Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode

Sang Joon Park; Woo Hee Kim; Han Bo Ram Lee; W. J. Maeng; H. Kim

doi:10.1016/j.mee.2007.01.239

Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode

Sang Joon Park, Woo Hee Kim, Han Bo Ram Lee, W. J. Maeng, H. Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

82 Citations (Scopus)

Abstract

Ruthenium thin films were grown by thermal and plasma-enhanced atomic layer deposition (PE-ALD) using O₂ and ammonia (NH₃) plasma, respectively. RuCp₂ and Ru(EtCp)₂ were used as Ru precursors. Pure and low resistivity (<20 μΩ cm) Ru films were grown by PE-ALD as well as thermal ALD. PE-ALD Ru showed no nucleation delay on various substrates including TaN_x, Si, and SiO₂, in contrast to thermal ALD Ru. And the root-mean-square (RMS) roughness of PE-ALD Ru was lower than that of thermal ALD Ru. Additionally, metal-oxide-semiconductor (MOS) capacitor composed of p-Si/ALD Ta₂O₅/ALD Ru (35 nm) was fabricated and C-V measurements were performed for as-deposited sample. Very small hysteresis of 20 mV was obtained, and effective work function difference to Si substrate was minimal as -0.03 V. For comparison, MOS capacitor was fabricated using sputtered Ru and large hysteresis of 0.5 V and flat band voltage (V_FB) shift to negative value were observed. This result indicates that ALD process produces more reliable, damage free Ru gate compared to sputtering process.

Original language	English
Pages (from-to)	39-44
Number of pages	6
Journal	Microelectronic Engineering
Volume	85
Issue number	1
DOIs	https://doi.org/10.1016/j.mee.2007.01.239
Publication status	Published - 2008 Jan

Bibliographical note

Funding Information:
The Synchrotron XRD experiments were carried out at the 5C2 beam line of Pohang Accelarator Laboratory (PAL). This work was supported by the System IC 2010 program of the Korean government, POSTECH research fund, Korea Electronics Technology Institute under contract 10023796, and Korean Research Foundation under contract KRF-2005-003-D00144.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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title = "Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode",

abstract = "Ruthenium thin films were grown by thermal and plasma-enhanced atomic layer deposition (PE-ALD) using O2 and ammonia (NH3) plasma, respectively. RuCp2 and Ru(EtCp)2 were used as Ru precursors. Pure and low resistivity (<20 μΩ cm) Ru films were grown by PE-ALD as well as thermal ALD. PE-ALD Ru showed no nucleation delay on various substrates including TaNx, Si, and SiO2, in contrast to thermal ALD Ru. And the root-mean-square (RMS) roughness of PE-ALD Ru was lower than that of thermal ALD Ru. Additionally, metal-oxide-semiconductor (MOS) capacitor composed of p-Si/ALD Ta2O5/ALD Ru (35 nm) was fabricated and C-V measurements were performed for as-deposited sample. Very small hysteresis of 20 mV was obtained, and effective work function difference to Si substrate was minimal as -0.03 V. For comparison, MOS capacitor was fabricated using sputtered Ru and large hysteresis of 0.5 V and flat band voltage (VFB) shift to negative value were observed. This result indicates that ALD process produces more reliable, damage free Ru gate compared to sputtering process.",

author = "Park, {Sang Joon} and Kim, {Woo Hee} and Lee, {Han Bo Ram} and Maeng, {W. J.} and H. Kim",

note = "Funding Information: The Synchrotron XRD experiments were carried out at the 5C2 beam line of Pohang Accelarator Laboratory (PAL). This work was supported by the System IC 2010 program of the Korean government, POSTECH research fund, Korea Electronics Technology Institute under contract 10023796, and Korean Research Foundation under contract KRF-2005-003-D00144.",

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AU - Kim, H.

N1 - Funding Information: The Synchrotron XRD experiments were carried out at the 5C2 beam line of Pohang Accelarator Laboratory (PAL). This work was supported by the System IC 2010 program of the Korean government, POSTECH research fund, Korea Electronics Technology Institute under contract 10023796, and Korean Research Foundation under contract KRF-2005-003-D00144.

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N2 - Ruthenium thin films were grown by thermal and plasma-enhanced atomic layer deposition (PE-ALD) using O2 and ammonia (NH3) plasma, respectively. RuCp2 and Ru(EtCp)2 were used as Ru precursors. Pure and low resistivity (<20 μΩ cm) Ru films were grown by PE-ALD as well as thermal ALD. PE-ALD Ru showed no nucleation delay on various substrates including TaNx, Si, and SiO2, in contrast to thermal ALD Ru. And the root-mean-square (RMS) roughness of PE-ALD Ru was lower than that of thermal ALD Ru. Additionally, metal-oxide-semiconductor (MOS) capacitor composed of p-Si/ALD Ta2O5/ALD Ru (35 nm) was fabricated and C-V measurements were performed for as-deposited sample. Very small hysteresis of 20 mV was obtained, and effective work function difference to Si substrate was minimal as -0.03 V. For comparison, MOS capacitor was fabricated using sputtered Ru and large hysteresis of 0.5 V and flat band voltage (VFB) shift to negative value were observed. This result indicates that ALD process produces more reliable, damage free Ru gate compared to sputtering process.

AB - Ruthenium thin films were grown by thermal and plasma-enhanced atomic layer deposition (PE-ALD) using O2 and ammonia (NH3) plasma, respectively. RuCp2 and Ru(EtCp)2 were used as Ru precursors. Pure and low resistivity (<20 μΩ cm) Ru films were grown by PE-ALD as well as thermal ALD. PE-ALD Ru showed no nucleation delay on various substrates including TaNx, Si, and SiO2, in contrast to thermal ALD Ru. And the root-mean-square (RMS) roughness of PE-ALD Ru was lower than that of thermal ALD Ru. Additionally, metal-oxide-semiconductor (MOS) capacitor composed of p-Si/ALD Ta2O5/ALD Ru (35 nm) was fabricated and C-V measurements were performed for as-deposited sample. Very small hysteresis of 20 mV was obtained, and effective work function difference to Si substrate was minimal as -0.03 V. For comparison, MOS capacitor was fabricated using sputtered Ru and large hysteresis of 0.5 V and flat band voltage (VFB) shift to negative value were observed. This result indicates that ALD process produces more reliable, damage free Ru gate compared to sputtering process.

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Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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