysis of delamination in light-emitting diode (LED) packages by transient thermal measurement and thermo-mechanical simulation. The LED samples were subjected to various moisture preconditioning treatments, and subsequently heat block testing. Transient thermal measurements were used to investigate the thermal behavior of the delaminated LEDs. Thermal resistance from chip to lead frame was increased from 41.7 to 70.9 K/W by a preprocessing for 24 h. Blocking of thermal path induced by delamination was regarded as being responsible for the increased thermal resistance. The maximum thermal stress for the die attach obtained from FEA simulation is 91.5 Mpa, and the thermal stress distribution is consistent with the observed micrograph for the delamination in the lead frame. Thermal stress induced in the reflow process caused delamination and moisture absorption expanded the delamination in the LED package investigated.",

author = "Jianzheng Hu and Lianqiao Yang and Hwang, {Woong Joon} and Shin, {Moo Whan}",

note = "Funding Information: This work was supported by Grant no. R01-2002-000-00356-0 from the Basic Research Program of the Korea Science & Engineering Foundation. Support from the Korea Institute of Industry Technology Evaluation & Planning is also appreciated. ; International Conference on Materials for Advanced Technologies ; Conference date: 04-07-2005 Through 08-07-2005",

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T1 - Thermal and mechanical analysis of delamination in GaN-based light-emitting diode packages

AU - Hu, Jianzheng

AU - Yang, Lianqiao

AU - Hwang, Woong Joon

AU - Shin, Moo Whan

N1 - Funding Information: This work was supported by Grant no. R01-2002-000-00356-0 from the Basic Research Program of the Korea Science & Engineering Foundation. Support from the Korea Institute of Industry Technology Evaluation & Planning is also appreciated.

PY - 2006/2/2

Y1 - 2006/2/2

N2 - In this paper we present the analysis of delamination in light-emitting diode (LED) packages by transient thermal measurement and thermo-mechanical simulation. The LED samples were subjected to various moisture preconditioning treatments, and subsequently heat block testing. Transient thermal measurements were used to investigate the thermal behavior of the delaminated LEDs. Thermal resistance from chip to lead frame was increased from 41.7 to 70.9 K/W by a preprocessing for 24 h. Blocking of thermal path induced by delamination was regarded as being responsible for the increased thermal resistance. The maximum thermal stress for the die attach obtained from FEA simulation is 91.5 Mpa, and the thermal stress distribution is consistent with the observed micrograph for the delamination in the lead frame. Thermal stress induced in the reflow process caused delamination and moisture absorption expanded the delamination in the LED package investigated.

AB - In this paper we present the analysis of delamination in light-emitting diode (LED) packages by transient thermal measurement and thermo-mechanical simulation. The LED samples were subjected to various moisture preconditioning treatments, and subsequently heat block testing. Transient thermal measurements were used to investigate the thermal behavior of the delaminated LEDs. Thermal resistance from chip to lead frame was increased from 41.7 to 70.9 K/W by a preprocessing for 24 h. Blocking of thermal path induced by delamination was regarded as being responsible for the increased thermal resistance. The maximum thermal stress for the die attach obtained from FEA simulation is 91.5 Mpa, and the thermal stress distribution is consistent with the observed micrograph for the delamination in the lead frame. Thermal stress induced in the reflow process caused delamination and moisture absorption expanded the delamination in the LED package investigated.

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JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

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T2 - International Conference on Materials for Advanced Technologies

Y2 - 4 July 2005 through 8 July 2005

ER -

Thermal and mechanical analysis of delamination in GaN-based light-emitting diode packages

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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