Thermal and plasma-enhanced ALD of Ta and Ti oxide thin films from alkylamide precursors

W. J. Maeng, H. Kim

Research output: Contribution to journalArticle

79 Citations (Scopus)

Abstract

We investigated the thermal and plasma-enhanced atomic layer deposition (PE-ALD) of tantalum and titanium oxides from representative alkylamide precursors, Ta (N Me2) 5 (pentakis(dimethylamino)Ta, PDMAT) and Ti (N Me2) 4 [tetrakis(dimethylamido)Ti, TDMAT]. ALD of Ta2 O5 by PDMAT with water or oxygen plasma produced pure Ta2 O5 films with good self-saturation growth characteristics. However, incomplete self-saturation was observed for Ti O2 ALD from TDMAT. The film properties including microstructure, chemical composition, and electrical properties are discussed focusing on the comparative studies between thermal and PE-ALD processes for both oxides. The results indicate that the PDMAT is a promising precursor for both thermal and PE-ALD of Ta2 O5.

Original languageEnglish
Pages (from-to)G191-G194
JournalElectrochemical and Solid-State Letters
Volume9
Issue number6
DOIs
Publication statusPublished - 2006 Jun

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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