Abstract
In this paper we present the analysis of delamination in light-emitting diode (LED) packages by transient thermal measurement and thermo-mechanical simulation. The LED samples were subjected to various moisture preconditioning treatments, and subsequently heat block testing. Transient thermal measurements were used to investigate the thermal behavior of the delaminated LEDs. Thermal resistance from chip to lead frame was increased from 41.7 to 70.9 K/W by a preprocessing for 24 h. Blocking of thermal path induced by delamination was regarded as being responsible for the increased thermal resistance. The maximum thermal stress for the die attach obtained from FEA simulation is 91.5 Mpa, and the thermal stress distribution is consistent with the observed micrograph for the delamination in the lead frame. Thermal stress induced in the reflow process caused delamination and moisture absorption expanded the delamination in the LED package investigated.
| Original language | English |
|---|---|
| Pages (from-to) | 157-161 |
| Number of pages | 5 |
| Journal | Journal of Crystal Growth |
| Volume | 288 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2006 Feb 2 |
| Event | International Conference on Materials for Advanced Technologies - Duration: 2005 Jul 4 → 2005 Jul 8 |
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
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Thermal and mechanical analysis of delamination in GaN-based light-emitting diode packages. / Hu, Jianzheng; Yang, Lianqiao; Hwang, Woong Joon; Shin, Moo Whan.
In: Journal of Crystal Growth, Vol. 288, No. 1, 02.02.2006, p. 157-161.Research output: Contribution to journal › Conference article
TY - JOUR
T1 - Thermal and mechanical analysis of delamination in GaN-based light-emitting diode packages
AU - Hu, Jianzheng
AU - Yang, Lianqiao
AU - Hwang, Woong Joon
AU - Shin, Moo Whan
PY - 2006/2/2
Y1 - 2006/2/2
N2 - In this paper we present the analysis of delamination in light-emitting diode (LED) packages by transient thermal measurement and thermo-mechanical simulation. The LED samples were subjected to various moisture preconditioning treatments, and subsequently heat block testing. Transient thermal measurements were used to investigate the thermal behavior of the delaminated LEDs. Thermal resistance from chip to lead frame was increased from 41.7 to 70.9 K/W by a preprocessing for 24 h. Blocking of thermal path induced by delamination was regarded as being responsible for the increased thermal resistance. The maximum thermal stress for the die attach obtained from FEA simulation is 91.5 Mpa, and the thermal stress distribution is consistent with the observed micrograph for the delamination in the lead frame. Thermal stress induced in the reflow process caused delamination and moisture absorption expanded the delamination in the LED package investigated.
AB - In this paper we present the analysis of delamination in light-emitting diode (LED) packages by transient thermal measurement and thermo-mechanical simulation. The LED samples were subjected to various moisture preconditioning treatments, and subsequently heat block testing. Transient thermal measurements were used to investigate the thermal behavior of the delaminated LEDs. Thermal resistance from chip to lead frame was increased from 41.7 to 70.9 K/W by a preprocessing for 24 h. Blocking of thermal path induced by delamination was regarded as being responsible for the increased thermal resistance. The maximum thermal stress for the die attach obtained from FEA simulation is 91.5 Mpa, and the thermal stress distribution is consistent with the observed micrograph for the delamination in the lead frame. Thermal stress induced in the reflow process caused delamination and moisture absorption expanded the delamination in the LED package investigated.
UR - http://www.scopus.com/inward/record.url?scp=31644441849&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=31644441849&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2005.12.049
DO - 10.1016/j.jcrysgro.2005.12.049
M3 - Conference article
AN - SCOPUS:31644441849
VL - 288
SP - 157
EP - 161
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1
ER -