Thermal and mechanical analysis of delamination in GaN-based light-emitting diode packages

Jianzheng Hu, Lianqiao Yang, Woong Joon Hwang, Moo Whan Shin

Research output: Contribution to journalConference article

79 Citations (Scopus)

Abstract

In this paper we present the analysis of delamination in light-emitting diode (LED) packages by transient thermal measurement and thermo-mechanical simulation. The LED samples were subjected to various moisture preconditioning treatments, and subsequently heat block testing. Transient thermal measurements were used to investigate the thermal behavior of the delaminated LEDs. Thermal resistance from chip to lead frame was increased from 41.7 to 70.9 K/W by a preprocessing for 24 h. Blocking of thermal path induced by delamination was regarded as being responsible for the increased thermal resistance. The maximum thermal stress for the die attach obtained from FEA simulation is 91.5 Mpa, and the thermal stress distribution is consistent with the observed micrograph for the delamination in the lead frame. Thermal stress induced in the reflow process caused delamination and moisture absorption expanded the delamination in the LED package investigated.

Original languageEnglish
Pages (from-to)157-161
Number of pages5
JournalJournal of Crystal Growth
Volume288
Issue number1
DOIs
Publication statusPublished - 2006 Feb 2
EventInternational Conference on Materials for Advanced Technologies -
Duration: 2005 Jul 42005 Jul 8

Fingerprint

Delamination
Light emitting diodes
thermal analysis
light emitting diodes
thermal stresses
Thermal stress
thermal resistance
moisture
Heat resistance
Moisture
preconditioning
preprocessing
stress distribution
simulation
chips
Stress concentration
heat
Lead
Hot Temperature
Finite element method

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Hu, Jianzheng ; Yang, Lianqiao ; Hwang, Woong Joon ; Shin, Moo Whan. / Thermal and mechanical analysis of delamination in GaN-based light-emitting diode packages. In: Journal of Crystal Growth. 2006 ; Vol. 288, No. 1. pp. 157-161.
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abstract = "In this paper we present the analysis of delamination in light-emitting diode (LED) packages by transient thermal measurement and thermo-mechanical simulation. The LED samples were subjected to various moisture preconditioning treatments, and subsequently heat block testing. Transient thermal measurements were used to investigate the thermal behavior of the delaminated LEDs. Thermal resistance from chip to lead frame was increased from 41.7 to 70.9 K/W by a preprocessing for 24 h. Blocking of thermal path induced by delamination was regarded as being responsible for the increased thermal resistance. The maximum thermal stress for the die attach obtained from FEA simulation is 91.5 Mpa, and the thermal stress distribution is consistent with the observed micrograph for the delamination in the lead frame. Thermal stress induced in the reflow process caused delamination and moisture absorption expanded the delamination in the LED package investigated.",
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Thermal and mechanical analysis of delamination in GaN-based light-emitting diode packages. / Hu, Jianzheng; Yang, Lianqiao; Hwang, Woong Joon; Shin, Moo Whan.

In: Journal of Crystal Growth, Vol. 288, No. 1, 02.02.2006, p. 157-161.

Research output: Contribution to journalConference article

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T1 - Thermal and mechanical analysis of delamination in GaN-based light-emitting diode packages

AU - Hu, Jianzheng

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AU - Hwang, Woong Joon

AU - Shin, Moo Whan

PY - 2006/2/2

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N2 - In this paper we present the analysis of delamination in light-emitting diode (LED) packages by transient thermal measurement and thermo-mechanical simulation. The LED samples were subjected to various moisture preconditioning treatments, and subsequently heat block testing. Transient thermal measurements were used to investigate the thermal behavior of the delaminated LEDs. Thermal resistance from chip to lead frame was increased from 41.7 to 70.9 K/W by a preprocessing for 24 h. Blocking of thermal path induced by delamination was regarded as being responsible for the increased thermal resistance. The maximum thermal stress for the die attach obtained from FEA simulation is 91.5 Mpa, and the thermal stress distribution is consistent with the observed micrograph for the delamination in the lead frame. Thermal stress induced in the reflow process caused delamination and moisture absorption expanded the delamination in the LED package investigated.

AB - In this paper we present the analysis of delamination in light-emitting diode (LED) packages by transient thermal measurement and thermo-mechanical simulation. The LED samples were subjected to various moisture preconditioning treatments, and subsequently heat block testing. Transient thermal measurements were used to investigate the thermal behavior of the delaminated LEDs. Thermal resistance from chip to lead frame was increased from 41.7 to 70.9 K/W by a preprocessing for 24 h. Blocking of thermal path induced by delamination was regarded as being responsible for the increased thermal resistance. The maximum thermal stress for the die attach obtained from FEA simulation is 91.5 Mpa, and the thermal stress distribution is consistent with the observed micrograph for the delamination in the lead frame. Thermal stress induced in the reflow process caused delamination and moisture absorption expanded the delamination in the LED package investigated.

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